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The preparation and characteristics research of high mobility amorphous indium gallium zinc oxide thin-film transistors

Li Shuai-Shuai Liang Chao-Xu Wang Xue-Xia Li Yan-Hui Song Shu-Mei Xin Yan-Qing Yang Tian-Lin

The preparation and characteristics research of high mobility amorphous indium gallium zinc oxide thin-film transistors

Li Shuai-Shuai, Liang Chao-Xu, Wang Xue-Xia, Li Yan-Hui, Song Shu-Mei, Xin Yan-Qing, Yang Tian-Lin
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  • Received Date:  01 November 2012
  • Accepted Date:  29 November 2012
  • Published Online:  05 April 2013

The preparation and characteristics research of high mobility amorphous indium gallium zinc oxide thin-film transistors

  • 1. Department of Space Science and Physics, Shandong University at Weihai, Weihai 264209, China
Fund Project:  Project supported by the Natural Science Foundation of Shandong Province, China (Grant No. ZR2009AM020), and the Independent Innovation Foundation of Shandong University, China (Grant Nos. 2011ZRXT002, 2011ZRYQ010).

Abstract: Indium gallium zinc oxide (IGZO) is widely used in thin-film transistors (TFT) as an active layer due to its high mobility and transmittance. The amorphous n-type indium gallium zinc oxide thin-film transistors (IGZO-TFT) of bottom gate with high mobility were prepared, the active layer, source and drain electrode of the TFT were prepared by using magnetron sputtering method, and a low cost mask was used to control the size of the channel. The diffraction pattern and transmittance spectrum were measured by using X-ray diffraction and ultraviolet-visible spectrophotometer, respectively. The structural and optical properties of the IGZO thin film were studied. The dependence of active layer thickness on the performance was analyzed by testing the output characteristics and transfer property of IGZO-TFT. The field effect mobility of the IGZO-TFT reaches 15.6 cm2·V-1·s-1, and the on/off ratio is higher than 107.

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