Theoretical modeling and analyzing structural characteristics of AlGaAs/GaAs negative electron affinity array cathode with optically and electrically injected variable bandgap

Deng Wen-Juan; Zhou Tian; Wang Zhuang-Fei; Wu Yue-Chuan; Peng Xin-Cun; Zou Ji-Jun

doi:10.7498/aps.71.20221330

Abstract

In order to obtain high emission current efficiency of the AlGaAs/GaAs NEA array cathode, this array cathode has two ways to form electron emission, i.e. optical injection and electrical injection. The two-dimensional continuity equation of electronic transport in the variable bandgap emission array is solved numerically by using the finite volume method thereby obtaining the emission current and emission current efficiency. Simulation obtains the optimal parameter range for each layer of the AlGaAs/GaAs NEA array cathode under both optical injection and electrical injection. The results show that the optimal angle of incident light for the array cathode under light injection is 10°–30° for selecting an array micro-nano column with a duty cycle of 2/3. Under the condition of light injection, the P-type variable bandgap AlGaAs layer array micro-nano column height ranges from 0.3–0.6 μm. Under the condition of electrical injection, the height of the micro-nano column of the P-type variable bandgap AlGaAs layer array is 0.1–0.3 μm. The optimal thickness range of N-type variable bandgap AlGaAs layer, N-type AlGaAs layer, and P-type AlGaAs layer under light injection are 0.5–2.5 μm, 0.5–1.0 μm and 0.2–0.5 μm, respectively. The optimal thickness range of N-type variable bandgap AlGaAs layer, N-type AlGaAs layer, and P-type AlGaAs layer under electrical injection conditions are 2–3 μm, 0.8–1.2 μm and 0.1–0.3 μm, respectively. The optimal doping concentration of P-type AlGaAs layer and N-type AlGaAs layer under light injection are range from 5×10¹⁸ to 1×10¹⁹ cm^–3 and from 1×10¹⁸ to 5×10¹⁸ cm^–3, respectively. The optimal doping concentration of the P-type AlGaAs layer and the N-type AlGaAs layer under electrical injection range from 1×10¹⁸ to 5×10¹⁸ cm^–3 and from 5×10¹⁷ to 1×10¹⁸ cm^–3, respectively. The maximum efficiency of the emission current under the light injection is 35.04%, and the maximum emission current per unit length is 10.3 nA/μm. The maximum efficiency of the emission current under electrical injection is 31.23%, and the maximum emission current per unit length is 105.5 μA/μm. Electric injection cathode does not need expensive and complex drive laser system, and the light injection control mode is simple, so light injection or electrical injection control mode can be chosen as needed. The research of array cathode, which integrates the advantages of many advanced technologies, is of great significance for enriching the cathode array cathode emission theory and expanding its application field.

Keywords:

Authors and contacts

1.
Engineering Research Cente of Nuclear Technology Application, Ministry of Education, East China University of Technology, Nanchang 330013, China
2.
Jiangxi Province Engineering Research Center of New Energy Technology and Equipment, East China University of Technology, Nanchang 330013, China

Corresponding author: Zou Ji-Jun, jjzou@ecut.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 61961001, 11875012, 62061001, 61771245), the Natural Science Foundation of Jiangxi Province, China (Grant Nos. 20181BAB202026, 20192ACBL20003, 20202BAB202013, 20203BBE53030), the Jiangxi Double Thousand Plan, China (Grant No. jxsq2019201053), and the Science and Technology Project of Department of Education of Jiangxi Province, China (Grant No. GJJ170451).

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References

[1]	Tsentalovich E, Barkhuff D, Chen J, Dodson G, Farkhondeh M, Franklin W, Ihloff E, Kaertner F, Tschalaer C, Yang B, Zwart T 2007 Nucl. Instrum. Methods Phys. Res., Sect. A 582 413 Google Scholar
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[12]	Zhang Q, Bai X F, Cheng H C, Jiao G C, Li Z K, Han K, Li Q 2022 Acta Photonica Sin. 51 0304005 Google Scholar
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[14]	邓文娟, 彭新村, 邹继军, 江少涛, 郭栋, 张益军, 常本康 2014 物理学报 63 167902 Google Scholar Deng W J, Peng X C, Zou J J, Jiang S T, Guo D, Zhang Y J, Chang B K 2014 Acta Phys. Sin. 63 167902 Google Scholar
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Cited By

图 1 光和电注入阵列阴极结构

Figure 1. Optical and electrical injection array cathode structure.

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图 2 光和电注入NEA阵列阴极光电发射过程和能带结构图

Figure 2. Photoelectric emission process and band structure diagram of the light and electrical injection NEA array cathode.

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图 3 (a) 发射电流效率α随入射光波长变化曲线; (b) 发射电流效率α随入射光角度变化曲线, 其中阵列阴极N_a, N_d, T_cp, T_p, T_n和T_cn分别为5×10¹⁸ cm^–3, 1×10¹⁸ cm^–3, 0.2 μm, 0.1 μm, 0.3 μm和1.0 μm

Figure 3. (a) Emission current efficiency α versus incident wavelength; (b) emission current efficiency αversus incident light angle, where N_a, N_d, T_cp, T_p, T_n and T_cn of the array cathode are 5×10¹⁸ cm^–3, 1×10¹⁸ cm^–3, 0.2 μm, 0.1 μm, 0.3 μm and 1.0 μm, respectively.

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图 4 电注入阵列阴极发射电流和发射电流效率随电压变化曲线. 其中阵列阴极N_a, N_d, T_cp, T_p, T_n和T_cn分别为5×10¹⁸ cm^–3, 1×10¹⁸ cm^–3, 0.1 μm, 0.1 μm, 0.3 μm和1.0 μm

Figure 4. The cathodic emission current and emission current efficiency of the electrically implanted array vary with voltage. The array cathode N_a, N_d, T_cp, T_p, T_n and T_cn are 5×10¹⁸ cm^–3, 1×10¹⁸ cm^–3, 0.1 μm, 0.1 μm, 0.3 μm, 1.0 μm, respectively.

DownLoad: Full-Size Img PowerPoint

图 5 (a) 光注入时P型变带隙AlGaAs层厚度变化(a)和P型AlGaAs层厚度变化(b)对阵列阴极发射电流效率α的影响; 电注入时P型变带隙AlGaAs层厚度变化(c)和P型AlGaAs层厚度变化(d)对阵列阴极发射电流效率的影响. 其中光注入入射光角度为20°. (a)和(c)中T_p = 0.1 μm, (b)和(d)中T_cp = 0.2 μm, (a), (b), (c), (d)中阵列阴极N_a, N_d, T_n和T_cn分别为5×10¹⁸ cm^–3, 1×10¹⁸ cm^–3, 0.3 μm和1.0 μm

Figure 5. (a) The effect of the thickness change of P-band gap AlGaAs layer on the emission current efficiency of array cathode during optical injection; (b) the effect of thickness variation of P-type AlGaAs layer on emission current efficiency of array cathode during optical injection; (c) the effect of p-gap AlGaAs layer thickness variation on emission current efficiency of array cathode during electric injection; (d) the effect of thickness variation of P-type AlGaAs layer on emission current efficiency of array cathode during electric injection. The light injection angle is 20°. T_p is 0.1 μm in Figure (a) and Figure (c), T_cp is 0.2 μm in Figure (b) and Figure (d), and array cathode N_a, N_d, T_n and T_cn are 5×10¹⁸ cm^–3, 1×10¹⁸ cm^–3, 0.3 μm and 1.0 μm in Figure (a), (b), (c) and (d), respectively.

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图 6 光注入时N型AlGaAs层厚度的变化对阵列阴极发射电流效率(a)和阵列阴极发射电流效率(b)的影响; 电注入时N型AlGaAs层厚度的变化对阵列阴极发射电流效率(c)和阵列阴极发射电流效率(d)的影响. 其中光注入入射光角度为20°, (a)和(c)中T_cn= 1 μm, (b)和(d)中T_cp= 0.3 μm, (a), (b), (c)和(d)中阵列阴极N_a, N_d, T_cp和T_p分别为5×10¹⁸ cm^–3, 1×10¹⁸ cm^–3, 0.2 μm和0.1 μm

Figure 6. (a) The effect of thickness variation of N-type AlGaAs layer on emission current efficiency of array cathode during optical injection; (b) effect of the thickness of N-type variable band gap AlGaAs layer on the emission current efficiency of array cathode during optical injection; (c) the effect of thickness variation of N-type AlGaAs layer on emission current efficiency of array cathode during electric injection; (d) the effect of the thickness of N-type variable band gap AlGaAs layer on the emission current efficiency of array cathode during electric injection. The light injection angle is 20°, T_cn is 1 μm in Figure (a) and Figure (c), T_cp is 0.3 μm in Figure (b) and Figure (d), and array cathode N_a, N_d, T_cpand T_p are 5×10¹⁸ cm^–3, 1×10¹⁸ cm^–3, 0.2 μm and 0.1 μm in Figure (a), (b), (c) and (d), respectively.

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图 7 (a) 光注入时P型AlGaAs层和P型变带隙AlGaAs层掺杂浓度N_a变化对阵列阴极发射电流效率的影响; (b) 电注入时P型AlGaAs层和P型变带隙AlGaAs层掺杂浓度N_a的变化对阵列阴极发射电流效率的影响. 其中光注入入射光角度为20º, 阵列阴极N_d, T_cp, T_p, T_n和T_cn分别为1 × 10¹⁸ cm^–3, 0.2 μm, 0.1 μm, 0.3 μm和1.0 μm

Figure 7. (a) The effect of doping concentration N_a of P-type AlGaAs layer and P-type bandgap AlGaAs layer on emission current efficiency of array cathode during optical injection; (b) the effect of doping concentration N_a of P-type AlGaAs layer and P-type bandgap AlGaAs layer on emission current efficiency of array cathode during electric injection. Incidence angle of optical injection is 20°, and the array cathode N_d, T_cp, T_p, T_n and T_cn are 1 × 10¹⁸ cm^–3, 0.2 μm, 0.1 μm, 0.3 μm and 1.0 μm, respectively.

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图 8 (a) 光注入时N型变带隙AlGaAs层和N-AlGaAs层掺杂浓度N_d变化对阵列阴极发射电流效率的影响; (b) 电注入时N型变带隙AlGaAs层和N-AlGaAs层掺杂浓度N_d的变化对阵列阴极发射电流效率的影响. 光注入入射光角度为20°, 阵列阴极N_a, T_cp, T_p, T_n和T_cn分别为5 × 10¹⁸ cm^–3, 0.2 μm, 0.1 μm, 0.3 μm和1.0 μm

Figure 8. (a) Effect of doping concentration N_d variation of N-type bandgap AlGaAs layer and N-AlGaAs layer on emission current efficiency of array cathode during optical injection; (b) the effect of doping concentration N_d of N-type variable band gap AlGaAs layer and N-AlGaAs layer on emission current efficiency of array cathode during electric injection. Incidence angle of optical injection is 20°, and the array cathode N_a, T_cp, T_p, T_n and T_cn are 5 × 10¹⁸ cm^–3, 0.2 μm, 0.1 μm, 0.3 μm and 1.0 μm, respectively.

DownLoad: Full-Size Img PowerPoint

[1]	Tsentalovich E, Barkhuff D, Chen J, Dodson G, Farkhondeh M, Franklin W, Ihloff E, Kaertner F, Tschalaer C, Yang B, Zwart T 2007 Nucl. Instrum. Methods Phys. Res., Sect. A 582 413 Google Scholar
[2]	Benson S V, Douglas D, Neil G R, Shinn M D 2011 J. Phys. Conf. Ser. 299 012014 Google Scholar
[3]	Liu W, Chen Y Q, Lu W T, Moy A, Poelker M, Stutzman M, Zhang S K 2016 Appl. Phys. Lett. 109 252104 Google Scholar
[4]	Yamamoto N, Yamamoto M, Kuwahara M, Sakai R, Morino T, Tamagaki K, Mano A, Utsu A, Okumi S, Nakanishi T, Kuriki M, Bo C, Ujihara T, Takeda Y 2007 J. Appl. Phys. 102 024904 Google Scholar
[5]	Pierce D T, Meier F 1976 Phys. Rev. B 13 5484 Google Scholar
[6]	滕利华, 牟丽君 2017 物理学报 66 046802 Google Scholar Teng L H, Mu L J 2017 Acta Phys. Sin. 66 046802 Google Scholar
[7]	Su C Y, Spicer W E, Lindau I 1983 J. Appl. Phys. 54 1413 Google Scholar
[8]	Cultrera L, Galdi A, Bae J K, Ikponmwen F, Maxson J, Bazarov I 2020 Phys. Rev. Accel. Beams 23 023401 Google Scholar
[9]	Machuca F, Liu Z, Sun Y, Pianetta P, Spicer W E, Pease R F W 2003 J. Vac. Sci. Technol. B 21 1863 Google Scholar
[10]	Maruyama T, Brachmann A, Clendenin J E, Desikan T, Garwin E L, Kirby R E, Luh D A, Turner J, Prepost R 2002 Nucl. Instrum. Methods Phys. Res. Sect. A 492 199 Google Scholar
[11]	李晓峰 2001 博士学位论文 (西安: 中国科学院西安光学精密机械研究所) Li X F 2001 Ph. D. Dissertation (Xi’an: Xi’an Institute of Optical and Precision Mechanics, Chinese Academy of Sciences) (in Chinese)
[12]	Zhang Q, Bai X F, Cheng H C, Jiao G C, Li Z K, Han K, Li Q 2022 Acta Photonica Sin. 51 0304005 Google Scholar
[13]	Liu L, Lu F F, Tian J, Zhangyang X Y, Lv Z S 2020 J. Mater. Sci. Technol. 58 86 Google Scholar
[14]	邓文娟, 彭新村, 邹继军, 江少涛, 郭栋, 张益军, 常本康 2014 物理学报 63 167902 Google Scholar Deng W J, Peng X C, Zou J J, Jiang S T, Guo D, Zhang Y J, Chang B K 2014 Acta Phys. Sin. 63 167902 Google Scholar
[15]	邹继军, 高频, 杨智, 常本康 2008 光子学报 37 1112 Zou J J, Gao P, Yang Z, Chang B K 2008 Acta Photonica Sin. 37 1112
[16]	Xia S, Liu L, Kong Y K 2016 Opt. Quantum Electron. 48 306 Google Scholar
[17]	张涛 2018 电子世界 15 65 Zhang T 2018 Electron. World 15 65
[18]	曾梦丝, 彭新村 2018 光学仪器 40 67 Zeng M S, Peng X C 2018 Opt. Instrum. 40 67
[19]	邹继军, 张益军, 杨智, 常本康 2011 物理学报 60 017902 Google Scholar Zou J J, Zhang Y J, Yang Z, Chang B K 2011 Acta Phys. Sin. 60 017902 Google Scholar
[20]	Xia J Y, Zou J J, Peng X C, Deng W J, Zhang Y J 2020 Ultramicroscopy 219 113121 Google Scholar
[21]	Ding X J, Ge X W, Zou J J, Zhang Y J, Peng X C, Deng W J, Chen Z P, Zhao W J, Chang B K 2016 Opt. Commun. 367 149 Google Scholar

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