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利用光电子能谱、原子力显微镜以及低能电子衍射等 表面研究手段系统研究了真空沉积生长的酞菁铜薄膜与衬底MoS2（0001）之间的范德瓦耳斯异质结界面电子结构和几何结构. 角分辨光电子能谱清楚地再现了MoS2（0001）衬底在Γ点附近的能带结构. 低能电子衍射结果表明，CuPc薄膜在MoS2（0001）表面沿着衬底表面[1120]，[1210]和[2110]三个晶向有序生长，反映了衬底对CuPc的影响. 原子力显微镜结果表明，CuPc在MoS2 衬底上遵循层状-岛状生长模式：在低生长厚度下（单层薄膜厚度约为0.3 nm），CuPc分子平面平行于MoS2表面上形成均匀连续的薄膜; 在较高的沉积厚度下，CuPc沿衬底晶向形成棒状晶粒，表现出明显的各向异性. 光电子能谱显示界面偶极层为0.07 eV，而且能谱在膜厚1.2 nm饱和，揭示了酞菁铜与MoS2（0001）范德瓦耳斯异质结的能级结构.
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[22] Xiao K, Deng W, Keum J K, Yoon M, Vlassiouk I V, Clark K W, Li A P, Kravchenko I I, Gu G, Payzant E A, Sumpter B G, Smith S C, Browning J F Geohegan D B 2013 J. Am. Chem. Soc. 135 3680
[23] McMenamin J C, Spicer W E 1977 Phys. Rev. B 16 5474
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[1] Xu M, Liang T, Shi M, Chen H 2013 Chem. Rev. 113 3766
[2] Fuhrer M S, Hone J 2013 Nature Nanotechnol. 8 146
[3] Dong H M 2013 Acta Phys. Sin. 62 206101 (in Chinese) [董海明 2013 物理学报 62 206101]
[4] Wu M S, Xu B, Liu G, Ouyang C Y 2012 Acta Phys. Sin. 61 227102 (in Chinese) [吴木生, 徐波, 刘刚, 欧阳楚英 2012 物理学报 61 227102]
[5] Radisavljevic B, Radenovic A, Brivio J, Giacometti V, Kis A 2011 Nature Nanotechnol. 6 147
[6] Wang H, Yu L, Lee Y H, Shi Y, Hsu A, Chin M L, Li L J, Dubey M, Kong J, Palacios T 2012 Nano Lett. 12 4674
[7] Kang J, Li J B, Li S S, Xia J B, Wang L W 2013 Nano Lett. 13 5485
[8] Britnell L, Ribeiro R M, Eckmann A, Jalil R, Belle B D, Mishchenko A, Kim Y J, Gorbachev R V, Georgiou T, Morozov S V, Grigorenko A N, Geim A K, Casiraghi C, Neto A H C, Novoselov K S 2013 Science 340 1311
[9] Chen W B, Yang W F, Zou H J, Tang J X, Deng L F, Li P T 2011 Acta Phys. Sin. 60 117107 (in Chinese) [陈卫兵, 杨伟丰, 邹豪杰, 汤建新, 邓林峰, 黎沛涛 2011 物理学报 60 117107]
[10] Wang N N, Sheng Y J, Zang Y, Jiang Y D 2010 Chin. Phys. B 19 038602
[11] Nardi M V, Detto F, Aversa L, Verucchi R, Salviati G, Iannotta S, Casarin M 2013 Phys. Chem. Chem. Phys. 15 12864
[12] Zhao J Q, Ding M, Zhang T Y, Zhang N Y, Pang Y T, Ji Y J, Chen Y, Wang F X, Fu G 2012 Chin. Phys. B 21 057110
[13] Wu Q H, Hong G, Ng T W, Lee S T 2012 Appl. Phys. Lett. 100 161603
[14] Wang C G, Irfan I, Turinske A J, Gao Y L 2012 Thin Solid Films 525 64
[15] Koma A, Sunouchi K 1985 J. Vac. Sci. Technol. B 3 724
[16] Ludwig C, Strohmaier R, Petersen J, Gompf B, Eisenmenger W 1994 J. Vac. Sci. Technol. B 12 1963
[17] Okudaira K K, Hasegawa S, Ishii H, Seki K, Harada Y, Ueno N 1999 J. Appl. Phys. 85 6453
[18] Fukuma T, Kobayashi K, Yamada H, Matsushige K 2004 J. Appl. Phys. 95 4742
[19] Boker T H, Severin R, Muller A, Janowitz C, Manzke R 2001 Phys. Rev. B 64 235305
[20] Mahatha S K, Patel K D, Menon K S R 2012 J. Phys.: Condens. Matter 24 475504
[21] Huang H, Sun J T, Feng Y P, Chen W, Wee A T S 2011 Phys. Chem. Chem. Phys 13 20933
[22] Xiao K, Deng W, Keum J K, Yoon M, Vlassiouk I V, Clark K W, Li A P, Kravchenko I I, Gu G, Payzant E A, Sumpter B G, Smith S C, Browning J F Geohegan D B 2013 J. Am. Chem. Soc. 135 3680
[23] McMenamin J C, Spicer W E 1977 Phys. Rev. B 16 5474
[24] Yamane H, Yabuuchi Y, Fukagawa H, Kera S, Okudaira K K, Ueno N 2006 J. Appl. Phys. 99 093705
[25] Chen W, Chen S, Huang H, Qi D C, Gao X Y, Wee A T S 2008 Appl. Phys. Lett. 92 063308
[26] Gao Y L Yan L 2003 Chem. Phys. Lett. 380 451
[27] Ding H J, Gao Y L, Cinchetti M, Wstenberg J P, Sánchez-Albaneda M, Andreyev O, Bauer M, Aeschlimann M 2008 Phys. Rev. B 78 075311
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