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物理学报. 1997, 46(6): 1183-1187.
doi: 10.7498/aps.46.1183.
硫掺杂C60薄膜电学性质研究
- 收稿日期: 1996-10-08
- 刊出日期: 1997-06-20
摘要: 对硫掺杂C60薄膜样品在433K进行真空退火，并测量了其电导率随温度的变化关系．发现硫掺杂后C60薄膜的电导激活能减小，电导率显著增大．电导率随温度的变化曲线在368K到388K的范围内，存在一个电导率与温度的关系不严格遵循指数规律的过渡区，在过渡区的两侧硫掺杂的C60薄膜则表现出明显的半导体特性，这是由于在不同温度范围内样品中硫分子的结构相变所引起的
English Abstract
ELECTRICAL PROPERTIES OF SULFUR-DOPED C60 FILMS
- Received Date:
08 October 1996
- Published Online:
20 June 1997
Abstract: The temperature dependencies of electrical conductivity of sulfur-doped C60 films were measured after annealing at 433K. The results showed that the conductive activation energy decreased and electrical conductivity of C60 films increased after sulfur-doping. From the logarithmic curve of the electrical conductivity versus temperature,a transition zone was seen where the conductivity did not vary with temperature exponentially;however,when above 388K or below 368K,sulfur-doped C60 films showed obvious semiconductive properties. This phenomenon is due to the phase transformation of sulfur molecules in the film.
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