Chemical etching method was used to measure the velocity of isolated dislocations in silican crystals for temperatures in the range of 400-900℃ and under stresses in the range of 0.35-13kg·mm-2. Dislocation Velocity v(τ, T) as a function of temperature (T) and stress (τ) satisfies the following equation v(τ,T)=Aτme-Q/(KT) where m = 1.02-1.49, Q = 1.96-2.07eV. Finally, the experimental results obtained on the motion of dislocations in silican single crystals were compared with those derived from the kink model of extended dislocation.
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