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物理学报. 1983, 32(3): 411-416.
doi: 10.7498/aps.32.411.
V3X系d带相对移动量的配位场方法的计算
- 收稿日期: 1982-04-09
- 刊出日期: 2005-07-21
摘要: 本文用配位场方法计算在D2d)晶场作用下,V3X(X=Si,Ga,Ge,Sb,Sn)超导化合物中d电子各态的附加势能,给出A-15超导化合物d带相对移动模型中的特征量——d子带相对移动量△E⊥——与晶格常数的解析关系及其数值结果。并用于磁化率的计算。
English Abstract
LIGAND FIELD CALCULATION OF THE RELATIVE DISPLACEMENTS OF THE d BAND IN V3X SYSTEM
- Received Date:
09 April 1982
- Published Online:
21 July 2005
Abstract: By employing the method of ligand field theory, we calculated the additional potential energies of d electron states of V3X(X = Si, Ga, Ge, Sb, Sn) superconducting compounds, these energies are induced by the D2d) crystal field. We obtained the analytic relation between the. lattice constant and the relative displacement of d sublevels △E⊥, which is the characteristic quantity for the model of d band relative displacement. The numerical values of △E⊥ and the magnetic susceptibilities calculated by using them are also presented.
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