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Cu-W Thin film characterized by surface fractal and resistivity

Xu Ke-Wei Wang Yuan

Cu-W Thin film characterized by surface fractal and resistivity

Xu Ke-Wei, Wang Yuan
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  • Abstract views:  3321
  • PDF Downloads:  1362
  • Cited By: 0
Publishing process
  • Received Date:  21 March 2003
  • Accepted Date:  23 June 2003
  • Published Online:  15 March 2004

Cu-W Thin film characterized by surface fractal and resistivity

  • 1. (1)西安交通大学金属材料强度国家重点实验室,西安 710049; (2)西安交通大学金属材料强度国家重点实验室,西安 710049;兰州铁道学院机械与动力学院,兰州 730070

Abstract: Thin films of Cu-W were deposited on Si wafers by magnetron sputtering,and characterized by atomic force microscopy(AFM).Power spectra density was used to calculate the fractal dimension of the AFM images.The results show that the fractal dimension values increase with the film thickness and there is a relationship between the fractal dimension and the resistivity of the films.The change of resistivity is directly proportional to the fractal dimension.

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