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The amorphous Ge20Sb15Se65 thin film was prepared by magnetron sputtering deposition technique. Effect of heat treatment temperature in the range of 150—400 ℃ on the optical properties of Ge20Sb15Se65 thin films has been investigated. The microstructure and optical properties of the films were characterized by UV-Vis, Raman spectroscopy and XRD, the optical constant was calculated using the Swanepoel method and Tauc's law from the optical transmission spectra. Results indicate that when the annealing temperature (Ta) is lower than the glass transition temperature (Tg), the optical band gap (Egopt) increases from 1.845 to 1.932 eV, and the refractive index decreases from 2.61 to 2.54, while the optical band gap decreases from 1.932 to 1.822 eV and the refractive index increases from 2.54 to 2.71 with a further increase of Ta. The results were explained in terms of the Mott and Davis model for amorphous materials and amorphous to crystalline structural transformations. It is well consistent with the results of structure analysis by XRD and Raman spectroscopy.
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Keywords:
- Ge20Sb15Se65 film /
- heat treatment /
- optical band gap /
- refractive index
[1] Seddon A B 1995 Journal of Non-Crystalline Solids 184 44
[2] Quémard C, Smektala F, Couderc V, Barthélémy A, Lucas J 2001 Journal of Physics and Chemistry of Solids 62 1435
[3] Li Z B, Lin C G, Nie Q H, Xu T F, Dai S X 2012 Acta Phys. Sin. 61 104207 (in Chinese) [李卓斌, 林常规, 聂秋华, 徐铁峰, 戴世勋 2012 物理学报 61 104207]
[4] Gai X, Han T, Prasad A, Madden S, Choi D-Y, Wang R, Bulla D, Luther-Davies B 2010 Opt. Express 18 26635
[5] Zakery A, Elliott S R 2003 Journal of Non-Crystalline Solids 330 1
[6] Lin C G, Li Z B, Tan H J, Ni W H, Li Y Y, Dai S X 2012 Acta Phys. Sin. 61 154212 (in Chinese) [林常规, 李卓斌, 覃海娇, 倪文豪, 李燕颖, 戴世勋 2012 物理学报 61 154212]
[7] Hô N, Laniel J M, ValléeR a, Villeneuve A 2003 Opt. Lett. 28 965
[8] Abdel-Rahim M A, Moharram A H, Dongol M, Hafiz M M 1990 Journal of Physics and Chemistry of Solids 51 355
[9] Shen X, Nie Q H, Xu T F, Dai S X, Wang X S, Wu L G 201 Acta Phys. Sin. 59 2045 (in Chinese) [沈祥, 聂秋华, 徐铁峰, 戴世勋, 王训四, 吴礼刚 2010 物理学报 59 2045]
[10] Anderson T, Petit L, Carlie N, Choi J, Hu J, Agarwal A, Kimerling L, Richardson K, Richardson M 2008 Opt. Express 16 20081
[11] Shaaban E R, Kaid M A, Moustafa E S, Adel A 2008 Journal of Physics D: Applied Physics 41 125301
[12] Nazabal V, Charpentier F, Adam J-L, Nemec P, Lhermite H, Brandily-Anne M-L, Charrier J, Guin J-P, Moréac A 2011 International Journal of Applied Ceramic Technology 8 990
[13] Swanepoel R 1985 J. Opt. Soc. Am. A 2 1339
[14] Manifacier J C, Gasiot J, Fillard J P 1976 Journal of Physics E: Scientific Instruments 9 1002
[15] Lucovsky G 1977 Phys. Rev. B 15 5762
[16] Kincl M, Tichý L 2008 Materials Chemistry and Physics 110 322
[17] Tanaka K 1980 Thin Solid Films 66 271
[18] Aly K A, Abousehly A M, Osman M A, Othman A A 2008 Physica B: Condensed Matter 403 1848
[19] Farid A M, El-Zawawi I K, Ammar A H 2012 Vacuum 86 1255
[20] Mott N F, Davis E A 1979 Electronic Processes in Non-Crystalline Materials
[21] Hasegawa S, Kitagawa M 1978 Solid State Communications 27 855
[22] Petit L, Carlie N, Richardson K, Guo Y, Schulte A, Campbell B, Ferreira B, Martin S 2005 Journal of Physics and Chemistry of Solids 66 1788
[23] Jackson K, Briley A, Grossman S, Porezag D V, Pederson M R 1999 Phys. Rev. B 60 R14985
[24] Němec P, Frumarová B, Frumar M 2000 Journal of Non-Crystalline Solids 270 137
[25] Maeda K, Sakai T, Sakai K, Ikari T, Munzar M, Tonchev D, Kasap S, Lucovsky G 2007 Journal of Materials Science: Materials in Electronics 18 367
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[1] Seddon A B 1995 Journal of Non-Crystalline Solids 184 44
[2] Quémard C, Smektala F, Couderc V, Barthélémy A, Lucas J 2001 Journal of Physics and Chemistry of Solids 62 1435
[3] Li Z B, Lin C G, Nie Q H, Xu T F, Dai S X 2012 Acta Phys. Sin. 61 104207 (in Chinese) [李卓斌, 林常规, 聂秋华, 徐铁峰, 戴世勋 2012 物理学报 61 104207]
[4] Gai X, Han T, Prasad A, Madden S, Choi D-Y, Wang R, Bulla D, Luther-Davies B 2010 Opt. Express 18 26635
[5] Zakery A, Elliott S R 2003 Journal of Non-Crystalline Solids 330 1
[6] Lin C G, Li Z B, Tan H J, Ni W H, Li Y Y, Dai S X 2012 Acta Phys. Sin. 61 154212 (in Chinese) [林常规, 李卓斌, 覃海娇, 倪文豪, 李燕颖, 戴世勋 2012 物理学报 61 154212]
[7] Hô N, Laniel J M, ValléeR a, Villeneuve A 2003 Opt. Lett. 28 965
[8] Abdel-Rahim M A, Moharram A H, Dongol M, Hafiz M M 1990 Journal of Physics and Chemistry of Solids 51 355
[9] Shen X, Nie Q H, Xu T F, Dai S X, Wang X S, Wu L G 201 Acta Phys. Sin. 59 2045 (in Chinese) [沈祥, 聂秋华, 徐铁峰, 戴世勋, 王训四, 吴礼刚 2010 物理学报 59 2045]
[10] Anderson T, Petit L, Carlie N, Choi J, Hu J, Agarwal A, Kimerling L, Richardson K, Richardson M 2008 Opt. Express 16 20081
[11] Shaaban E R, Kaid M A, Moustafa E S, Adel A 2008 Journal of Physics D: Applied Physics 41 125301
[12] Nazabal V, Charpentier F, Adam J-L, Nemec P, Lhermite H, Brandily-Anne M-L, Charrier J, Guin J-P, Moréac A 2011 International Journal of Applied Ceramic Technology 8 990
[13] Swanepoel R 1985 J. Opt. Soc. Am. A 2 1339
[14] Manifacier J C, Gasiot J, Fillard J P 1976 Journal of Physics E: Scientific Instruments 9 1002
[15] Lucovsky G 1977 Phys. Rev. B 15 5762
[16] Kincl M, Tichý L 2008 Materials Chemistry and Physics 110 322
[17] Tanaka K 1980 Thin Solid Films 66 271
[18] Aly K A, Abousehly A M, Osman M A, Othman A A 2008 Physica B: Condensed Matter 403 1848
[19] Farid A M, El-Zawawi I K, Ammar A H 2012 Vacuum 86 1255
[20] Mott N F, Davis E A 1979 Electronic Processes in Non-Crystalline Materials
[21] Hasegawa S, Kitagawa M 1978 Solid State Communications 27 855
[22] Petit L, Carlie N, Richardson K, Guo Y, Schulte A, Campbell B, Ferreira B, Martin S 2005 Journal of Physics and Chemistry of Solids 66 1788
[23] Jackson K, Briley A, Grossman S, Porezag D V, Pederson M R 1999 Phys. Rev. B 60 R14985
[24] Němec P, Frumarová B, Frumar M 2000 Journal of Non-Crystalline Solids 270 137
[25] Maeda K, Sakai T, Sakai K, Ikari T, Munzar M, Tonchev D, Kasap S, Lucovsky G 2007 Journal of Materials Science: Materials in Electronics 18 367
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