3 基底上PZT铁电薄膜从单斜r相转变为c相.在实验上,采用扫描探针显微镜通过对PZT薄膜施加不同的极化电场来研究了它的电畴翻转.从得到的压电响应相图可以看出,绝大多数的电畴是清晰可"/>         3 substrate. On the other hand,the domain switching of PZT thin film is investigated experimentally by scanning probe microscopy(SPM) via varying the applied polarizing electric field. The piezo-phase images reveal that most ferroelectric domains are clearly detectable. In the r phase,the domains can be reversed into the direction of polarization of the c phase,when the applied electric field increases to 200 kV/cm,which is close to the theoretical value (186 kV/cm)."/>     外加电场对铁电薄膜相变的影响
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物理学报  2010, Vol. 59 Issue (11): 8167-8171
凝聚物质:电子结构、电学、磁学和光学性质 当期目录| 下期目录| 过刊浏览| 高级检索     
外加电场对铁电薄膜相变的影响
梁晓琳1, 刘志壮1, 吕业刚2, 龚跃球3, 郑学军3
(1)湖南科技学院电子工程系,永州 425100; (2)湖南科技学院电子工程系,永州 425100;湘潭大学材料与光电物理学院,湘潭 411105; (3)湘潭大学材料与光电物理学院,湘潭 411105
Effect of external electric field on phase transitions of ferroelectric thin films
Gong Yue-Qiu1, Zheng Xue-Jun1, Liang Xiao-Lin2, Liu Zhi-Zhuang2, Lü Ye-Gang3
(1)Faculty of Material and Photoelectronic Physics,Xiangtan University,Xiangtan 411105,China; (2)Hunan University of Science and Engineering,Yongzhou 425100,China; (3)Hunan University of Science and Engineering,Yongzhou 425100,China;Faculty of Material and Photoelectronic Physics,Xiangtan University,Xiangtan 411105,China

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