Observations on subband electron properties in In<sub>0.65</sub>Ga<sub>0.35</sub>As/In<sub>0.52</sub>Al<sub>0.48</sub>As MM-HEMT with Si <i>δ</i>-doped on the barriers
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Acta Phys. Sin.  2007, Vol. 56 Issue (7): 4143-4147    
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search  |   
Observations on subband electron properties in In0.65Ga0.35As/In0.52Al0.48As MM-HEMT with Si δ-doped on the barriers
Cui Li-Jie1, Gao Hong-Ling1, Li Dong-Lin1, Lin Tie2, Shang Li-Yan2, Huang Zhi-Ming2, Zhu Bo2, Guo Shao-Ling2, Gui Yong-Sheng2, Zhou Wen-Zheng3, Chu Jun-Hao4
(1)中国科学院半导体研究所,北京 100083; (2)中国科学院上海技术物理研究所红外物理国家重点实验室,上海 200083; (3)中国科学院上海技术物理研究所红外物理国家重点实验室,上海 200083;广西大学物理科学与工程技术学院,南宁 530004; (4)中国科学院上海技术物理研究所红外物理国家重点实验室,上海 200083;华东师范大学ECNU-SITP成像信息联合实验室,上海 200062
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