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Electroluminescence from Si nanostructure-based silicon nitride light-emitting devices

Lin Zhen-Xu Lin Ze-Wen Zhang Yi Song Chao Guo Yan-Qing Wang Xiang Huang Xin-Tang Huang Rui

Electroluminescence from Si nanostructure-based silicon nitride light-emitting devices

Lin Zhen-Xu, Lin Ze-Wen, Zhang Yi, Song Chao, Guo Yan-Qing, Wang Xiang, Huang Xin-Tang, Huang Rui
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Publishing process
  • Received Date:  13 October 2013
  • Accepted Date:  27 October 2013
  • Published Online:  05 February 2014

Electroluminescence from Si nanostructure-based silicon nitride light-emitting devices

  • 1. Institute of Nanoscience and Nanotechnology, Central China Normal University, Wuhan 430079, China;
  • 2. Department of Physics and Electrical Engineering, Hanshan Normal University, Chaozhou 521041, China
Fund Project:  Project supported by the National Natural Science Foundation of China (Grant Nos. 61274140, 61306003).

Abstract: Dense Si nanostructures embedded in silicon nitride prepared by plasma-enhanced chemical vapor deposition (PECVD) was used as luminescence active layer to fabricate light-emitting diodes based on p-Si/SiN-based emitter/AZO structure. Visible electroluminescence from the device was observed at room temperature. It is found that the electroluminescence intensity of the device can be further enhanced significantly by inserting an ultrathin nanocrystalline Si layer between the p-Si substrate and SiN-based emitter as a hole barrier layer. Moreover, the electroluminescence efficiency is increased by more than 80% as compared to the decice without the nc-Si barrier layer.

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