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Oxidation-induced stacking faults in nitrogen-doped czochralski silicon investigated by transmission electron microscope

Xu Jin Yang De-Ren Chu Jia Ma Xiang-Yang Que Duan-Lin

Oxidation-induced stacking faults in nitrogen-doped czochralski silicon investigated by transmission electron microscope

Xu Jin, Yang De-Ren, Chu Jia, Ma Xiang-Yang, Que Duan-Lin
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  • Received Date:  13 December 2002
  • Accepted Date:  11 April 2003
  • Published Online:  16 February 2004

Oxidation-induced stacking faults in nitrogen-doped czochralski silicon investigated by transmission electron microscope

  • 1. 浙江大学硅材料国家重点实验室,杭州 310027

Abstract: The extended-defects generated during oxidation in both of nitrogen-doped Czochralski (NCZ) silicon and common Czochralski (CZ) silicon have been investigated by Transmission Electron Microscopy(TEM). It is found that the size of the oxidation-induced stacking faults (OSFs) decreases with the increase of oxidation time in NCZ silicon, and punched-out dislocations could also be observed. While in CZ silicon, there are many polyhedral oxygen precipitates generated, and the size of OSFs increases with increasing oxidation time.

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