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Temperature-dependant growth and properties of W-doped ZnO thin films deposited by reactive magnetron sputtering

Zhang Chi Chen Xin-Liang Wang Fei Yan Cong-Bo Huang Qian Zhao Ying Zhang Xiao-Dan Geng Xin-Hua

Temperature-dependant growth and properties of W-doped ZnO thin films deposited by reactive magnetron sputtering

Zhang Chi, Chen Xin-Liang, Wang Fei, Yan Cong-Bo, Huang Qian, Zhao Ying, Zhang Xiao-Dan, Geng Xin-Hua
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  • Received Date:  24 May 2012
  • Accepted Date:  03 July 2012
  • Published Online:  05 December 2012

Temperature-dependant growth and properties of W-doped ZnO thin films deposited by reactive magnetron sputtering

  • 1. Institute of Photo-Electronic Thin Film Devices and Technology, Tianjin Key Laboratory of Photo-Electronic Thin Film Devices and Technology, Tianjin Key Laboratory of Opto-Electronic Information Science and Technology for Ministry of Education, Nankai University, Tianjin 300071, China
Fund Project:  Project supported by the National Basic Research Program of China (Grant Nos. 2011CBA00705, 2011CBA00706, 2011CBA00707), the National High Technology Research and Development Program of China (Grant No. 2009AA050602), International Cooperation Project between China-Greece Government (Grant No. 2009DFA62580), Tianjin Applied Basic Research Project and Cutting-edge Technology Research Plan, China (Grant No. 09JCYBJC06900), and the Fundamental Research Funds for the Central Universities, China (Grant No. 65010341).

Abstract: W-doped ZnO (WZO) thin films for thin film solar cells have been deposited by pulsed direct-current reactive magnetron sputtering. The microstructures, surface morphologies, optical and electrical properties of WZO thin films are investigated at different substrate temperatures. The experimental results indicate that a proper substrate temperature is the key factor for fabricating high-quality WZO thin films. The surface roughness of WZO thin films increases firstly from 15.65 nm to 37.60 nm, and then decreases from 37.60 nm to 11.07 nm with the increase of substrate temperature. Higher Hall mobility deposited at the higher temperatures is attributed to the compact structure and good crystallization quality. The WZO thin film prepared at the temperature of 325 ℃ presents excellent optical and electrical properties with an average transmittance of 85.7% in the wavelength range from 400 nm to 1500 nm, a low resistivity of 9.25× 10-3 Ω·cm, a sheet resistance of 56.24 Ω /sq and a high Hall mobility of 11.8 cm2·V-1·s-1.

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