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By LLP(Lee-Low-Pines)-like transformation and fractional-dimension variational treatment, the ground-state energies of excitons confined in Ga1－xAlxAs/GaAs/Ga0.7Al0.3As asymmetric square quantum well and the influence of phonons are demonstrated. The exciton ground-state energy has a minimum value with the increasing well width. And we make clear the effects of the barrier height on the fractional dimension, exciton ground energy and binding energy. After taking into account of the interaction of exciton with LO-phonons, the values of the exciton ground-state energies increase remarkablely. Moreover, the exciton binding energy increases as the asymmetric well-width decreases or the barrier height increases.
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Keywords:
- asymmetric square quantum well /
- exciton /
- phonons /
- ground-state energy
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[3] Sen S, Capasso F, Gossard A C, Spah R A,Hutchinson A L, Chu S N G 1987 Appl. Phys. Lett. 51 1428
[4] Chou S Y, Harris J S 1988 Appl. Phys. Lett. 52 1422
[5] Yuh P, Wang K L 1988 Phys. Rev. B 38 13370
[6] Kopf R F, Herman M H, Schnoes M L, Perley A P, Livescu G, Ohring M 1992 J. Appl. Phys. 71 5004
[7] Liu C H,Chen C Y,Ma B K 2002 Acta Phys. Sin. 51 2022(in Chinese) [刘翠红、陈传誉、马本堃 2002 物理学报 51 2022]
[8] Zhao F Q,Zhou B Q 2007 Acta Phys. Sin. 56 4856(in Chinese) [赵凤岐、周炳卿 2007 物理学报 56 4856]
[9] Yu Y F, Xiao J L, Yin J W, Wang Z W 2008 Chin. Phys. B 17 2236
[10] Sakiroglu S, Dogan U, Yildiz A, Akgungor K, Epik H, Ergun Y, Sari H, Sokmen I 2009 Chin. Phys. B 18 1578
[11] Harouni M B, Roknizadeh R, Naderi M H 2009 Phys. Rev. B 79 165304
[12] Mikhailov I D, Garcia L F, Marin J H 2008 Microelectron. J. 39 378
[13] Senger R T, Bajaj K K 2003 Phys. Rev. B 68 045313
[14] Wendler L, Haupt R 1987 Phys. Stat. Sol. (b) 143 487
[15] Mori N, Ando T 1989 Phys. Rev. B 40 6275
[16] Liang X X 1992 J. Phys.: Condens. Matter 4 9769
[17] Zhao F Q, Liang X X 2002 Chin. Phys. Lett. 19 974
[18] Miller R C, Kleinmann D A, Tsang W T, Gossard A C 1981 Phys. Rev. B 24 1134
[19] Greene R L, Bajaj K K, Phelps D E 1984 Phys. Rev. B 29 1807
[20] Miller D A, Chemla D S, Damen T D, Gossard A C, Wiegmann W, Wood T, Burrus C A 1985 Phys. Rev. B 32 1043
[21] Zheng R S, Matsuura M 1997 Phys. Rev. B 56 2058
[22] Andreani L C, Pasquarello A 1990 Phys. Rev. B 42 8928
[23] Leavitt R P, Little J W 1990 Phys. Rev. B 42 11744
[24] Antonelli A, Cen J, Bajaj K K 1996 Semicond. Sci. Technol. 11 74
[25] Chen R, Bajaj K K 1997 Phys. Stat. Sol. (b) 199 417
[26] Zhao G J, Liang X X, Ban S L 2003 Mod. Phys. Lett. B 17 863
[27] He X F 1991 Phys. Rev. B 43 2063
[28] Mathiew H, Lefebvre P, Christol P 1992 Phys. Rev. B 46 4092
[29] de Dios-Leyva M, Bruno-Alfonso A, Matos-Abiague A, Oliveira L E 1997 J. Phys.: Condens. Matter 9 8477
[30] Wang Z P, Liang X X, Wang X 2007 Phys J. B 59 41
[31] Matos-Abiague A 2002 Semicond. Sci. Technol. 17 150
[32] Mayes A, Yasan A, McClintock R, Shiell D, Darvish S R, Kung P, Razegh M 2004 Appl. Phys. Lett. 84 1046
[33] Koga T, Nitta J, Akazaki T, Takayanagi H, 2002 Phys. Rev. Lett. 89 046801
[34] Mathieu H, Lefebvre P, Christol P 1992 Phys. Rev. B 46 4092
[35] Wang Z P, Liang X X 2005 Chin. Phys. Lett. 22 2367
[36] Oshiro K, Akai K, Matsuura M 2002 Phys. Rev. B 66 153308
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[1] Zhang H, Liu L, Liu J J 2007 Acta Phys.Sin. 56 487(in Chinese) [张 红、刘 磊、刘建军 2007 物理学报 56 487]
[2] Miller R C, Gossard A C, Kleinman D A, Munteanu O 1984 Phys. Rev. B 29 3470
[3] Sen S, Capasso F, Gossard A C, Spah R A,Hutchinson A L, Chu S N G 1987 Appl. Phys. Lett. 51 1428
[4] Chou S Y, Harris J S 1988 Appl. Phys. Lett. 52 1422
[5] Yuh P, Wang K L 1988 Phys. Rev. B 38 13370
[6] Kopf R F, Herman M H, Schnoes M L, Perley A P, Livescu G, Ohring M 1992 J. Appl. Phys. 71 5004
[7] Liu C H,Chen C Y,Ma B K 2002 Acta Phys. Sin. 51 2022(in Chinese) [刘翠红、陈传誉、马本堃 2002 物理学报 51 2022]
[8] Zhao F Q,Zhou B Q 2007 Acta Phys. Sin. 56 4856(in Chinese) [赵凤岐、周炳卿 2007 物理学报 56 4856]
[9] Yu Y F, Xiao J L, Yin J W, Wang Z W 2008 Chin. Phys. B 17 2236
[10] Sakiroglu S, Dogan U, Yildiz A, Akgungor K, Epik H, Ergun Y, Sari H, Sokmen I 2009 Chin. Phys. B 18 1578
[11] Harouni M B, Roknizadeh R, Naderi M H 2009 Phys. Rev. B 79 165304
[12] Mikhailov I D, Garcia L F, Marin J H 2008 Microelectron. J. 39 378
[13] Senger R T, Bajaj K K 2003 Phys. Rev. B 68 045313
[14] Wendler L, Haupt R 1987 Phys. Stat. Sol. (b) 143 487
[15] Mori N, Ando T 1989 Phys. Rev. B 40 6275
[16] Liang X X 1992 J. Phys.: Condens. Matter 4 9769
[17] Zhao F Q, Liang X X 2002 Chin. Phys. Lett. 19 974
[18] Miller R C, Kleinmann D A, Tsang W T, Gossard A C 1981 Phys. Rev. B 24 1134
[19] Greene R L, Bajaj K K, Phelps D E 1984 Phys. Rev. B 29 1807
[20] Miller D A, Chemla D S, Damen T D, Gossard A C, Wiegmann W, Wood T, Burrus C A 1985 Phys. Rev. B 32 1043
[21] Zheng R S, Matsuura M 1997 Phys. Rev. B 56 2058
[22] Andreani L C, Pasquarello A 1990 Phys. Rev. B 42 8928
[23] Leavitt R P, Little J W 1990 Phys. Rev. B 42 11744
[24] Antonelli A, Cen J, Bajaj K K 1996 Semicond. Sci. Technol. 11 74
[25] Chen R, Bajaj K K 1997 Phys. Stat. Sol. (b) 199 417
[26] Zhao G J, Liang X X, Ban S L 2003 Mod. Phys. Lett. B 17 863
[27] He X F 1991 Phys. Rev. B 43 2063
[28] Mathiew H, Lefebvre P, Christol P 1992 Phys. Rev. B 46 4092
[29] de Dios-Leyva M, Bruno-Alfonso A, Matos-Abiague A, Oliveira L E 1997 J. Phys.: Condens. Matter 9 8477
[30] Wang Z P, Liang X X, Wang X 2007 Phys J. B 59 41
[31] Matos-Abiague A 2002 Semicond. Sci. Technol. 17 150
[32] Mayes A, Yasan A, McClintock R, Shiell D, Darvish S R, Kung P, Razegh M 2004 Appl. Phys. Lett. 84 1046
[33] Koga T, Nitta J, Akazaki T, Takayanagi H, 2002 Phys. Rev. Lett. 89 046801
[34] Mathieu H, Lefebvre P, Christol P 1992 Phys. Rev. B 46 4092
[35] Wang Z P, Liang X X 2005 Chin. Phys. Lett. 22 2367
[36] Oshiro K, Akai K, Matsuura M 2002 Phys. Rev. B 66 153308
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