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通过溶剂蒸发对流自组装法制备SiO2三维有序胶体晶体模板,采用等离子体增强化学气相沉积法在200℃低温条件下填充高折射率材料Ge,获得了Ge反opal三维光子晶体.实现了低于GeH4热分解温度的低温填充.通过扫描电镜、X射线衍射仪和傅里叶变换显微红外光谱仪对Ge反opal的形貌、成分和光学性能进行了表征.结果表明:沉积得到无定型态Ge,退火后形成多晶Ge,Ge在SiO2微球空隙内填充致密均匀.Ge反opal的反射光谱有明显的光学反射峰,表现
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关键词:
- Ge反蛋白石(opal)光子晶体 /
- 低温等离子增强化学气相沉积 /
- 高分子材料 /
- 光子带隙
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[8] [8]Xia Y N, Gates B, Yin Y D, Lu Y 2000 Adv. Mater. 12 693
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[10] ]Tétreault N, Freymann G V, Deubel M, Hermatschweiler M, Pérez-Willard F, John S, Wegener M, Ozin G A 2006 Adv. Mater. 18 457
[11] ]Blanco A, Chomski E, Grabtchak S, Ibisate M, John S, Leonard S W 2000 Nat. 405 437
[12] ]Vlasov Y A, Bo X, Sturm J C, Norris D 2001 Nat. 414 289
[13] ]Li Y J, Xie K, Xu J, Long Y F 2006 Mater. Rev. 20 129[李宇杰、谢凯、许静、龙永福 2006 材料导报 20 129]
[14] ]García-Santamaría F, Ibisate M, Rodríguez I, Meseguer F, López C 2003 Adv. Mater. 15 788
[15] ]Míguez H, Chomski E, García-Santamaría F, Ibisate M, John S, López C, Meseguer F, Mondia J P, Ozin G A, Toader O, Van Driel H M 2001 Adv. Mater. 13 1634
[16] ]Yang M J, Shieh J, Hsu S L, Huang I J, Leu C C, Shen S W, Huang T Y, Lehnen P, Chien C H 2005 Solid-State Electrochem. Lett. 8 C74
[17] ]Ou H, R T P, Rdam, Rottwitt K, Grumsen F, Horsewell A, Berg R W 2007 Appl. phys. B: Lasers and Optics b 87 327
[18] ]Carrion M N P, Bottechia J P, Pereyra I 1997 Thin Solid Films 308-309 219
[19] ]Tian M B 2006 Thin Film Technologies and Materials (Beijing: Tstinghua University Press) p198 (in Chinese)[田民波 2006 薄膜技术与薄膜材料(北京: 清华大学出版社) 第198页]
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[1] [1]Yablonovitch E 1987 Phys. Rev. Lett. 58 2059
[2] [2]John S 1987 Phys. Rev. Lett. 58 2486
[3] [3]Krauss T F, De La Rue R M, Brand S 1996 Nat. 383 699
[4] [4]Birner A, Mubller, F, Gruning U 1998 Phys. Stat. Sol. (a) 165 111
[5] [5]Campbell M, Sharp D, Harrison M T, Denning R G, Turberfield A J 2000 Nat. 404 53
[6] [6]Deubel M, Freymann G V, Wegener M, Pereira S, Busch K, Soukoulis C M 2004 Nat. Mater. 3 444
[7] [7]Zhong Y C, Zhu S A, Wang H Z, Zeng Z H, Chen Y L 2006 Acta Phy. Sin. 55 688 (in Chinese)[钟永春、朱少安、汪河洲、曾兆华 陈用烈 2006 物理学报 55 688]
[8] [8]Xia Y N, Gates B, Yin Y D, Lu Y 2000 Adv. Mater. 12 693
[9] [9]Jenekhe S A, Chen X L 1999 Sci. 283 372
[10] ]Tétreault N, Freymann G V, Deubel M, Hermatschweiler M, Pérez-Willard F, John S, Wegener M, Ozin G A 2006 Adv. Mater. 18 457
[11] ]Blanco A, Chomski E, Grabtchak S, Ibisate M, John S, Leonard S W 2000 Nat. 405 437
[12] ]Vlasov Y A, Bo X, Sturm J C, Norris D 2001 Nat. 414 289
[13] ]Li Y J, Xie K, Xu J, Long Y F 2006 Mater. Rev. 20 129[李宇杰、谢凯、许静、龙永福 2006 材料导报 20 129]
[14] ]García-Santamaría F, Ibisate M, Rodríguez I, Meseguer F, López C 2003 Adv. Mater. 15 788
[15] ]Míguez H, Chomski E, García-Santamaría F, Ibisate M, John S, López C, Meseguer F, Mondia J P, Ozin G A, Toader O, Van Driel H M 2001 Adv. Mater. 13 1634
[16] ]Yang M J, Shieh J, Hsu S L, Huang I J, Leu C C, Shen S W, Huang T Y, Lehnen P, Chien C H 2005 Solid-State Electrochem. Lett. 8 C74
[17] ]Ou H, R T P, Rdam, Rottwitt K, Grumsen F, Horsewell A, Berg R W 2007 Appl. phys. B: Lasers and Optics b 87 327
[18] ]Carrion M N P, Bottechia J P, Pereyra I 1997 Thin Solid Films 308-309 219
[19] ]Tian M B 2006 Thin Film Technologies and Materials (Beijing: Tstinghua University Press) p198 (in Chinese)[田民波 2006 薄膜技术与薄膜材料(北京: 清华大学出版社) 第198页]
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