光伏型碲镉汞探测器在波段内连续激光辐照下的两种不同过饱和现象的产生机理

江天; 程湘爱; 许中杰; 陆启生

doi:10.7498/aps.62.097303

摘要

利用连续波段内激光对两批光伏型碲镉汞探测器进行了激光辐照实验, 发现了两种不同的过饱和现象. 实验表明, 光伏型碲镉汞探测器在强光辐照下都会出现开路电压随光强增强而减小的过饱和现象, 明晰了PV型探测器在强光辐照下的一般规律性现象和由探测器个体差异导致的特殊现象. 从等效电路模型出发, 剖析了两种过饱和现象的发生条件, 建立了数值计算的理论模型, 对两种过饱和现象进行了数值模拟, 计算结果与实验结果符合得较好. 研究表明, 光伏型碲镉汞探测器在波段内强光辐照下引起的过饱和现象有两种产生机理, 一种是热效应引起的暗电流增大机理; 另一种是探测器材料中缺陷引起的漏电流增大机理.

关键词:

Abstract

We have studied two batches of photovoltaic HgCdTe detectors irradiated by CW band-in laser, and discovered, two different over-saturation phenomena. It is shown that the over-saturation phenomenon associated with the open-circle voltage signals which decreases with increasing light intensity is of universal existence in the PV HgCdTe detectors irradiated by intense light. The regular and special phenomena of PV HgCdTe detectors under intense light radiation are definite and obvious. The generation conditions for the two typical over-saturation phenomena are analyzed in terms of the equivalent circuit model. These two kinds of over-saturation phenomena have been numerically simulated. Numerical results are in good agreement with experimental data. It is found that the two generation mechanisms of the over-saturation phenomena of PV detector under irradiation of the above-band gap laser do exist. One is the increasing dark current due to thermal effectm, and the other is the leak current due to the bugs in the detector material.

Keywords:

作者及机构信息

1.
国防科学技术大学, 光电科学与工程学院, 长沙 410073;

2.
光电信息控制和安全技术重点实验室, 三河 065201

基金项目: 国家重点基础研究发展计划(批准号:1030110),湖南省研究生科研创新项目(批准号:CX2011B035)和国防科学技术大学优秀研究生创新资助重点资助项目(批准号:B110705)资助的课题.

Authors and contacts

1.
College of Optoelectric Science and Engineering, National University of Defense Technology, Changsha 410073, China;

2.
Science and Technology on Electro-Optical Information Security Control Laboratory, Sanhe 065201, China

Funds: Project supported by the State Key Development Program for Basic Research of China (Grant No. 1030110), the Hunan Provincial Innovation Foundation for Postgraduate (Grant No. CX2011B035), and the NUDT Innovation Foundation for Postgraduate (Grant No. B110705).

参考文献

[1]	Jiang T, Cheng X A, Zheng X, Xu Z J, Jiang H M, Lu Q S 2012 Acta Phys. Sin. 61 137302 (in Chinese) [江天, 程湘爱, 郑鑫, 江厚满, 陆启生 2012 物理学报 61 137302]
[2]	Zheng X, Jiang T, Cheng X A, Jiang H M, Lu Q S 2012 Acta phys. Sin. 61 047302 (in Chinese) [郑鑫, 江天, 程湘爱, 江厚满, 陆启生 2012 物理学报 61 047302]
[3]	Kuanr A V, Bansal S K, Srivatava G P 1996 Opt. and Laser Technol. 28 345
[4]	Jiang T, Cheng X A, Li L, Jiang H M, Lu Q S 2011 Optics and Spectroscopy 111 162
[5]	Wysoki B T, Marciniak M A 2008 Infrared Phys. Technol. 51 137
[6]	Jiang T, Cheng X A, Zheng X, Jiang H M, Lu Q S 2011 Semicond. Sci. Technol. 26 115004
[7]	Jiang T, Cheng X A, Jiang H M, Lu Q S 2011 Acta phys. Sin. 60 107305 (in Chinese) [江天, 程湘爱, 江厚满, 陆启生 2011 物理学报 60 107305]
[8]	Jiang T, Zheng X, Cheng X A, Xu Z J, Jiang H M, Lu Q S 2012 Semicond. Sci. Technol. 27 015020
[9]	Li X Q, Cheng X A, Wang R 2003 China J. Letter. 30 1070 (in Chinese) [李修乾, 程湘爱, 王睿 2003 中国激光 28 1070]
[10]	Li X Q, Cheng X A, Wang R 2003 High Power Laser and Partial Beams 15 40 (in Chinese) [李修乾, 程湘爱, 王睿 2003 强激光与粒子束 15 40]
[11]	Wang R, Si L, Lu Q S 2003 Laser {& Infrared.} 33 335 (in Chinese) [王睿, 司磊, 陆启生 2003 激光与红外 33 335]
[12]	Ma L Q, Lu Q S, Du S J 2004 China J. Letter. 31 342 (in Chinese) [马丽芹, 陆启生, 杜少军 2004 中国激光 31 342]
[13]	Ma L Q, Lu Q S, 2006 High Power Laser and Partial Beams 18 201 (in Chinese) [马丽芹, 陆启生 2006 强激光与粒子束 18 201]
[14]	Li L, Lu Q S, Jiang H M, Cheng X A 2007 Acts. Opt. Sin. 27 85 (in Chinese) [李莉, 陆启生, 江厚满, 程湘爱 2007 光学学报 27 85]
[15]	Li L, Lu Q S 2008 Acts. Opt. Sin. 28 1953 (in Chinese) [李莉, 陆启生 2008 光学学报 28 1953]
[16]	Jiang T, Zheng X, Cheng X A, Xu Z J, Jiang H M, Lu Q S 2012 J. Infrared Millim. Waves 31 216 (in Chinese) [江天, 郑鑫, 程湘爱, 许中杰, 江厚满, 陆启生 2012 红外与毫米波学报 31 216]
[17]	He Y X, Jiang H M 201 0High Power Laser and Particle Beams 22 2829 (in Chinese) [贺元兴, 江厚满 2010 强激光与粒子束 22 2829]
[18]	Sun C W, Lu Q S, Fan W X, Li W F, Guan J L, Guan C W 2002 Effect of laser irradiation (Beijing: Publishing House of national defence industry ) (in Chinese) p349 [孙承伟, 陆启生, 范正修, 李成福, 关吉利, 关崇文 2002 激光辐照效应 (北京: 国防工业出版社) 第349页]
[19]	Lu Q S, Jiang Z P, Liu Z J 1991 Semicond. Sci. Technol. 6 1039
[20]	Liu E K, Zhu B S, Luo J S 2009 T. Semiconductor physics (Beijing: Publishing House of Electronics Industry) p245 (in Chinese) [刘恩科, 朱秉升, 罗晋生 2009 半导体物理学 (北京: 电子工业出版社) 第245页]
[21]	Chu J H 2005 Narrow-bandgap semiconductor physics (Beijing: Scientific Press) (in Chinese) p369 [褚君浩 2005 窄禁带半导体物理学 (北京: 科学出版社) 第369页]
[22]	Shen X C 2002 The Spectrum and Optical Properties of Semiconductor (Beijing: Science Press) p156 (in Chinese) [沈学础 2002 半导体光谱和光学性质 (北京: 科学出版社) 第156页]

施引文献

[1]	Jiang T, Cheng X A, Zheng X, Xu Z J, Jiang H M, Lu Q S 2012 Acta Phys. Sin. 61 137302 (in Chinese) [江天, 程湘爱, 郑鑫, 江厚满, 陆启生 2012 物理学报 61 137302]
[2]	Zheng X, Jiang T, Cheng X A, Jiang H M, Lu Q S 2012 Acta phys. Sin. 61 047302 (in Chinese) [郑鑫, 江天, 程湘爱, 江厚满, 陆启生 2012 物理学报 61 047302]
[3]	Kuanr A V, Bansal S K, Srivatava G P 1996 Opt. and Laser Technol. 28 345
[4]	Jiang T, Cheng X A, Li L, Jiang H M, Lu Q S 2011 Optics and Spectroscopy 111 162
[5]	Wysoki B T, Marciniak M A 2008 Infrared Phys. Technol. 51 137
[6]	Jiang T, Cheng X A, Zheng X, Jiang H M, Lu Q S 2011 Semicond. Sci. Technol. 26 115004
[7]	Jiang T, Cheng X A, Jiang H M, Lu Q S 2011 Acta phys. Sin. 60 107305 (in Chinese) [江天, 程湘爱, 江厚满, 陆启生 2011 物理学报 60 107305]
[8]	Jiang T, Zheng X, Cheng X A, Xu Z J, Jiang H M, Lu Q S 2012 Semicond. Sci. Technol. 27 015020
[9]	Li X Q, Cheng X A, Wang R 2003 China J. Letter. 30 1070 (in Chinese) [李修乾, 程湘爱, 王睿 2003 中国激光 28 1070]
[10]	Li X Q, Cheng X A, Wang R 2003 High Power Laser and Partial Beams 15 40 (in Chinese) [李修乾, 程湘爱, 王睿 2003 强激光与粒子束 15 40]
[11]	Wang R, Si L, Lu Q S 2003 Laser {& Infrared.} 33 335 (in Chinese) [王睿, 司磊, 陆启生 2003 激光与红外 33 335]
[12]	Ma L Q, Lu Q S, Du S J 2004 China J. Letter. 31 342 (in Chinese) [马丽芹, 陆启生, 杜少军 2004 中国激光 31 342]
[13]	Ma L Q, Lu Q S, 2006 High Power Laser and Partial Beams 18 201 (in Chinese) [马丽芹, 陆启生 2006 强激光与粒子束 18 201]
[14]	Li L, Lu Q S, Jiang H M, Cheng X A 2007 Acts. Opt. Sin. 27 85 (in Chinese) [李莉, 陆启生, 江厚满, 程湘爱 2007 光学学报 27 85]
[15]	Li L, Lu Q S 2008 Acts. Opt. Sin. 28 1953 (in Chinese) [李莉, 陆启生 2008 光学学报 28 1953]
[16]	Jiang T, Zheng X, Cheng X A, Xu Z J, Jiang H M, Lu Q S 2012 J. Infrared Millim. Waves 31 216 (in Chinese) [江天, 郑鑫, 程湘爱, 许中杰, 江厚满, 陆启生 2012 红外与毫米波学报 31 216]
[17]	He Y X, Jiang H M 201 0High Power Laser and Particle Beams 22 2829 (in Chinese) [贺元兴, 江厚满 2010 强激光与粒子束 22 2829]
[18]	Sun C W, Lu Q S, Fan W X, Li W F, Guan J L, Guan C W 2002 Effect of laser irradiation (Beijing: Publishing House of national defence industry ) (in Chinese) p349 [孙承伟, 陆启生, 范正修, 李成福, 关吉利, 关崇文 2002 激光辐照效应 (北京: 国防工业出版社) 第349页]
[19]	Lu Q S, Jiang Z P, Liu Z J 1991 Semicond. Sci. Technol. 6 1039
[20]	Liu E K, Zhu B S, Luo J S 2009 T. Semiconductor physics (Beijing: Publishing House of Electronics Industry) p245 (in Chinese) [刘恩科, 朱秉升, 罗晋生 2009 半导体物理学 (北京: 电子工业出版社) 第245页]
[21]	Chu J H 2005 Narrow-bandgap semiconductor physics (Beijing: Scientific Press) (in Chinese) p369 [褚君浩 2005 窄禁带半导体物理学 (北京: 科学出版社) 第369页]
[22]	Shen X C 2002 The Spectrum and Optical Properties of Semiconductor (Beijing: Science Press) p156 (in Chinese) [沈学础 2002 半导体光谱和光学性质 (北京: 科学出版社) 第156页]

[1]	王婉玉, 石凯熙, 李金华, 楚学影, 方铉, 匡尚奇, 徐国华. MoO₃覆盖层对MoS₂基光伏型光电探测器性能的影响. 物理学报, 2023, 72(14): 147301. doi: 10.7498/aps.72.20230464
[2]	戴川生, 董志鹏, 林加强, 姚培军, 许立新, 顾春. 基于纯水可饱和吸收体的1.9 μm波段被动调Q和锁模掺铥光纤激光器. 物理学报, 2022, 71(17): 174202. doi: 10.7498/aps.71.20212125
[3]	王雅琴, 胡广月, 赵斌, 郑坚. 神光Ⅲ激光装置直接驱动内爆靶产生的连续谱X光源. 物理学报, 2017, 66(11): 115202. doi: 10.7498/aps.66.115202
[4]	张治国. 垂直多结光伏型集成硅X射线探测器的实现和实验. 物理学报, 2014, 63(24): 248501. doi: 10.7498/aps.63.248501
[5]	臧鸽, 黄永清, 骆扬, 段晓峰, 任晓敏. 高速高饱和单行载流子光探测器的设计与分析. 物理学报, 2014, 63(20): 208502. doi: 10.7498/aps.63.208502
[6]	郑鑫, 江天, 程湘爱, 江厚满, 陆启生. 波段外激光辐照光导型InSb探测器的一种新现象. 物理学报, 2012, 61(4): 047302. doi: 10.7498/aps.61.047302
[7]	江天, 程湘爱, 郑鑫, 许中杰, 江厚满, 陆启生. 光伏碲镉汞探测器在波段内连续激光辐照下的非线性响应机理研究. 物理学报, 2012, 61(13): 137302. doi: 10.7498/aps.61.137302
[8]	张姗, 胡晓宁. Si基碲镉汞光伏探测器的深能级研究. 物理学报, 2011, 60(6): 068502. doi: 10.7498/aps.60.068502
[9]	刘欢, 巩马理. 紧凑型LD端面抽运Nd:YAG内腔三倍频准连续355 nm紫外激光器. 物理学报, 2009, 58(8): 5443-5449. doi: 10.7498/aps.58.5443
[10]	张玉萍, 张会云, 何志红, 王鹏, 李喜福, 姚建铨. 36 W侧面抽运腔内倍频Nd:YAG/KTP连续绿光激光器. 物理学报, 2009, 58(7): 4647-4651. doi: 10.7498/aps.58.4647
[11]	鲁远甫, 谢仕永, 薄勇, 崔前进, 宗楠, 高宏伟, 彭钦军, 崔大复, 许祖彦. 高功率准连续波腔内和频全固态黄光激光器. 物理学报, 2009, 58(2): 970-974. doi: 10.7498/aps.58.970
[12]	殷菲, 胡伟达, 全知觉, 张波, 胡晓宁, 李志锋, 陈效双, 陆卫. 激光束诱导电流法提取HgCdTe光伏探测器的电子扩散长度. 物理学报, 2009, 58(11): 7884-7890. doi: 10.7498/aps.58.7884
[13]	乔辉, 廖毅, 胡伟达, 邓屹, 袁永刚, 张勤耀, 李向阳, 龚海梅. 碲镉汞焦平面光伏器件的实时γ辐照效应研究. 物理学报, 2008, 57(11): 7088-7093. doi: 10.7498/aps.57.7088
[14]	耿爱丛, 薄勇, 毕勇, 孙志培, 杨晓冬, 鲁远甫, 陈亚辉, 郭林, 王桂玲, 崔大复, 许祖彦. V型腔腔内和频产生3 W连续波589 nm黄光激光器. 物理学报, 2006, 55(10): 5227-5231. doi: 10.7498/aps.55.5227
[15]	黄杨程, 刘大福, 梁晋穗, 龚海梅. 短波碲镉汞光伏器件的低频噪声研究. 物理学报, 2005, 54(5): 2261-2266. doi: 10.7498/aps.54.2261
[16]	黄河, 汤定元, 童斐明, 郑国珍. n型碲镉汞MIS器件动态存储时间研究. 物理学报, 1994, 43(11): 1883-1888. doi: 10.7498/aps.43.1883
[17]	许应凡, 陈红, 王文魁. 20m落管中Pd-Ni-P合金的过冷与过饱和固溶相的形成. 物理学报, 1992, 41(7): 1111-1118. doi: 10.7498/aps.41.1111
[18]	许应凡, 黄新明, 陈红, 王文魁. 高压下Pd-Ni-P过饱和固溶体的形成. 物理学报, 1991, 40(5): 781-786. doi: 10.7498/aps.40.781
[19]	陈熙琛, 王祖仑, 管惟炎. 急冷Al-lat%Ge过饱和固溶体合金的正常-超导转变特性. 物理学报, 1983, 32(2): 256-258. doi: 10.7498/aps.32.256
[20]	张春平, 张光寅, 刘治国, 巴恩旭, 吕可诚. 多横模内腔He—Ne激光器的特殊偏振现象. 物理学报, 1982, 31(11): 1541-1546. doi: 10.7498/aps.31.1541

计量

文章访问数: 8268
PDF下载量: 1193
被引次数: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

搜索

留言板