[1] Wang X D, Summers C J, Wang Z L 2004 Nano Lett. 4 423
[2] Sun H, Zhang Q F, Wu J L 2007 Acta Phys. Sin. 56 3479(in Chinese) [孙晖, 张琦峰, 吴锦雷 2007 物理学报 56 3479]
[3] Huang M, Mao S, Feick H, Yan H, Wu Y, Kind H, Weber E, Russo R, Yang P 2001 Sci. 292 1897
[4] Liu R B, Zou B S 2011 Chin. Phys. B 20 047104
[5] Yu C, Hao, Q, Saha S, Shi L, Yang X, Wang Z L 2005 Appl. Phys. Lett. 86 063101
[6] Das S N, Moon K J, Kar J P, Choi J H, Xiong J J 2010 Appl. Phys. Lett. 97 022103
[7] Wei M, Deng H, Wang P L, Li Y 2007 Mater Rev. 21 1 (in Chinese) [韦敏, 邓宏, 王培利, 李阳 2007 材料导报 21 1]
[8] Liu Y Y, Yuan Y Z, Li J, Gao X T 2007 Mater Rev. 21 9 (in Chinese) [刘云燕, 袁玉珍, 李洁, 高绪团 2007 材料导报 21 9]
[9] Song Z M, Zhao D X, Guo Z, Li B H, Zhang Z Z, Shen D Z 2012 Acta Phys. Sin. 61 052901(in Chinese) [宋志明, 赵东旭, 郭振, 李炳辉, 张振中, 申德振 2012 物理学报 61 052901]
[10] Inamdar S I, Rajpure K Y 2014 J. Alloys Compd. 595 55
[11] Xu Q A, Zhang J W, Ju K R, Yang X D, Hou X 2006 J. Cryst. Growth 289 44
[12] Panda S K, Jacob C 2012 Solid-State Electron. 73 44
[13] Kind H, Yan H, Messer B, Law M, Yang P 2002 Adv. Mater. 14 158
[14] Li Y, Feng S W, Sun J Y, Xie X S, Yang J, Zhang Y Z, Lu Y C 2006 2006 8th International Conference on Solid-State and Integrated Circuit Technology ProceedingsShanghai, 23-26 Oct. 2006, 947
[15] Ma Y 2004 Ph. D. Dissertation (Chongqing: Chongqing University) (in Chinese) [马勇 2004 博士学位论文 (重庆: 重庆大学)]
[16] He Y, Zhang W, Zhang S, Kang X, Peng W, Xu Y 2012 Sens. Actuators A 181 6
[17] Zhao X L, Kang X, Chen L, Zhang Z B, Liu J L, Ouyang X P, Peng W B, He Y N 2014 Acta Phys. Sin. 63 098502(in Chinese) [赵小龙, 康雪, 陈亮, 张忠兵, 刘金良, 欧阳晓平, 彭文博, 贺永宁 2014 物理学报 63 098502]
[18] Peng W, He Y, Zhao X, Liu H, Kang X, Wen C 2013 J. Micromech. Microeng. 23 125008