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BEHAVIOUR OF X-RAY DIFFRACTION FROM UNIFORMLY BENT Si CRYSTAL

YANG PING

BEHAVIOUR OF X-RAY DIFFRACTION FROM UNIFORMLY BENT Si CRYSTAL

YANG PING
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  • Received Date:  26 March 1991
  • Published Online:  05 January 1992

BEHAVIOUR OF X-RAY DIFFRACTION FROM UNIFORMLY BENT Si CRYSTAL

  • 1. 南京大学固体微结构物理国家实验室,南京,210008

Abstract: X-ray diffraction from uniformly bent Si crystal has been studied. The experimental integrated diffraction intensity rises monotonically with the strain in the crystal, this coincides with the theory. The visibility of Pendell?sung fringes becomes poorer as the strain goes up, this reflects the increse of intensity difference between the wave fields and variation of the trace of the wave fields in the crystal.

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