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物理学报. 1992, 41(7): 1106-1110.
doi: 10.7498/aps.41.1106.
形变充氢多晶纯钴中缺陷的正电子湮没研究
- 收稿日期: 1990-09-20
- 修回日期: 1990-11-28
- 刊出日期: 2005-07-03
摘要: 用正电子寿命和多普勒线形参数测量技术,研究了形变和形变充氢多晶钴试样的缺陷性质及其回复行为。观察到形变样品阴极充氢后,氢致缺陷为一定量的位错和空位以及少量的空位团。没有观察到微空洞和微裂纹的产生。单空位的回复温度范围为73—260℃,位错和空位团的退火发生在350—670℃温度范围。测得空位的迁移激活能为Evm=1.09±0.07eV。
English Abstract
INVESTIGATION ON THE DEFECTS IN THE POST-DEFORM- ATION HYDROGEN-CHARGED POLYCRYSTALLINE PURE Co BY POSITRON ANNIHILATION
- Received Date:
20 September 1990
- Accepted Date:
28 November 1990
- Published Online:
03 July 2005
Abstract: Using positron lifetime and Doppler broadening lineshape parameter measurements, the recovery behaviors of defects in the deformed and post-deformation hydrogen-charged poly-crystalline pure Co have been studied. Experimental results indicate that the cathodic hydrogen-charging of deformed sample further introduce an additional amount of dislocations and vacancies as well as some vacancy clusters into it. However, it appears that mirrovoids and microcracks are not produced. The recovery temperature range of vacancies is 73-260℃; the annealing of dislocations and vacancy clusters occur in the range of 350-670℃. The migration activation energy of vacancy was measured to be 1.09±0.07eV.
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