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摘要: 本文用配位场方法计算在D2d)晶场作用下,V3X(X=Si,Ga,Ge,Sb,Sn)超导化合物中d电子各态的附加势能,给出A-15超导化合物d带相对移动模型中的特征量——d子带相对移动量△E⊥——与晶格常数的解析关系及其数值结果。并用于磁化率的计算。
Abstract: By employing the method of ligand field theory, we calculated the additional potential energies of d electron states of V3X(X = Si, Ga, Ge, Sb, Sn) superconducting compounds, these energies are induced by the D2d) crystal field. We obtained the analytic relation between the. lattice constant and the relative displacement of d sublevels △E⊥, which is the characteristic quantity for the model of d band relative displacement. The numerical values of △E⊥ and the magnetic susceptibilities calculated by using them are also presented.