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Beam loading is an important parameter in extended interaction klystron, which can be used to analyze the influence of beam on resonant frequency and ohm loss Q, and study the match condition between input cavity and external power source, etc. Based on the kinematical theory, law of induce current, principle of charge conservation under the small signal condition, and one-dimensional (1D) mode, the transit time effect of electron in
${\text{π}}$ mode standing wave electric treld in a multiple-gap resonator is analyzed, and the expressions of electron load conductance and electron load susceptance in the multiple-gap resonator are presented. The results show that the electron load conductance of extended interaction cavity can change in a bigger extension than that of traditional single gap cavity, which means that the loaded Q of extended interaction cavity can be adjusted in a bigger extension to realize a desired Q. And the results also show that the electron load susceptance of extended interaction cavity can change in a bigger extension than that of traditional single gap cavity, which means that the loaded frequency of extended interaction cavity can also be easily adjusted to a desired value. The influence of gap number on the power exchange between beam and microwave is also investigated, which shows that the maximum power exchange between beam and microwave electric field increases with the number of resonator gaps increasing, and so does the efficiency of klystron. A W band extended interaction klystron amplifoer is designed by the above theory analysis and three-dimensional (3D) PIC code. The simulation results show that when beam voltage is 20.8 kV, current is 0.28 A, input power is 30 mW at a frequency of 94.77 GHz, the extended interaction klystron can produce 443 W output power. The responding electron efficiency is 7.6%, the gain is 41.7 dB, and the 3 dB bandwidth exceeds 150 MHz. The extended interaction klystron is machined and tested, and the experimental results show that the maximum output power of 175 W is obtained with a beam of 300 mA, a voltage of 20.8 kV, and an input microwave power of 30 mW at a frequency of 95.37 GHz in a magnetic field of 0.62 T. The responding electron efficiency is 2.8%, the gain is 34.6 dB, the 3-dB bandwidth exceeds 90 MHz. This study is meaningful for designing and developing greater power extended interaction klystrons.-
Keywords:
- W-band /
- extended interaction klystron /
- transit-time effect /
- beam loading
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[3] Brian S, Albert R, Peter H, Mark H, Richard D, Dave B IEEE Radar Conference Pasadena, USA, May 4−8, 2009 p1
[4] Toreev A I, Fedorov V K 2011 Appl. Phys. 52 109
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Wu Y, Xu Z, Zhou L, Li W J, Tang C X 2012 Acta Phys. Sin. 61 224101
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[6] 刘振帮, 赵欲聪, 黄华, 金晓, 雷禄容 2015 物理学报 64 108404
Liu Z B, Zhao Y C, Huang H, Jin X, Lei L R 2015 Acta Phys. Sin. 64 108404
[7] 丁耀根 2010 大功率速调管的设计制造和应用 (北京: 国防工业出版社) 第8—17页
Ding Y G 2010 Design, Manufacture and Application of High Power Klystron (Beijing: National Defense Industry Press) pp8−17 (in Chinese)
[8] Albert R, Dave B, Brian S 2005 IEEE Trans. Electron Devices 52 895
Google Scholar
[9] Brian S, Albert R, Peter H, Mark H, Richard D, Dave B 2011 41st European Microwave Conference Manchester, UK, Oct 10−13, 2011 p984
[10] Peter H, Dave B, Brian S IEEE International Vacuum Electronics Conference Kitakytushu, Japan, May 15−17, 2007 p149
[11] 韦莹, 殷亮, 杨继涛, 周军, 李东凤, 欧阳佳佳, 窦钺, 钟勇 2018 中国电子学会真空电子学分会第二十一届学术年会 中国平凉 2018年8月23—26日 第218页
Wei Y, Yin L, Yang J T, Zhou J, Li D F, Ouyang J J, Dou Y, Zhong Y 2018 The Chinese Institute of Electronics Conference on Vacuum Electronics Pingliang, China, Aug. 23−26, 2018 p218 (in Chinese)
[12] 范植开, 刘庆想, 刘锡三, 周传民, 胡海膺 1999 强激光与粒子束 11 633
Fan Z K, Liu Q X, Liu X S, Zhou C M, Hu H Y 1999 High Power Laser and Particle Beams 11 633
[13] Zhao Y C, Li S F, Huang H, Liu Z B, Wang Z L, Dan Z Y, Li X Y, Wei Y Y, Gong Y B 2015 IEEE Trans. Plasma Sci. 43 1862
Google Scholar
[14] Marcum J 1946 J. Appl. Phys. 17 4
Google Scholar
[15] Marder B M, Clark M C, Bacon L D, Hoffman J M, Lemke R W, Coleman P D 1992 IEEE Trans. Plasma Sci. 20 312
Google Scholar
[16] Yuan Y S, Li K W, Wang N, Yoshiro I, Wang S 2015 Chin. Phys. C 39 047003
Google Scholar
[17] 曾造金 2014 硕士学位论文(成都: 电子科技大学)
Zeng Z J 2014 M. S. Thesis (Chengdu: University of Electronic Science and Technology of China) (in Chinese)
[18] 谢家麟, 赵永翔1966 速调管群聚理论(北京: 科学出版社) 第33—37页
Xie J L, Zhao Y X 1966 Bunching Theory of Klystron (Beijing: Science Press) p33−37 (in Chinese)
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Google Scholar
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Ding Y G 2008 Theory and Computer Simulation of High Power Klystron (Beijing: National Defense Industry Press) p75 (in Chinese)
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Google Scholar
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Chen Y D, Jin X, Li Z H, Huang H, Wu Y 2012 Acta Phys. Sin. 61 228501
Google Scholar
[23] Bi L J, Yin Y, Xu C P, Zhang Z, Chang Z W, Zeng F B, Peng R B, Zhou W, Rauf A, Ullah S, Wang B, Li H L, Meng L 2017 IEEE Trans. Electron Devices 64 4686
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图 1 谐振腔等效电路
Figure 1. Equivalent circuit mode of cavity.
图 2 引入电子注后谐振腔等效电路
Figure 2. Equivalent circuit mode of cavity with beam.
图 3 多间隙谐振腔
${\text{π}}$ 模场示意图Figure 3. E-field of
${\text{π}}$ mode in multiple-gap cavity.
图 4 多间隙谐振腔
${\text{π}}$ 模场简化图Figure 4. Simplified E-field of
${\text{π}}$ mode in multiple-gap cavity.
图 5 归一化电子负载电导与渡越角的关系
Figure 5. GbN/G0 versus θ0 of multiple-gap cavity.
图 6 归一化电子负载电纳与渡越角的关系
Figure 6. BbN/G0 versus θ0 of multiple-gap cavity.
图 7 BbN为正值谐振腔等效电路
Figure 7. Equivalent circuit mode of cavity when BbN > 0.
图 8 BbN为负值时谐振腔等效电路
Figure 8. Equivalent circuit mode of cavity when BbN < 0.
图 9 分布作用速调管高频结构模型
Figure 9. Model of the extended interaction cavity.
图 10 输入腔各模式Ez沿轴向的分布
Figure 10. Ez versus axial distance of each mode in input cavity
图 11 中间腔各模式Ez沿轴向的分布
Figure 11. Ez versus axial distance of each mode in middle cavity.
图 12 输入腔各模式Qtotal与电压U的关系
Figure 12. Qtotal versus U of each mode in input cavity.
图 13 中间腔各模式Qtotal与电压U的关系
Figure 13. Qtotal versus U of each mode in middle cavity.
图 14 瞬时输入功率波形
Figure 14. Waveform of input microwave.
图 15 调制电流基频分量沿轴向的分布
Figure 15. fundamental modulated current amplitude versus axial distance.
图 16 瞬时输出功率波形
Figure 16. Waveform of output microwave.
图 17 输出功率与输入信号频率的关系
Figure 17. Output power versus input frequency.
图 18 分布作用速调管实物
Figure 18. Picture of extended interaction klystron.
图 19 分布作用速调管测试系统
Figure 19. Test system of extended interaction klystron.
图 20 高频样管测试结果
Figure 20. Test result of extended interaction klystron.
图 21 高频样管输出功率与输入信号频率的关系
Figure 21. Measured output power vs input frequency.
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[1] Toreev A I, Fedorov V K, Patrusheva E V 2009 J. Commun. Technol. Electron. 54 952
Google Scholar
[2] Brian S, Albert R, Peter H, Mark H, Richard D, Dave B IEEE Pulse Power Plasma Science Conference Albuquerque, USA, June 17−22, 2007 p1049
[3] Brian S, Albert R, Peter H, Mark H, Richard D, Dave B IEEE Radar Conference Pasadena, USA, May 4−8, 2009 p1
[4] Toreev A I, Fedorov V K 2011 Appl. Phys. 52 109
[5] 吴洋, 许州, 周霖, 李文君, 唐传祥 2012 物理学报 61 224101
Google Scholar
Wu Y, Xu Z, Zhou L, Li W J, Tang C X 2012 Acta Phys. Sin. 61 224101
Google Scholar
[6] 刘振帮, 赵欲聪, 黄华, 金晓, 雷禄容 2015 物理学报 64 108404
Liu Z B, Zhao Y C, Huang H, Jin X, Lei L R 2015 Acta Phys. Sin. 64 108404
[7] 丁耀根 2010 大功率速调管的设计制造和应用 (北京: 国防工业出版社) 第8—17页
Ding Y G 2010 Design, Manufacture and Application of High Power Klystron (Beijing: National Defense Industry Press) pp8−17 (in Chinese)
[8] Albert R, Dave B, Brian S 2005 IEEE Trans. Electron Devices 52 895
Google Scholar
[9] Brian S, Albert R, Peter H, Mark H, Richard D, Dave B 2011 41st European Microwave Conference Manchester, UK, Oct 10−13, 2011 p984
[10] Peter H, Dave B, Brian S IEEE International Vacuum Electronics Conference Kitakytushu, Japan, May 15−17, 2007 p149
[11] 韦莹, 殷亮, 杨继涛, 周军, 李东凤, 欧阳佳佳, 窦钺, 钟勇 2018 中国电子学会真空电子学分会第二十一届学术年会 中国平凉 2018年8月23—26日 第218页
Wei Y, Yin L, Yang J T, Zhou J, Li D F, Ouyang J J, Dou Y, Zhong Y 2018 The Chinese Institute of Electronics Conference on Vacuum Electronics Pingliang, China, Aug. 23−26, 2018 p218 (in Chinese)
[12] 范植开, 刘庆想, 刘锡三, 周传民, 胡海膺 1999 强激光与粒子束 11 633
Fan Z K, Liu Q X, Liu X S, Zhou C M, Hu H Y 1999 High Power Laser and Particle Beams 11 633
[13] Zhao Y C, Li S F, Huang H, Liu Z B, Wang Z L, Dan Z Y, Li X Y, Wei Y Y, Gong Y B 2015 IEEE Trans. Plasma Sci. 43 1862
Google Scholar
[14] Marcum J 1946 J. Appl. Phys. 17 4
Google Scholar
[15] Marder B M, Clark M C, Bacon L D, Hoffman J M, Lemke R W, Coleman P D 1992 IEEE Trans. Plasma Sci. 20 312
Google Scholar
[16] Yuan Y S, Li K W, Wang N, Yoshiro I, Wang S 2015 Chin. Phys. C 39 047003
Google Scholar
[17] 曾造金 2014 硕士学位论文(成都: 电子科技大学)
Zeng Z J 2014 M. S. Thesis (Chengdu: University of Electronic Science and Technology of China) (in Chinese)
[18] 谢家麟, 赵永翔1966 速调管群聚理论(北京: 科学出版社) 第33—37页
Xie J L, Zhao Y X 1966 Bunching Theory of Klystron (Beijing: Science Press) p33−37 (in Chinese)
[19] Li R J, Ruan C J, Zhang H F, Haq T U, He Y B, Shan S Y 2018 IEEE Trans. Electron Devices 65 3500
Google Scholar
[20] 丁耀根 2008 大功率速调管的理论与计算模拟(北京: 国防工业出版社) 第75 页
Ding Y G 2008 Theory and Computer Simulation of High Power Klystron (Beijing: National Defense Industry Press) p75 (in Chinese)
[21] 张泽海, 舒挺, 张军, 戚祖敏 2013 物理学报 62 040701
Google Scholar
Zhang Z H, Shu T, Zhang J, Qi Z M 2013 Acta Phys. Sin. 62 040701
Google Scholar
[22] 陈永东, 金晓, 李正红, 黄华, 吴洋 2012 物理学报 61 228501
Google Scholar
Chen Y D, Jin X, Li Z H, Huang H, Wu Y 2012 Acta Phys. Sin. 61 228501
Google Scholar
[23] Bi L J, Yin Y, Xu C P, Zhang Z, Chang Z W, Zeng F B, Peng R B, Zhou W, Rauf A, Ullah S, Wang B, Li H L, Meng L 2017 IEEE Trans. Electron Devices 64 4686
Google Scholar
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