-
[1] Yu P,Tang Z K,Wong G K L, Kawasaki M, Ohtomo A, Koinuma H, Seqawa Y 1996 23nd Int Conf on the Physics of Semiconductors, World Scientific, Singapore, 1996 p1453
[2] Sun C W, Liu Z W, Zhang Q Y 2006 Acta Phys. Sin. 55 430 (in Chinese) [孙成伟、 刘志文、 张庆瑜 2006 物理学报 55 0430]
[3] Liu Z W, Gu J F, Sun C W, Zhang Q Y 2006 Acta Phys. Sin. 55 1965 (in Chinese) [刘志文、 谷建峰、 孙成伟、 张庆瑜 2006物理学报 55 1965]
[4] Sun C W, Xin P, Liu Z W, Zhang Q Y 2006 Appl. Phys. Lett. 88 221914
[5] Liu Z W, Sun C W, Gu J F, Zhang Q Y 2006 Appl. Phys. Lett. 88 251911
[6] Xin P, Sun C W, Qin F W, Wen S P, Zhang Q Y 2007 Acta Phys. Sin. 56 1082 (in Chinese) [辛 萍、 孙成伟、 秦福文、 文胜平、 张庆瑜 2007物理学报 56 1082]
[7] Liu Z W, Fu W J, Liu M, Gu J F, Ma C Y, Zhang Q Y 2008 Surface and Coatings Technology 202 5410
[8] zgür V, Alivov Ya I, Liu C, Teke A, Reshchikov M, Dogan S, Avrutin V, Cho S J, Markoc H 2005 J. Appl. Phys. 98 041301
[9] Tang X, Lü H F, Ma C Y, Zhao J J, Zhang Q Y 2008 Acta Phys. Sin. 57 7806 (in Chinese) [唐 鑫、 吕海峰、 马春雨、 赵纪军、 张庆瑜 2008 物理学报 57 7806]
[10] Tang X,Lü H F, Ma C Y, Zhao J J, Zhang Q Y 2008 Acta Phys. Sin. 57 1066 (in Chinese) [唐 鑫、 吕海峰、 马春雨、 赵纪军、 张庆瑜 2008 物理学报 57 1066]
[11] Fan X F, Sun H D, Shen Z X, Kuo J L, Lu Y M 2008 J. Phys.: Condens. Matter 20 235221
[12] Sun C W, Xin P, Ma C Y, Liu Z W, Zhang Q Y 2006 Appl. Phys. Lett. 89 181923
[13] Gruber Th, Kirchner C, Kling R, Gruber Th, Reuss F, Kichner C, Waag A, Kling R 2003 Appl. Phys. Lett. 83 3290
[14] Bertram F, Giemsch S, Forster D, Christen J, Kling R, Kirchner C, Waag A 2006 Appl. Phys. Lett. 88 061915
[15] Hohenberg P, Kohn W 1964 Phys. Rev. B 36 864
[16] Kresse G, Joubert D 1999 Phys. Rev. B 59 1758
[17] Adolph B, Furthmuller J, Bechstedt F 2001 Phys. Rev. B 63 125108
[18] Blochl P E 1994 Phys. Rev. B 50 17953
[19] Kresse G, Furthmuller J 1996 Phys. Rev. B 54 11169
[20] Hoherberg P, Kohn W 1964 Phys. Rev. B 36 864
[21] Kohn W, Sham L J 1965 Phys. Rev. A 140 1133
[22] Decremps F, Dathi F, Poloan A, Saitta A M, Pasearelli S, Di Cicco A, Itie J P, Baudelet F 2003 Phys. Rev. B 68 104101
[23] Jaffe J E, Snyder J A, Lin Z, Hess A C 2000 Phys. Rev. B 62 1660
[24] Oshilciri M, Aryasetiawan F 2004 Phys. Rev. B 70 054104
[25] Ashrafi A B M A, Ueta A, Avramescu A, Kumano H, Suemune I 2000 Appl. Phys. Lett. 76 550
[26] Guerrero-Moreno R J, Takeuchi N 2002 Phys. Rev. B 66 205205
[27] Sun H Q, Ding S F, Wang Y T, Deng B, Fan G H 2008 Acta Phys.-Chim. Sin. 24 1233 (in Chinese) [孙慧卿、 丁少峰、 王雨田、 邓 贝、 范广涵 2008物理化学学报 24 1233 ]
[28] Chen X H, Kang J Y 2008 Semicond. Sci. Technol. 23 025008
[29] Sanati M, Hart G L W, Zunger Alex 2003 Phys. Rev. B 68 125108
[30] Tang X,LU H F, Zhao J J, Zhang Q Y 2010 J. Physics and Chemistry of Solids 71 336
[31] Janotti A, Segev D, Van de Walle C G 2006 Phys. Rev. B 74 45202
[32] Zúiga-Pérez J, Muoz-Sanjosé V, Lorenz M, Benndorf G, Heitsch S, Spemann D, Grundmann M 2006 J. Appl. Phys. 99 023514
[33] Ishihara J, Nakamura A, Shigemori A, Aoki T, Temmyo J 2006 Appl. Phys. Lett. 89 091914
-
[1] Yu P,Tang Z K,Wong G K L, Kawasaki M, Ohtomo A, Koinuma H, Seqawa Y 1996 23nd Int Conf on the Physics of Semiconductors, World Scientific, Singapore, 1996 p1453
[2] Sun C W, Liu Z W, Zhang Q Y 2006 Acta Phys. Sin. 55 430 (in Chinese) [孙成伟、 刘志文、 张庆瑜 2006 物理学报 55 0430]
[3] Liu Z W, Gu J F, Sun C W, Zhang Q Y 2006 Acta Phys. Sin. 55 1965 (in Chinese) [刘志文、 谷建峰、 孙成伟、 张庆瑜 2006物理学报 55 1965]
[4] Sun C W, Xin P, Liu Z W, Zhang Q Y 2006 Appl. Phys. Lett. 88 221914
[5] Liu Z W, Sun C W, Gu J F, Zhang Q Y 2006 Appl. Phys. Lett. 88 251911
[6] Xin P, Sun C W, Qin F W, Wen S P, Zhang Q Y 2007 Acta Phys. Sin. 56 1082 (in Chinese) [辛 萍、 孙成伟、 秦福文、 文胜平、 张庆瑜 2007物理学报 56 1082]
[7] Liu Z W, Fu W J, Liu M, Gu J F, Ma C Y, Zhang Q Y 2008 Surface and Coatings Technology 202 5410
[8] zgür V, Alivov Ya I, Liu C, Teke A, Reshchikov M, Dogan S, Avrutin V, Cho S J, Markoc H 2005 J. Appl. Phys. 98 041301
[9] Tang X, Lü H F, Ma C Y, Zhao J J, Zhang Q Y 2008 Acta Phys. Sin. 57 7806 (in Chinese) [唐 鑫、 吕海峰、 马春雨、 赵纪军、 张庆瑜 2008 物理学报 57 7806]
[10] Tang X,Lü H F, Ma C Y, Zhao J J, Zhang Q Y 2008 Acta Phys. Sin. 57 1066 (in Chinese) [唐 鑫、 吕海峰、 马春雨、 赵纪军、 张庆瑜 2008 物理学报 57 1066]
[11] Fan X F, Sun H D, Shen Z X, Kuo J L, Lu Y M 2008 J. Phys.: Condens. Matter 20 235221
[12] Sun C W, Xin P, Ma C Y, Liu Z W, Zhang Q Y 2006 Appl. Phys. Lett. 89 181923
[13] Gruber Th, Kirchner C, Kling R, Gruber Th, Reuss F, Kichner C, Waag A, Kling R 2003 Appl. Phys. Lett. 83 3290
[14] Bertram F, Giemsch S, Forster D, Christen J, Kling R, Kirchner C, Waag A 2006 Appl. Phys. Lett. 88 061915
[15] Hohenberg P, Kohn W 1964 Phys. Rev. B 36 864
[16] Kresse G, Joubert D 1999 Phys. Rev. B 59 1758
[17] Adolph B, Furthmuller J, Bechstedt F 2001 Phys. Rev. B 63 125108
[18] Blochl P E 1994 Phys. Rev. B 50 17953
[19] Kresse G, Furthmuller J 1996 Phys. Rev. B 54 11169
[20] Hoherberg P, Kohn W 1964 Phys. Rev. B 36 864
[21] Kohn W, Sham L J 1965 Phys. Rev. A 140 1133
[22] Decremps F, Dathi F, Poloan A, Saitta A M, Pasearelli S, Di Cicco A, Itie J P, Baudelet F 2003 Phys. Rev. B 68 104101
[23] Jaffe J E, Snyder J A, Lin Z, Hess A C 2000 Phys. Rev. B 62 1660
[24] Oshilciri M, Aryasetiawan F 2004 Phys. Rev. B 70 054104
[25] Ashrafi A B M A, Ueta A, Avramescu A, Kumano H, Suemune I 2000 Appl. Phys. Lett. 76 550
[26] Guerrero-Moreno R J, Takeuchi N 2002 Phys. Rev. B 66 205205
[27] Sun H Q, Ding S F, Wang Y T, Deng B, Fan G H 2008 Acta Phys.-Chim. Sin. 24 1233 (in Chinese) [孙慧卿、 丁少峰、 王雨田、 邓 贝、 范广涵 2008物理化学学报 24 1233 ]
[28] Chen X H, Kang J Y 2008 Semicond. Sci. Technol. 23 025008
[29] Sanati M, Hart G L W, Zunger Alex 2003 Phys. Rev. B 68 125108
[30] Tang X,LU H F, Zhao J J, Zhang Q Y 2010 J. Physics and Chemistry of Solids 71 336
[31] Janotti A, Segev D, Van de Walle C G 2006 Phys. Rev. B 74 45202
[32] Zúiga-Pérez J, Muoz-Sanjosé V, Lorenz M, Benndorf G, Heitsch S, Spemann D, Grundmann M 2006 J. Appl. Phys. 99 023514
[33] Ishihara J, Nakamura A, Shigemori A, Aoki T, Temmyo J 2006 Appl. Phys. Lett. 89 091914
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