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Effect of thickness on the properties of Cu(Inx,Ga1-x)Se2 back conduct Mo thin films prepared by DC sputtering

Tian Jing Yang Xing Liu Shang-Jun Lian Xiao-Juan Chen Jin-Wei Wang Rui-Lin

Effect of thickness on the properties of Cu(Inx,Ga1-x)Se2 back conduct Mo thin films prepared by DC sputtering

Tian Jing, Yang Xing, Liu Shang-Jun, Lian Xiao-Juan, Chen Jin-Wei, Wang Rui-Lin
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  • In this study, Mo thin films which used in Cu(Inx Ga1-x)Se2 (CIGS) thin film solar cells as back conduct were deposited on soda-lime glass substrates via DC magnetron sputtering under certain conditions. A series of Mo thin films prepared of various thicknesses was obtained in different sputtering deposition times. The microstructure, electrical resistivity and mechanical strain property of Mo thin films, which may be varied by controlling the thickness, were investigated by XRD, SEM, four probes technology and Scotch tape test. As the results showed, the thicknesses of the films increased linearly with the sputtering time. With increasing thickness, the films' crystal growth showed a change from (110) preferred orientation to (211) preferred orientation. The sheet resistance sharply reduced to 2 Ω/⇑ with the increase of (110) peak height and the resistivity linearly decreased to 0.96×10-4 Ω·cm due to the level of (110) preferred orientation. The films surface has porous (fish-like) grain morphology and intergranular voids. All the films are in a tensile state, and the inner strain decreased with the increase of the thickness.
    • Funds: Project supported by the Doctoral Program of Higher Education, China (Grant No. 20110181110003), the Chengdu Natural Science Foundation, China (Grant Nos. 10GGYB380GX-023, 10GGYB828GX-023), the Collaborative Innovation Funding by China Academy of Engineering Physics and Sichuan University (Grant No. XTCX2011001), and the Sichuan Provincial Department of Science and Technology R&D Program (Grant No. 2013FZ0034).
    [1]

    Orgassa K, Schock H W, Werner J H 2003 Thin Solid Films 431 387

    [2]

    Wada T, Koharab N, Nishiwaki S, Negami T 2001 Thin Solid Films 387 118

    [3]

    Kohara N, Nishiwaki S, Hashimoto Y, Negami T, Wada T 2001 Sol. Energy Mater. Sol. Cells 67 209

    [4]

    Assmann L, Bernéde J C, Drici A, Amory C, Halgand E, Morsli M 2005 Appl. Surf. Sci. 246 159

    [5]

    Jackson P, Hariskos D, Lotter E, Paetel S, Wuerz R, Menner R, Wischmann W, Powalla M 2011 Prog. Photovolt: Res. Appl. 19 894

    [6]

    Repins I, Contreras M A, Egaas B, DeHart C, Scharf J, Perkins C L., To B, Noufi R 2008 Prog. Photovolt: Res. Appl. 16 235

    [7]

    Scofield J H, Duda A, Albin D, Ballardb B L, Predecki P K 1995 Thin Solid Films 260 26

    [8]

    Jubault M, Ribeaucourt L, Chassaing E, Renou G, Lincot D, Donsanti F 2011 Sol. Energy Mater. Sol. Cells 95 26

    [9]

    Li Z H, Cho E S, Kwon S J 2011 Appl. Surf. Sci. 257 9682

    [10]

    Wu H M, Liang S C, Lin Y L, Ni C Y, Bor H Y, Tsai D C, Shieu F S 2012 Vacuum 86 1916

    [11]

    Su C Y, Liao K H, Pan C T, Peng P W 2012 Thin. Solid Films 520 5936

    [12]

    Li W, Ao J P, He Q, Liu F F, Li F Y 2007 Acta Phys. Sin. 56 5009 (in Chinese) [李微, 敖建平, 何青, 刘芳芳, 李凤岩, 李长健, 孙云 2007 物理学报 56 2009]

    [13]

    Ji H, Zhao T X, Wang X P, Dong Y 1993 Acta Phys. Sin. 42 1340 (in Chinese) [季航, 赵特秀, 王晓平, 董诩 1993 物理学报 42 1340]

    [14]

    Salomé P M P, Malaquias J, Fernandes P A, Cunha A F da 2010 J. Phys. D: Appl. Phys. 43 345501

    [15]

    Zhang L, He Q, Jiang W L, Liu F F, Li C J, Sun Y 2008 Chin. Phys. Lett. 25 345

  • [1]

    Orgassa K, Schock H W, Werner J H 2003 Thin Solid Films 431 387

    [2]

    Wada T, Koharab N, Nishiwaki S, Negami T 2001 Thin Solid Films 387 118

    [3]

    Kohara N, Nishiwaki S, Hashimoto Y, Negami T, Wada T 2001 Sol. Energy Mater. Sol. Cells 67 209

    [4]

    Assmann L, Bernéde J C, Drici A, Amory C, Halgand E, Morsli M 2005 Appl. Surf. Sci. 246 159

    [5]

    Jackson P, Hariskos D, Lotter E, Paetel S, Wuerz R, Menner R, Wischmann W, Powalla M 2011 Prog. Photovolt: Res. Appl. 19 894

    [6]

    Repins I, Contreras M A, Egaas B, DeHart C, Scharf J, Perkins C L., To B, Noufi R 2008 Prog. Photovolt: Res. Appl. 16 235

    [7]

    Scofield J H, Duda A, Albin D, Ballardb B L, Predecki P K 1995 Thin Solid Films 260 26

    [8]

    Jubault M, Ribeaucourt L, Chassaing E, Renou G, Lincot D, Donsanti F 2011 Sol. Energy Mater. Sol. Cells 95 26

    [9]

    Li Z H, Cho E S, Kwon S J 2011 Appl. Surf. Sci. 257 9682

    [10]

    Wu H M, Liang S C, Lin Y L, Ni C Y, Bor H Y, Tsai D C, Shieu F S 2012 Vacuum 86 1916

    [11]

    Su C Y, Liao K H, Pan C T, Peng P W 2012 Thin. Solid Films 520 5936

    [12]

    Li W, Ao J P, He Q, Liu F F, Li F Y 2007 Acta Phys. Sin. 56 5009 (in Chinese) [李微, 敖建平, 何青, 刘芳芳, 李凤岩, 李长健, 孙云 2007 物理学报 56 2009]

    [13]

    Ji H, Zhao T X, Wang X P, Dong Y 1993 Acta Phys. Sin. 42 1340 (in Chinese) [季航, 赵特秀, 王晓平, 董诩 1993 物理学报 42 1340]

    [14]

    Salomé P M P, Malaquias J, Fernandes P A, Cunha A F da 2010 J. Phys. D: Appl. Phys. 43 345501

    [15]

    Zhang L, He Q, Jiang W L, Liu F F, Li C J, Sun Y 2008 Chin. Phys. Lett. 25 345

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Publishing process
  • Received Date:  27 December 2012
  • Accepted Date:  31 January 2013
  • Published Online:  05 June 2013

Effect of thickness on the properties of Cu(Inx,Ga1-x)Se2 back conduct Mo thin films prepared by DC sputtering

  • 1. College of materials science and engineering, Sichuan University, Chendu 610065, China
Fund Project:  Project supported by the Doctoral Program of Higher Education, China (Grant No. 20110181110003), the Chengdu Natural Science Foundation, China (Grant Nos. 10GGYB380GX-023, 10GGYB828GX-023), the Collaborative Innovation Funding by China Academy of Engineering Physics and Sichuan University (Grant No. XTCX2011001), and the Sichuan Provincial Department of Science and Technology R&D Program (Grant No. 2013FZ0034).

Abstract: In this study, Mo thin films which used in Cu(Inx Ga1-x)Se2 (CIGS) thin film solar cells as back conduct were deposited on soda-lime glass substrates via DC magnetron sputtering under certain conditions. A series of Mo thin films prepared of various thicknesses was obtained in different sputtering deposition times. The microstructure, electrical resistivity and mechanical strain property of Mo thin films, which may be varied by controlling the thickness, were investigated by XRD, SEM, four probes technology and Scotch tape test. As the results showed, the thicknesses of the films increased linearly with the sputtering time. With increasing thickness, the films' crystal growth showed a change from (110) preferred orientation to (211) preferred orientation. The sheet resistance sharply reduced to 2 Ω/⇑ with the increase of (110) peak height and the resistivity linearly decreased to 0.96×10-4 Ω·cm due to the level of (110) preferred orientation. The films surface has porous (fish-like) grain morphology and intergranular voids. All the films are in a tensile state, and the inner strain decreased with the increase of the thickness.

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