In this paper, the scattering of electrons by 〈110〉-screw dislocations insilicon crystals is discussed. We use the tight-binding approximation, only electrons in the s and p state are taken into account. With the long wave length approximation, only scattering of electrons near Г in the first BZ is considered. A scattering theoretical approach yields an integral equation of Kirchh off-Huygens type. The scatlering equation has been solved by means of gauge transformation and Green's function. It is confirmed that, as in the ease of single band in the case of many bands the shadow, which is the region that can not be affected by electron flux, appears in the down stream side of dislocations as well.
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