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ELECTRONIC SPECTROSCOPY STUDIES OF P2S5/NH4OH TREATED GaAs(100) SURFACE

ZHONG ZHAN-TIAN LUO WEN-ZHE MOU SHAN-MING ZHANG KAI-YAN LI XIA LI CHENG-FANG

ELECTRONIC SPECTROSCOPY STUDIES OF P2S5/NH4OH TREATED GaAs(100) SURFACE

ZHONG ZHAN-TIAN, LUO WEN-ZHE, MOU SHAN-MING, ZHANG KAI-YAN, LI XIA, LI CHENG-FANG
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  • Received Date:  17 April 1991
  • Published Online:  05 February 1992

ELECTRONIC SPECTROSCOPY STUDIES OF P2S5/NH4OH TREATED GaAs(100) SURFACE

  • 1. 中国科学院半导体研究所,北京,100083;中国科学院物理研究所表面物理国家重点实验室,北京,100080

Abstract: The microscopic characteristics of the GaAs(100) surface treated with P2S5/NH4OH solution has been investigated by Auger electron spectroscopy (AES) and X-ray photoemission spectroscopy(XPS). AES reveals that only phosphorus and sulfur, but no oxygen, are contain-ed in the interface between passivation film and GaAs substrate. Using XPS, it is found that both Ga2O3 and As2O3 on the GaAs surface are removed by the P2S5/NH4OH treatment, moro-ver, gallium sulfide and arsenic sulfide are formed. The passivation film results in a reduction of surfacer state density and improving both electronic and optical properties of GaAs surface.

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