-
研究了GaN基HEMT器件表面电荷和体陷阱的变化对输出特性的影响.通过分析表面电荷与体陷阱对电流坍塌效应、饱和电流和膝点电压的影响,初步确定了其变化关系.研究结果显示表面电荷的增加能够耗尽二维电子气,减弱电流坍塌效应,降低饱和电流,使膝点电压非正常后移.同时,体陷阱的减小可以有效减弱电流坍塌效应,增大饱和电流,且膝点电压基本保持不变.晶格温度较低时,热电子效应和量子隧穿效应对电流坍塌效应影响显著.采用流体动力学模型,分析了引起电流坍塌效应的内在物理机制,并获得了器件设计和制备的优化方案.
-
关键词:
- GaN-HEMT器件 /
- 电流坍塌效应 /
- 热电子效应 /
- 表面电荷
[1] [1]Gu W P, Hao Y, Zhang J C, Wang C, Feng Q, Ma X H 2009 Acta Phys. Sin. 58 511 (in Chinese) [谷文萍、郝跃、张进城、王冲、冯倩、马晓华 2009 物理学报 58 511]
[2] [2]Hu W D, Chen X S, Quan Z J, Zhang M X, Huang Y, Xia C S, Lu W, Ye D P 2007 J. Appl. Phys. 102 034502
[3] [3]Zhou Z T, Guo L W, Xing Z G, Ding G J, Tan C L, Lü L, Liu J, Liu X Y, Jia H Q, Chen H, Zhou J M 2007 Acta Phys. Sin. 56 6013 (in Chinese) [周忠堂、郭丽伟、邢志刚、丁国建、谭长林、吕力、刘建、刘新宇、贾海强、陈弘、周均铭 2007 物理学报 56 6013]
[4] [4]Hu W D, Chen X S, Quan Z J, Xia S C, Lu W, Yuan H J 2006 Appl. Phys. Lett. 89 243501
[5] [5]Hu W D, Chen X S, Quan Z J, Xia S C, Lu W, Ye P D 2006 J. Appl. Phys. 100 074501
[6] [6]Xi G Y, Ren F, Hao Z B, Wang L, Li H T, Jiang Y, Zhao W H, Yan J, Luo Y 2008 Acta Phys. Sin. 57 7238 (in Chinese) [席光义、任凡、郝智彪、汪莱、李洪涛、江洋、赵维韩、彦军、罗毅 2008 物理学报 57 7238]
[7] [7]Simin G, Yang J Z, Koudymov A, Adivarahan V, Yang J, Khan M A 2006 Appl. Phys. Lett. 89 033510
[8] [8]Hu W D, Chen X S, Zhou X C, Quan Z J, Lu W 2006 Microelectron. J. 37 613
[9] [9]Xia C S, Hu W D, Wang C, Li Z F, Chen X S, Lu W, Simon Li Z M, Li Z Q 2006 Opt. Quant. Electron. 38 1077
[10] ]Wang C, Quan S, Zhang J F, Hao Y, Feng Q, Chen J F 2009 Acta Phys. Sin. 58 1966 (in Chinese) [王冲、全思、张金凤、郝跃、冯倩、陈军峰 2009 物理学报 58 1966]
[11] ]Qiao H, Liao Y, Hu W D, Deng Y, Yuan Y G, Zhang Q Y, Li X Y, Gong H M 2008 Acta Phys. Sin. 57 7088 (in Chinese) [乔辉、廖毅、胡伟达、邓屹、袁永刚、张勤耀、李向阳、龚海梅 2008 物理学报 57 7088]
[12] ]Yin F, Hu W D, Quan Z J, Zhang B, Hu X N, Li Z F, Chen X S, Lu W 2009 Acta Phys. Sin. 58 7884(in Chinese) [殷菲、胡伟达、全知觉、张波、胡晓宁、李志锋、陈效双、陆卫 2009 物理学报 58 7884]
[13] ]Hu W D, Yin F, Ye Z H, Quan Z J, Hu X N, Li Z F, Chen X S, Lu W 2009 Acta Phys. Sin. 58 7891 (in Chinese) [胡伟达、殷菲、叶振华、全知觉、胡晓宁、李志锋、陈效双、陆卫 2009 物理学报 58 7891]
[14] ]Hu W D, Chen X S, Yin F, Quan Z J, Ye Z H, Hu X N, Li Z F, Lu W 2009 J. Appl. Phys. 105 104502
[15] ]Braga N, Mickevicius R, Gaska R, Hu X, Shur M S, Asif K M, Simin G, Yang J 2004 J. Appl. Phys. 95 6409
[16] ]Hasegawa H, Inagaki T, Ootomo S 2003 J. Vac. Sci. Technol. 21 1844
[17] ]Meneghesso G, Verzellesi G, Pierobon R, Rampazzo F, Chini A, Mishra U K, Canali C, Zanoni E 2004 IEEE Trans. Electron Devices 51 1554
[18] ]Feng Q, Hao Y, Yue Y Z 2008 Acta Phys. Sin. 57 1886 (in Chinese) [冯倩、郝跃、岳远征 2008 物理学报 57 1886]
[19] ]Hu W D, Chen X S, Yin F, Zhang J B, Lu W 2009 J. Appl. Phys. 105 084502
[20] ]Gu W P, Zhang J C, Wang C, Feng Q, Ma X H, Hao Y 2009 Acta Phys. Sin. 58 1161 (in Chinese) [谷文萍、张进城、王冲、冯倩、马晓华、郝跃 2009 物理学报 58 1161]
[21] ]Liu L J, Yue Y Z, Zhang J C, Ma X H, Dong Z D, Hao Y 2009 Acta Phys. Sin. 58 536 (in Chinese) [刘林杰、岳远征、张进城、马晓华、董作典、郝跃 2009 物理学报 58 536]
[22] ]Gaska R, Bykhovski A D, Shur M S 1998 Appl. Phys. Lett. 73 3577
[23] ]Li Z F, Lu W, Shen S C, Holland S, Hu C M, Heitmann D, Shen B, Zhang Y D 2002 Appl. Phys. Lett. 80 431
[24] ]Faraclas E W, Anwar A F M 2006 Solid-State Electron. 50 1051
[25] ]Wells A M, Uren M J, Balmer R S, Hilton K P, Martin T, Missous M 2005 Solid-State Electron. 49 279
[26] ]Wei W, Lin R B, Feng Q, Hao Y 2008 Acta Phys. Sin. 57 0467 (in Chinese) [魏巍、林若兵、冯倩、郝跃 2008 物理学报 57 0467]
[27] ]Hu W D, Chen X S, Quan Z J, Zhou X C, Lu W 2006 J. Infrared Millim. Waves 25 90 (in Chinese) [胡伟达、陈效双、全知觉、周旭昌、陆卫 2006 红外与毫米波学报 58 90]
[28] ]Gaska R, Osinsky A, Yang J W, Shur M S 1998 IEEE Electr. Device Lett. 19 89
-
[1] [1]Gu W P, Hao Y, Zhang J C, Wang C, Feng Q, Ma X H 2009 Acta Phys. Sin. 58 511 (in Chinese) [谷文萍、郝跃、张进城、王冲、冯倩、马晓华 2009 物理学报 58 511]
[2] [2]Hu W D, Chen X S, Quan Z J, Zhang M X, Huang Y, Xia C S, Lu W, Ye D P 2007 J. Appl. Phys. 102 034502
[3] [3]Zhou Z T, Guo L W, Xing Z G, Ding G J, Tan C L, Lü L, Liu J, Liu X Y, Jia H Q, Chen H, Zhou J M 2007 Acta Phys. Sin. 56 6013 (in Chinese) [周忠堂、郭丽伟、邢志刚、丁国建、谭长林、吕力、刘建、刘新宇、贾海强、陈弘、周均铭 2007 物理学报 56 6013]
[4] [4]Hu W D, Chen X S, Quan Z J, Xia S C, Lu W, Yuan H J 2006 Appl. Phys. Lett. 89 243501
[5] [5]Hu W D, Chen X S, Quan Z J, Xia S C, Lu W, Ye P D 2006 J. Appl. Phys. 100 074501
[6] [6]Xi G Y, Ren F, Hao Z B, Wang L, Li H T, Jiang Y, Zhao W H, Yan J, Luo Y 2008 Acta Phys. Sin. 57 7238 (in Chinese) [席光义、任凡、郝智彪、汪莱、李洪涛、江洋、赵维韩、彦军、罗毅 2008 物理学报 57 7238]
[7] [7]Simin G, Yang J Z, Koudymov A, Adivarahan V, Yang J, Khan M A 2006 Appl. Phys. Lett. 89 033510
[8] [8]Hu W D, Chen X S, Zhou X C, Quan Z J, Lu W 2006 Microelectron. J. 37 613
[9] [9]Xia C S, Hu W D, Wang C, Li Z F, Chen X S, Lu W, Simon Li Z M, Li Z Q 2006 Opt. Quant. Electron. 38 1077
[10] ]Wang C, Quan S, Zhang J F, Hao Y, Feng Q, Chen J F 2009 Acta Phys. Sin. 58 1966 (in Chinese) [王冲、全思、张金凤、郝跃、冯倩、陈军峰 2009 物理学报 58 1966]
[11] ]Qiao H, Liao Y, Hu W D, Deng Y, Yuan Y G, Zhang Q Y, Li X Y, Gong H M 2008 Acta Phys. Sin. 57 7088 (in Chinese) [乔辉、廖毅、胡伟达、邓屹、袁永刚、张勤耀、李向阳、龚海梅 2008 物理学报 57 7088]
[12] ]Yin F, Hu W D, Quan Z J, Zhang B, Hu X N, Li Z F, Chen X S, Lu W 2009 Acta Phys. Sin. 58 7884(in Chinese) [殷菲、胡伟达、全知觉、张波、胡晓宁、李志锋、陈效双、陆卫 2009 物理学报 58 7884]
[13] ]Hu W D, Yin F, Ye Z H, Quan Z J, Hu X N, Li Z F, Chen X S, Lu W 2009 Acta Phys. Sin. 58 7891 (in Chinese) [胡伟达、殷菲、叶振华、全知觉、胡晓宁、李志锋、陈效双、陆卫 2009 物理学报 58 7891]
[14] ]Hu W D, Chen X S, Yin F, Quan Z J, Ye Z H, Hu X N, Li Z F, Lu W 2009 J. Appl. Phys. 105 104502
[15] ]Braga N, Mickevicius R, Gaska R, Hu X, Shur M S, Asif K M, Simin G, Yang J 2004 J. Appl. Phys. 95 6409
[16] ]Hasegawa H, Inagaki T, Ootomo S 2003 J. Vac. Sci. Technol. 21 1844
[17] ]Meneghesso G, Verzellesi G, Pierobon R, Rampazzo F, Chini A, Mishra U K, Canali C, Zanoni E 2004 IEEE Trans. Electron Devices 51 1554
[18] ]Feng Q, Hao Y, Yue Y Z 2008 Acta Phys. Sin. 57 1886 (in Chinese) [冯倩、郝跃、岳远征 2008 物理学报 57 1886]
[19] ]Hu W D, Chen X S, Yin F, Zhang J B, Lu W 2009 J. Appl. Phys. 105 084502
[20] ]Gu W P, Zhang J C, Wang C, Feng Q, Ma X H, Hao Y 2009 Acta Phys. Sin. 58 1161 (in Chinese) [谷文萍、张进城、王冲、冯倩、马晓华、郝跃 2009 物理学报 58 1161]
[21] ]Liu L J, Yue Y Z, Zhang J C, Ma X H, Dong Z D, Hao Y 2009 Acta Phys. Sin. 58 536 (in Chinese) [刘林杰、岳远征、张进城、马晓华、董作典、郝跃 2009 物理学报 58 536]
[22] ]Gaska R, Bykhovski A D, Shur M S 1998 Appl. Phys. Lett. 73 3577
[23] ]Li Z F, Lu W, Shen S C, Holland S, Hu C M, Heitmann D, Shen B, Zhang Y D 2002 Appl. Phys. Lett. 80 431
[24] ]Faraclas E W, Anwar A F M 2006 Solid-State Electron. 50 1051
[25] ]Wells A M, Uren M J, Balmer R S, Hilton K P, Martin T, Missous M 2005 Solid-State Electron. 49 279
[26] ]Wei W, Lin R B, Feng Q, Hao Y 2008 Acta Phys. Sin. 57 0467 (in Chinese) [魏巍、林若兵、冯倩、郝跃 2008 物理学报 57 0467]
[27] ]Hu W D, Chen X S, Quan Z J, Zhou X C, Lu W 2006 J. Infrared Millim. Waves 25 90 (in Chinese) [胡伟达、陈效双、全知觉、周旭昌、陆卫 2006 红外与毫米波学报 58 90]
[28] ]Gaska R, Osinsky A, Yang J W, Shur M S 1998 IEEE Electr. Device Lett. 19 89
引用本文: |
Citation: |
计量
- 文章访问数: 5083
- PDF下载量: 1794
- 被引次数: 0