a-SiNx/nc-Si/a-SiNx双势垒结构中的电荷隧穿和存储效应

王祥; 黄锐; 宋捷; 郭艳青; 陈坤基; 李伟

doi:10.7498/aps.60.027301

摘要

在等离子体增强化学气相沉积系统中利用大氢稀释逐层淀积技术制备nc-Si量子点阵列,用硅烷和氨气混合气体淀积氮化硅层,制备了a-SiNx/nc-Si/a-SiNx不对称双势垒结构,其中隧穿和控制a-SiNx层的厚度分别为3和20 nm.利用电导-电压和电容-电压测量研究结构中的载流子隧穿和存储特性.在同一样品中观测到由于电荷隧穿引起的电导峰和由于电荷存储引起的电容回滞现象.研究结果表明,合理地选择隧穿层和控制栅层的厚度,就能够实现载流子发生共振隧穿进入到nc-Si量子点中,并被保存在nc-Si量子点中.

关键词:

Abstract

The a-SiNx/nc-Si/a-SiNx sandwiched structures are fabricated in a plasma enhanced chemical vapour deposition (PECVD) system on n-type Si substrate. The nc-Si layer in thickness of 5 nm is fabricated from hydrogen diluted silane gas by layer-by-layer deposition technique. The thicknesses of tunnel and control SiNx layer are 3 nm and 20 nm, respectively. Conductance-voltage and capacitance-voltage measurements are used to study the charges tunnelling and storage in the sandsiched structures. Distinct frequency-dependent conductance peaks due to charges tunneling into the nc-Si dots and capacitance-voltage hysteresis characteristic due to charges storage in the nc-Si dots are observed in the same sample. The experimental results demonstrate that by controlling the thickness of tunnel and control SiNx layers charges can be loaded onto nc-Si dots via tunnelling and be stored in a-SiNx/nc-Si/a-SiNx structures.

Keywords:

nc-Si dots /
conductance peak /
storage

作者及机构信息

(1)韩山师范学院物理与电子工程系,潮州 521041; (2)韩山师范学院物理与电子工程系,潮州 521041;南京大学物理系,南京 210093; (3)南京大学物理系,南京 210093

基金项目: 国家自然科学基金(批准号:60806046,10947106)、广东省自然科学基金(批准号:8152104101000004)和广东高校优秀青年创新人才培育项目(批准号:LYM09101)资助的课题.

Authors and contacts

(1)Department of Physics and Electronic Engineering, Hanshan Normal University, Chaozhou 521041, China; (2)Department of Physics and Electronic Engineering, Hanshan Normal University, Chaozhou 521041, China;Department of Physics, Nanjing University, Nanjing 210093, China; (3)Department of Physics, Nanjing University, Nanjing 210093, China

参考文献

[1]	Huang R, Wang D Q, Ding H L, Wang X, Chen K J, Xu J, Guo Y Q, Song J, Ma Z Y 2010 Opt. Express 18 1144
[2]	Ashoori R C 1996 Nature 379 413
[3]	Jia R, Li Z G, Liu M, Long S B, Lü J, Shi Y, Wang S Y 2007 Chin. Phys. 16 795
[4]	Ding H L, Liu K, Wang X, Fang Z H, Huang J, Yu L W, Li W, Huang X F, Chen K J 2008 Acta Phys. Sin. 57 4482 (in Chinese) [丁宏林、刘奎、王祥、方忠慧、黄健、余林蔚、李伟、黄信凡、陈坤基 2008 物理学报 57 4482]
[5]	Chen G, Hou X Y, Huang R, Liu C, Wang Y Y, Yu B, Zhang X 2008 Chin. Phys. B 17 685
[6]	Xu J, Chen K J, Feng D, Miyazaki S, Hirose M 1996 Solid State Commun. 99 269
[7]	Zhang S K, Zhu H J, Lu F, Jiang Z M, Wang X 1998 Phys. Rev. Lett. 80 3340
[8]	Yu W, Li Y C, Ding W G, Zhang J Y, Yang Y B, Fu G S 2008 Acta Phys. Sin. 57 3661 (in Chinese) [于威、李亚超、丁文革、张江勇、杨彦斌、傅广生 2008 物理学报 57 3661]
[9]	Song J, Wang J M, Yu L W, Huang X F, Li W, Chen K J 2007 Res. Prog. Solid State Electron. 27 468 (in Chinese) [宋捷、王久敏、余林蔚、黄信凡、李伟、陈坤基 2007 固体电子学研究与进展 27 468]
[10]	Hirano Y, Sato F, Aihara S, Saito N, Miyazaki S, Hirose M 2001 Appl. Phys. Lett. 79 2255
[11]	Wang Q, Yue G Z, Li J, Han D 2000 Solid State Commun 113 175
[12]	Montelius L, Tegenfeldt J O 1993 Appl. Phys. Lett. 62 2628
[13]	Huang S, Banerjee S, Tung R T, Oda S 2003 J. Appl. Phys. 93 576
[14]	Wu L C, Dai M, Huang X F, Li W, Chen K J 2004 J. Vac. Sci. Technol. B 22 678
[15]	Wu L C, Huang X F, Shi J J, Dai M, Qiao F, Li W, Xu J, Chen K J 2003 Thin Solid Films 425 221
[16]	Dai M, Chen K, Huang X F, Wu L C, Chen K J 2004 J. Appl. Phys. 95 640

施引文献

[1]	Huang R, Wang D Q, Ding H L, Wang X, Chen K J, Xu J, Guo Y Q, Song J, Ma Z Y 2010 Opt. Express 18 1144
[2]	Ashoori R C 1996 Nature 379 413
[3]	Jia R, Li Z G, Liu M, Long S B, Lü J, Shi Y, Wang S Y 2007 Chin. Phys. 16 795
[4]	Ding H L, Liu K, Wang X, Fang Z H, Huang J, Yu L W, Li W, Huang X F, Chen K J 2008 Acta Phys. Sin. 57 4482 (in Chinese) [丁宏林、刘奎、王祥、方忠慧、黄健、余林蔚、李伟、黄信凡、陈坤基 2008 物理学报 57 4482]
[5]	Chen G, Hou X Y, Huang R, Liu C, Wang Y Y, Yu B, Zhang X 2008 Chin. Phys. B 17 685
[6]	Xu J, Chen K J, Feng D, Miyazaki S, Hirose M 1996 Solid State Commun. 99 269
[7]	Zhang S K, Zhu H J, Lu F, Jiang Z M, Wang X 1998 Phys. Rev. Lett. 80 3340
[8]	Yu W, Li Y C, Ding W G, Zhang J Y, Yang Y B, Fu G S 2008 Acta Phys. Sin. 57 3661 (in Chinese) [于威、李亚超、丁文革、张江勇、杨彦斌、傅广生 2008 物理学报 57 3661]
[9]	Song J, Wang J M, Yu L W, Huang X F, Li W, Chen K J 2007 Res. Prog. Solid State Electron. 27 468 (in Chinese) [宋捷、王久敏、余林蔚、黄信凡、李伟、陈坤基 2007 固体电子学研究与进展 27 468]
[10]	Hirano Y, Sato F, Aihara S, Saito N, Miyazaki S, Hirose M 2001 Appl. Phys. Lett. 79 2255
[11]	Wang Q, Yue G Z, Li J, Han D 2000 Solid State Commun 113 175
[12]	Montelius L, Tegenfeldt J O 1993 Appl. Phys. Lett. 62 2628
[13]	Huang S, Banerjee S, Tung R T, Oda S 2003 J. Appl. Phys. 93 576
[14]	Wu L C, Dai M, Huang X F, Li W, Chen K J 2004 J. Vac. Sci. Technol. B 22 678
[15]	Wu L C, Huang X F, Shi J J, Dai M, Qiao F, Li W, Xu J, Chen K J 2003 Thin Solid Films 425 221
[16]	Dai M, Chen K, Huang X F, Wu L C, Chen K J 2004 J. Appl. Phys. 95 640

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