[1] |
Zhang Jie-Yin, Gao Fei, Zhang Jian-Jun. Research progress of silicon and germanium quantum computing materials. Acta Physica Sinica,
2021, 70(21): 217802.
doi: 10.7498/aps.70.20211492
|
[2] |
Guo Hui, Lu Hong-Liang, Huang Li, Wang Xue-Yan, Lin Xiao, Wang Ye-Liang, Du Shi-Xuan, Gao Hong-Jun. Intercalation and its mechanism of high quality large area graphene on metal substrate. Acta Physica Sinica,
2017, 66(21): 216803.
doi: 10.7498/aps.66.216803
|
[3] |
Zeng Xiang-An, Ai Bin, Deng You-Jun, Shen Hui. Study on light-induced degradation of silicon wafers and solar cells. Acta Physica Sinica,
2014, 63(2): 028803.
doi: 10.7498/aps.63.028803
|
[4] |
Zhou Nai-Gen, Hu Qiu-Fa, Xu Wen-Xiang, Li Ke, Zhou Lang. A comparative study of different potentials for molecular dynamics simulations of melting process of silicon. Acta Physica Sinica,
2013, 62(14): 146401.
doi: 10.7498/aps.62.146401
|
[5] |
Li Bao-Jia, Zhou Ming, Zhang Wei. Femtosecond laser induced silicon surface cone microstructures by covering transparent films. Acta Physica Sinica,
2012, 61(23): 237901.
doi: 10.7498/aps.61.237901
|
[6] |
Lan Hui-Qing, Xu Cang. Molecular dynamics simulation on friction process of silicon-doped diamond-like carbon films. Acta Physica Sinica,
2012, 61(13): 133101.
doi: 10.7498/aps.61.133101
|
[7] |
Cao Si, Gong Jia, Zhong Cheng, Li Jin, Jiang Yi-Ming. Transport mechanism of copper thin film oxidation by isotopic labeling. Acta Physica Sinica,
2011, 60(7): 078101.
doi: 10.7498/aps.60.078101
|
[8] |
Liu Xin-Guo, Sun Hai-Zhu, Liu Hui-Rong, Zhang Qing-Gang. Stereodynamics study of O+ +H2 reaction and its isotopic variants. Acta Physica Sinica,
2010, 59(11): 7796-7802.
doi: 10.7498/aps.59.7796
|
[9] |
Yuan Chun-Hua, Li Xiao-Hong, Tang Duo-Chang, Yang Hong-Dao, Li Guo-Qiang. Evolution of silicon surface microstructure induced by Nd:YAG nanosecond laser. Acta Physica Sinica,
2010, 59(10): 7015-7019.
doi: 10.7498/aps.59.7015
|
[10] |
Kong Hao, Liu Xin-Guo, Xu Wen-Wu, Liang Jing-Juan, Zhang Qing-Gang. Stereodynamics study of the reactions of He+H+2 and its isotopic variants. Acta Physica Sinica,
2009, 58(10): 6926-6931.
doi: 10.7498/aps.58.6926
|
[11] |
Liu Xing-Chong, Lu Zhi-Hai, Lu Zhong-Lin, Zhang Feng-Ming, Du You-Wei. Ferromagnetism in polycrystalline Si0.9654Mn0.0346:B thin films. Acta Physica Sinica,
2008, 57(11): 7262-7266.
doi: 10.7498/aps.57.7262
|
[12] |
Tang Xin-Xin, Luo Wen-Yun, Wang Chao-Zhuang, He Xin-Fu, Zha Yuan-Zi, Fan Sheng, Huang Xiao-Long, Wang Chuan-Shan. Non-ionizing energy loss of low energy proton in semiconductor materials Si and GaAs. Acta Physica Sinica,
2008, 57(2): 1266-1270.
doi: 10.7498/aps.57.1266
|
[13] |
Li Ai-Hua, Zhang Kai-Wang, Meng Li-Jun, Li Jun, Liu Wen-Liang, Zhong Jian-Xin. Novel silicon nanostructures based on graphene ribbons. Acta Physica Sinica,
2008, 57(7): 4356-4363.
doi: 10.7498/aps.57.4356
|
[14] |
Meng Li-Jun, Zhang Kai-Wang, Zhong Jian-Xin. Molecular dynamics simulation of formation of silicon nanoparticles on surfaces of carbon nanotubes. Acta Physica Sinica,
2007, 56(2): 1009-1013.
doi: 10.7498/aps.56.1009
|
[15] |
Liu Li-Feng, Lü Hui-Bin, Dai Shou-Yu, Chen Zheng-Hao. Rectifying characteristics of La0.9Sr0.1MnO3/Si p-n diodes. Acta Physica Sinica,
2005, 54(5): 2342-2345.
doi: 10.7498/aps.54.2342
|
[16] |
Jiang Jin-Long, Li Wen-Jie, Zhou Li, Zhao Ru-Guang, Yang Wei-Sheng. Investigation of stable high-index silicon surfacesby means of LEED pattern analysis. Acta Physica Sinica,
2003, 52(1): 156-162.
doi: 10.7498/aps.52.156
|
[17] |
Zhang Yong-Peng, Yan Long, Xie Si-Shen, Pang Shi-Jin, Gao Hong-Jun. . Acta Physica Sinica,
2002, 51(2): 296-299.
doi: 10.7498/aps.51.296
|
[18] |
. . Acta Physica Sinica,
2002, 51(2): 382-388.
doi: 10.7498/aps.51.382
|
[19] |
Li Wen-Jie, Jiang Jin-Long, Zhou Li, Zhao Nu-Guang, Yang Wei-Sheng. . Acta Physica Sinica,
2002, 51(11): 2567-2574.
doi: 10.7498/aps.51.2567
|
[20] |
DAI YONG-BING, SHEN HE-SHENG, ZHANG ZHI-MING, HE XIAN-CHANG, HU XIAO-JUN, SUN FANG-HONG, XIN HAI-WEI. A MOLECULAR DYNAMICS SIMULATION OF DIAMOND/SILICON(001) INTERFACE. Acta Physica Sinica,
2001, 50(2): 244-250.
doi: 10.7498/aps.50.244
|