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The measurement of carrier mobility in organic semiconductor material and device is one of important study contents. The hole-only devices based on the different solvent blends of poly (3-hexylthiophene) (P3HT) and [6, 6]-phenyl C61-butyric acid methyl ester (PCBM) as acceptor are fabricated, the structures of the devices are all ITO/PEDOT:PSS/P3HT:PCBM/Au. The hole mobilities in the blend systems with different solvents and various annealing treatments are measured by the space charge limited current method. The results show that the J-V curves of charge transfer in the devices meet Mott-Gurney equation, the hole mobilities in the active layer with different solvents are different, the active layer formed with high boiling point solvent 1, 2-dichlorobenzene possesses higher hole mobility, heat treatment contributes to the improvement of the hole mobility in the devices. The reason of change of hole mobility is analyzed.
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Keywords:
- space charge limited current /
- mobility /
- polymer
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[18] Lenes M, Morana M, Brabec C J, Blom P W M 2009 Adv. Funct. Mater. 19 1106
[19] Yu H Z, Peng J B 2008 Chin. Phys. B 17 3143
[20] Mihailetchi V D, Xie H X, Boer B D, Popescu L M, Hummelen J C, Blom P W M 2006 Appl. Phys. Lett. 89 012107
[21] Li G, Shrotriya V, Huang J S, Yao Y, Moriarty T, Emery K, Yang Y 2005 Nat. Mater. 4 864
[22] Ma W L, Yang C Y, Gong X, Lee K, Heeger A J 2005 Adv. Funct. Mater. 15 1617
[23] Yu H Z, Peng J B 2008 Chin. Phys. Lett. 25 1411
[24] Zhao Y, Xie Z Y, Qu Y, Geng Y H, Wang L X 2007 Appl. Phys. Lett. 90 043504
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[1] Liu J C, Wang W L, Yu H Z, Wu Z L, Peng J B, Cao Y 2008 Sol. Energy Mater. Sol. Cells 92 1403
[2] Liang Y, Xu Z, Xia J, Tsai S, Wu Y, Li G, Ray C, Yu L 2010 Adv. Mater. 22 1
[3] He Y J, Chen H Y, Hou J H, Li Y F 2010 J. Am. Chem. Soc. 132 1377
[4] Wang Y, Hou Y B, Tang A W, Feng Z H, Feng B, Li Y, Teng F 2009 Nanoscale Res. Lett. 4 674
[5] Yu H Z, Peng J B 2008 Org. Electron. 9 1022
[6] Li Y F, Zou Y P 2008 Adv. Mater. 20 2952
[7] Sang G Y, Zou Y P, Huang Y, Zhao G J, Yang Y, Li Y F 2009 Appl. Phys. Lett. 94 193302
[8] Yu H Z, Wen Y X 2011 Acta Phys. Sin. 60 038401 (in Chinese) [於黄忠, 温源鑫 2011 物理学报 60 038401]
[9] Yu H Z, Zhou X M, Deng J Y 2011 Acta Phys. Sin. 60 077206 (in Chinese) [於黄忠, 周晓明, 邓俊裕 2011 物理学报 60 077206]
[10] Zhou Y H, Yang Z F, Wu W C, Xia H J, Wen S P, Tian W J 2007 Chin. Phys. B 16 2136
[11] Feng Z H, Hou Y B, Shi Q M, Qin L F, Li Y, Zhang L, Liu X J, Teng F, Wang Y S, Xia R D 2010 Chin. Phys. B 19 038601
[12] Peng B, Guo X, Cui C H, Zou Y P, Pan C Y, Li Y F 2011 Appl. Phys. Lett. 98 243308
[13] Sun Y M, Seo J H, Takacs C J, Seifter J, Heeger A J 2011 Adv. Mater. 23 1679
[14] Yu H Z 2010 Synth. Met. 160 2505
[15] Blom P W M, Mihailetchi V D, Koster L J A, Markov D E 2007 Adv. Mater. 19 1551
[16] Zhang Y A, Blom P W M 2010 Appl. Phys. Lett. 97 083303
[17] Nicolai H T, Wetzelaer G A H, Kuik M, Kronemeijer A J, Boer B D, Blom P W M 2010 Appl. Phys. Lett. 96 172107
[18] Lenes M, Morana M, Brabec C J, Blom P W M 2009 Adv. Funct. Mater. 19 1106
[19] Yu H Z, Peng J B 2008 Chin. Phys. B 17 3143
[20] Mihailetchi V D, Xie H X, Boer B D, Popescu L M, Hummelen J C, Blom P W M 2006 Appl. Phys. Lett. 89 012107
[21] Li G, Shrotriya V, Huang J S, Yao Y, Moriarty T, Emery K, Yang Y 2005 Nat. Mater. 4 864
[22] Ma W L, Yang C Y, Gong X, Lee K, Heeger A J 2005 Adv. Funct. Mater. 15 1617
[23] Yu H Z, Peng J B 2008 Chin. Phys. Lett. 25 1411
[24] Zhao Y, Xie Z Y, Qu Y, Geng Y H, Wang L X 2007 Appl. Phys. Lett. 90 043504
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