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中国物理学会期刊

表面电荷与体陷阱对GaN基HEMT器件热电子和量子效应的影响研究

CSTR: 32037.14.aps.59.2746

Static surface states and bulk traps in AlGaN/GaN HEMT including hot electron and quantum effects

CSTR: 32037.14.aps.59.2746
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  • 研究了GaN基HEMT器件表面电荷和体陷阱的变化对输出特性的影响.通过分析表面电荷与体陷阱对电流坍塌效应、饱和电流和膝点电压的影响,初步确定了其变化关系.研究结果显示表面电荷的增加能够耗尽二维电子气,减弱电流坍塌效应,降低饱和电流,使膝点电压非正常后移.同时,体陷阱的减小可以有效减弱电流坍塌效应,增大饱和电流,且膝点电压基本保持不变.晶格温度较低时,热电子效应和量子隧穿效应对电流坍塌效应影响显著.采用流体动力学模型,分析了引起电流坍塌效应的内在物理机制,并获得了器件设计和制备的优化方案.

     

    The effects of static surface states and bulk traps on output characteristics have been studied. The effects of surface charge and bulk traps on current collapse, saturation current and knee voltage are investigated, and their relationships have been determined. The results show that the increase of the surface charge can exhaust the two-dimensional electron gas, and reduce the current collapse effect and saturation current, inducing the abnormal shift of the knee voltage. At the same time, reducing the bulk traps can alleviate the current collapse effect and increase the saturation current with the slight change of the knee voltage. At low lattice temperature, the hot electron effect and quantum tunneling effect play an important role in the current collapse. By using the hydrodynamics model, possible physical mechanisms are discussed, and an approach is proposed to reduce the effects of the static surface states and bulk traps on the output characteristics.

     

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