[1] |
Li Wen-Hao, Xie Yu-Qing, Shi Hai-Zheng, Lu Peng-Fei, Ren Jing. Mechanisms of rare earth ion distribution in fluorosilicate glass containing KMnF3 nanocrystal. Acta Physica Sinica,
2022, 71(8): 084205.
doi: 10.7498/aps.71.20211953
|
[2] |
Liu Liang-You, Gao Song, Li Sha, Li Zhao-Tong, Xia Yi-Fan. Research progress of diffusion sensitive gradient field encoding schemes in magnetic resonance diffusion tensor imaging. Acta Physica Sinica,
2020, 69(3): 038702.
doi: 10.7498/aps.69.20191346
|
[3] |
Wu Xin-Yu, Han Wei-Hua, Yang Fu-Hua. Quantum transport relating to impurity quantum dots in silicon nanostructure transistor. Acta Physica Sinica,
2019, 68(8): 087301.
doi: 10.7498/aps.68.20190095
|
[4] |
Zhang Zhi-Gang, Liu Feng-Rui, Zhang Qing-Chuan, Cheng Teng, Wu Xiao-Ping. Trapping of multiple particles by space speckle field and infrared microscopy. Acta Physica Sinica,
2014, 63(2): 028701.
doi: 10.7498/aps.63.028701
|
[5] |
Hua Yu-Chao, Dong Yuan, Cao Bing-Yang. Monte Carlo simulation of phonon ballistic diffusive heat conduction in silicon nanofilm. Acta Physica Sinica,
2013, 62(24): 244401.
doi: 10.7498/aps.62.244401
|
[6] |
Zhang Zhi-Gang, Liu Feng-Rui, Zhang Qing-Chuan, Cheng Teng, Gao Jie, Wu Xiao-Ping. Infrared microscopic observation of trapped absorbing particles. Acta Physica Sinica,
2013, 62(20): 208702.
doi: 10.7498/aps.62.208702
|
[7] |
Sun Yun-Bin, Zhang Xiang-Qun, Li Guo-Ke, Yang Hai-Tao, Cheng Zhao-Hua. Effects of oxygen vacancy on impurity distribution and exchange interaction in Co-doped TiO2. Acta Physica Sinica,
2012, 61(2): 027503.
doi: 10.7498/aps.61.027503
|
[8] |
Yu Chen-Hui, Zhang Bo, Yu Li-Bo, Li Ya-Jun, Lu Wei, Shen Xue-Chu. Compensating impurity in high purity silicon single crystal investigated by photo-thermal ionization spectroscopy. Acta Physica Sinica,
2008, 57(2): 1102-1108.
doi: 10.7498/aps.57.1102
|
[9] |
LIU JIAN, GAO ZHONG-CHENG, ZHANG CHUN-PING, TIAN JIAN-GUO, ZHANG GUANG-YIN. OPTICAL MICROSCOPIC STUDY OF THE INFLUENCE OF DIFFERENT ELECTRODES ON THE IONIC TRANSPORT CHARACTER OF α-LiIO3. Acta Physica Sinica,
1998, 47(12): 2040-2045.
doi: 10.7498/aps.47.2040
|
[10] |
SHI XIAO-HONG, LIU PU-LIN, GONG DA-WEI, CHEN ZHANG-HAI, SHI GUO-LIANG, SHEN XUE-CHU. PHOTOTHERMAL IONIZATION SPECTROSCOPY FOR SHALLOW DONOR IN Si1-xGex EPITAXIAL LAYER. Acta Physica Sinica,
1997, 46(2): 370-374.
doi: 10.7498/aps.46.370
|
[11] |
Pan Bi-Cai, Xia Shang-Da. . Acta Physica Sinica,
1995, 44(5): 745-754.
doi: 10.7498/aps.44.745
|
[12] |
CHEN JIAN-WEN, WANG ZHI-JIANG. ELECTRON HOLOGRAPHY AND ITS APPLICATION ON OBSERVATION OF MICRO-ELECTROSTATIC FIELD DISTRIBUTION. Acta Physica Sinica,
1993, 42(12): 1919-1927.
doi: 10.7498/aps.42.1919
|
[13] |
YU ZHI-YI, HUANG YE-XIAO, CHEN JIAN-XIANG, YE HONG-JUAN, SHEN XUE-CHU, E. E. HALLER. FOURIER TRANSFORM PHOTOTHERMAL IONIZATION SPEC-TROSCOPY OF SHALLOW IMPURITIES IN SEMICONDUCTORS. Acta Physica Sinica,
1989, 38(11): 1869-1873.
doi: 10.7498/aps.38.1869
|
[14] |
WU JI-AN. ELECTRONIC STATES OF SUBSTITUTIONAL AND INTERSTITIAL GROUP-IB IMPURITIES IN SILICON. Acta Physica Sinica,
1988, 37(7): 1124-1130.
doi: 10.7498/aps.37.1124
|
[15] |
XIA JIAN-BAI. DEEP LEVELS OF TRANSITION IMPURITIES IN SILICON. Acta Physica Sinica,
1984, 33(10): 1418-1426.
doi: 10.7498/aps.33.1418
|
[16] |
XIA RI-YUAN. IMPURITY OUT-DIFFUSION MODEL IN RECRYSTALLIZATION OF AMORPHOUS LAYER DUE TO HIGH DOSE ION IMPLANTATION. Acta Physica Sinica,
1980, 29(5): 566-576.
doi: 10.7498/aps.29.566
|
[17] |
LIN HONG-YI. AN INVESTIGATION OF THE IMPURITY PROFILE OF THE 4mm BAND SILICON AVALANCHE DIODE BY MEANS OF THE SCHOTTKY BARRIER CHARACTERISTICS. Acta Physica Sinica,
1978, 27(3): 291-302.
doi: 10.7498/aps.27.291
|
[18] |
. ДИФФУЗИЯ ФОСФОРА В ОКИСНОМ СЛОЕ НА ПОВЕРХНОСТИ КРЕМНИЯ. Acta Physica Sinica,
1965, 21(3): 496-502.
doi: 10.7498/aps.21.496
|
[19] |
LING SHU-LEN, HUANG CHAANG, SHU BIENG-HUA. MEASUREMENT OF THE IMPURITY DISTRIBUTION OF DIFFUSED LAYERS IN SILICON BY THE FOUR-POINT PROBE AND THE ANODIC OXIDATION TECHNIQUE. Acta Physica Sinica,
1964, 20(7): 643-653.
doi: 10.7498/aps.20.643
|
[20] |
. ДИФФУЗИЯ ЧУЖЕРОДНЫХ ПРИМЕСЕЙ В Cu2O. Acta Physica Sinica,
1958, 14(6): 442-448.
doi: 10.7498/aps.14.442
|