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The high quality, high purity and large size Lanthanum hexaborides (LaB6) single crystals have been successfully grown by optical floating zone method. The optimum crystal growth parameters are listed as follow: sample rotation rate is 30 r/min and the growth rate is 810 mm/h. The largest thermionic emission current density of (100) crystal surface is 44.36 A/cm2 at 1873 K. The work function at absolute zero is calculated to be 1.99 eV by Richardson line method, and the average value of effective work functions at different temperatures are calculated to be 2.59 eV. The field emission characteristic of single crystal LaB6 field emitting single tip show that the maximum field emission current density is 4.9106 Acm-2 and the field enhancement factor is calculated to be 41500 cm-1, indicating excellent field emission performance. Thus, the single crystal is a promising cathode material for practical applications regarding to its excellent thermionic emission or field emission properties.
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Keywords:
- floating zone growth /
- single crystal LaB6 /
- thermionic emission property /
- field emission property
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[49] -
[1] Lafferty J M 1951 J. Appl. Phys. 22 299
[2] Mandrus D, Sales B C, Jin R 2001 Phys. Rev. B 64 012302
[3] [4] [5] Nishitani R, Aono M, TanaKa T, Kawai S, Iwasaki H, Oshima C, Nakamura S 1980 Surf. Sci. 95 341
[6] [7] Futamoto M, Nakazawa M, Kawabe U 1980 Surf. Sci. 100 470
[8] [9] Rokuta E, Yamamoto N, Hasegawa Y, Trenary M, Nagao T, Oshima C, Otani S 1998 Surf. Sci. 416 363
[10] [11] Zhang H, Zhang Q, Zhao G P, Tang J, Zhou O, Qin L C 2005 J. Am. Chem.Soc. 127 13120
[12] [13] Zhang H, Zhang Q, Tang J, Qin L C 2005 J. Am. Chem. Soc. 127 2862
[14] Zhang H, Zhang Q, Tang J, Qin L C 2005 J. Am. Chem. Soc. 127 8002
[15] [16] [17] Late D J, Date K S, More M A, Misra P, Singh B N, Kukreja L M, Dharmadhikari C V, Joag D S 2008 Nanotechnology 19 265605
[18] [19] Late D J, More M A, Misra P, Singh B N, Kukreja L M, Joag D S 2007 Ultramicroscopy 107 825
[20] [21] Olsen G H, Cafiero A V 1978 J. Crystal Growth 44 287
[22] [23] Mituko O 1976 J. Crystal Growth 33 193
[24] Aida T, Fukazawa T 1987 J. Crystal Growth 80 9
[25] [26] [27] Wang S, Pomjakushina E, Shiroka T, Deng G, Nikseresht N, Ruegg C, Conder K 2010 J. Crystal Growth 313 51
[28] [29] Souptel D, Behr G, Ivanenko L, Vinzelberg H, Schumann J 2002 J. Crystal Growth 244 296
[30] [31] Uijttewaal M A, DeWijs G A, Groot R A 2006 J. Phys. Chem. B 110 18459
[32] [33] Gesley M, Swanson L W 1984 Cystal Growth 146 583
[34] [35] Yamamoto N, Rokuta E, Hasegawa Y, Nagao T, Trenary M, Oshima C, Otani S 1996 Surf. Sci. 348 133
[36] [37] Jin X, Liu X S, Huang S R, Cai G H 1995 High Power Laser and Particle Beams 7 555 (in Chinese) [金 晓、刘锡三、黄孙仁、蔡公和 1995 强激光与粒子束 7 555]
[38] Wang H B, Xu Z, Lu H P, Deng R P, Yang X, Gan K Y, Jin X, Li M, Liu X S 2005 High Power Laser and Particle Beams 17 932 (in Chinese) [王汉斌、许 州、卢和平、邓仁培、杨 肖、甘孔银、金晓、黎 明、刘锡三 2005 强激光与粒子束 17 932]
[39] [40] Yao J F, Chen X, Jiang J P, Li J, Gao Y J, Yan S Q, Chen Q L 2002 Vacuum Electronics 1 1 (in Chinese) [姚剑峰、陈 旭、江剑平、李 季、高玉娟、阎肃秋、陈其略 2002 真空电子技术 1 1]
[41] [42] Futamoto M, Nakazawa M and Kawabe U 1980 Surf. Sci. 100 470
[43] [44] Swanson L W, Mcneely D R 1979 Surf. Sci. 83 11
[45] [46] Cheng H, Jiang J P 1987 Cathode Electronics (Xi'an: Northwest Institute of Telecommunication Publishing House) p84 (in Chinese) [承 欢、江剑平 1986 阴极电子学 (西安: 西北电讯工程学院出版社) 第84页]
[47] [48] Wang X J,Lin Z L, Qi K C, Chen Z X, Wang Z G, Jiang Y D 2007 Chinese Journal of Luminescence 28 429 (in Chinese) [王小菊、林祖伦、祁康成、陈泽祥、汪志刚、蒋亚东 2007 发光材料 28 429]
[49]
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