Search

Article

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

Study on high mobility In0.6Ga0.4As channel MOSHEMT and MOSFET

Chang Hu-Dong Sun Bing Lu Li Zhao Wei Wang Sheng-Kai Wang Wen-Xin Liu Hong-Gang

Study on high mobility In0.6Ga0.4As channel MOSHEMT and MOSFET

Chang Hu-Dong, Sun Bing, Lu Li, Zhao Wei, Wang Sheng-Kai, Wang Wen-Xin, Liu Hong-Gang
PDF
Get Citation
Metrics
  • Abstract views:  1430
  • PDF Downloads:  718
  • Cited By: 0
Publishing process
  • Received Date:  08 March 2012
  • Accepted Date:  11 May 2012
  • Published Online:  05 November 2012

Study on high mobility In0.6Ga0.4As channel MOSHEMT and MOSFET

  • 1. Microwave Device and IC Department, Institute of Microelectronics, Chines Academy of Sciences, Beijing 100029, China;
  • 2. Institute of Physics, Chines Academy of Science, Beijing 100190, China
Fund Project:  Project supported by the National Basic Research Program of China (Grant Nos. 2011CBA00605, 2010CB327501) and the National Science and Technology Major Project of the Ministry of Science and Technology of China (Grant No. 2011ZX02708-003).

Abstract: High-mobility In0.6Ga0.4As channel metal oxide semiconductor high electron mobility transistor (MOSHEMT) and metal oxide semiconductor field effect transistor (MOSFET) are investigated based on simulation and experiment in this paper. It is found that InAlAs barrier layer has a great influence on the characteristics of In0.6Ga0.4As MOSHEMT. In0.6Ga0.4As MOSHEMT exhibits excellent electrical characteristics compared with In0.6Ga0.4As MOSFET. The experimental results show that the effective channel mobility of MOSHEMT is 2812 cm2/V·s-1, which is 3.2 times that of MOSFET. A 0.02 mm gate length MOSHEMT shows higher drive current, peak transconductance, Ion/Ioff ratio and gate breakdown voltage and lower sub-threshold swing than the MOSFET with the same gate length.

Reference (12)

Catalog

    /

    返回文章
    返回