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本文采用溶胶-凝胶工艺并结合脉冲激光沉积技术, 在Pt/Ti/SiO2/Si衬底上制备了Co/Co3O4/PZT多铁复合薄膜. 对复合薄膜的微结构和组分进行了表征, 并系统研究了复合薄膜中的交换偏置效应及其对磁电耦合作用的影响. 研究结果表明, 复合薄膜在77 K具有明显的交换偏置效应, 交换偏置场达到80 Oe, 且交换偏置场及矫顽场均随温度降低而增大. 当温度降低到10 K时, 交换偏置场增至160 Oe. X射线光电子能谱(XPS)测试结果证实在Co和Co3O4界面处存在约5 nm厚的CoO层, 表明77 K下的交换偏置效应源自反铁磁的CoO层对Co的钉扎作用. 观察到复合薄膜的电容-温度曲线随着外加磁场大小和方向的改变而呈现出规律性的变化, 表明复合薄膜存在磁电耦合效应. 进一步研究发现, 在低温下复合薄膜呈现出各向异性的磁电容效应, 与磁场大小和方向密切相关. 复合薄膜的这种磁电耦合特性主要与复合体系的交换偏置效应及基于界面应力传递的磁电耦合作用有关, 本文对其中的物理机理进行了详细讨论与分析.
[1] Wang J, Neaton J B, Zheng H, Nagarajan V, Ogale S B, Liu B, Viehland D, Vaithyanathan V, Schlom D G, Waghmare U V, Spaldin N A, Rabe K M, Wutting M, Ramesh R 2003 Science 299 1719
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[19] Lage E, Kirchhof C, Hrkac V, Kienle L, Jahns R, Knöchel R, Quandt E, Meyners D 2012 Nat. Mater. 11 523
[20] Fan Y, Smith K J, Lpke G, Hanbicki A T, Goswami R, Li C H, Zhao H B, Jonker B T 2013 Nat. Nanotech. 8 438
[21] Nogués J, Schuller K 1999 J. Magn. Magn. Mater. 192 203
[22] Przybylshi K, Smeltzer W W 1981 J. Electrochem. Soc. 128 897
[23] Wang Y X, Zhang Y J, Gao Y M, Lu M, Yang J H 2008 J. Alloys. Compd. 450 128
[24] Vaz C A, Altman E I, Henrich V E 2010 Phys. Rev. B 81 104428
[25] Yu G H, Chai C L, Zhu F W, Xiao J M, Lai W Y 2001 Appl. Pys. Lett. 78 1706
[26] Wang S G, Huan G, Yu G H, Jiang Y, Wang C, Kohn A, Ward R C C 2007 J. Magn. Magn. Mater. 310 1935
[27] Wang S G, Ward R C C, Hesjedal T, Zhang X G, Wang C, Kohn A, Ma Q L, Zhang J, Liu H F, Han X F 2012 J. Nanosci. Nanotechnol. 12 1006
[28] Miltényi P, Gierlings M, Keller J, Beschoten B, Gntherodt G 2000 Phys. Rev. Lett. 84 4224
[29] Zhou S M, Sun L, Searon P C, Chien C L 2004 Phys. Rev. B 69 024408
[30] Hong J, Leo T, Smith D J, Berkowitz A E 2006 Phys. Rev. Lett. 96 117204
[31] Kim W, Oh S J, Nahm T U 2002 Sci. Rev. Lett. 9 931
[32] Chuang T J, Brundle C R, Rice D W 1976 Sur. Sci. 59 423
[33] Petitto S C, Langell M A 2004 J. Vac. Sci. Technol. A 22 1690
[34] Martienssen W, Warlimont H 2005 Springer Handbook of Condensed Matter and Materials Data (Berlin:Springer Berlin Heidelberg) p916
[35] Bouzid A, Bourim E M, Gabbay M, Fantozzi G 2005 J. Eur. Ceram. Soc. 25 3213
[36] Iliev M, Angelov S, Kostadinov I Z, Bojchev V, Hadjiev V 1982 Phys. Stat. Sol. 71 627
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[1] Wang J, Neaton J B, Zheng H, Nagarajan V, Ogale S B, Liu B, Viehland D, Vaithyanathan V, Schlom D G, Waghmare U V, Spaldin N A, Rabe K M, Wutting M, Ramesh R 2003 Science 299 1719
[2] Kimura T, Goto T, Shintani H, Ishizaka K, Arima T, Tokura Y 2003 Nature 426 55
[3] Spaldin N A, Fiebig M 2005 Science 309 391
[4] Eerenstein W, Mathur N D, Scott J F 2006 Nature 442 759
[5] Ramesh R, Spaldin N A 2007 Nat. Mater. 6 21
[6] Nan C W, Bichurin M I, Dong S X, Viehland D, Srinivasan G 2008 J. Appl. Phys. 103 031101
[7] Wang K F, Liu J M, Ren Z F 2009 Adv. Phys. 58 321
[8] Hill N A 2000 J. Phys. Chem. B 104 6694
[9] Bibes M, Barthélémy A 2008 Nat. Mater. 7 425
[10] Ma J, Hu J M, Li Z, Nan C W 2011 Adv. Mater. 23 1062
[11] Radaelli G, Petti D, Plekhanov E, Fina I, Torelli P, Salles B R, Cantoni M, Rinaldi C, Gutiérrez D, Panaccione G, Varela M, Picozzi S, Fontcuberta J, Bertacco R 2014 Nat. Commun. 5 3404
[12] Lu X L, Kim Y, Goetze S, Li X G, Dong S N, Warner P, Alexe M, Hesse D 2011 Nano Lett. 11 3202
[13] Cherifi R O, Ivanovskaya V, Phillips L C, Zobelli A, Infante I C, Jacquet E, Garcia V, Fusil S, Briddon P R, Guiblin N, Mougin A, nal A A, Kronast F, Valencia S, Dkhil B, Barthélémy A, Bibes M 2014 Nat. Mater. 13 345
[14] Wan J G, Wang X W, Wu Y J, Zeng M, Wang Y, Jiang H, Zhou W Q, Wang G H, Liu J M 2005 Appl. Pys. Lett. 86 122501
[15] Chen B, Li Y C, Wang J Y, Wan J G, Liu J M 2014 J. Appl. Phys. 115 044102
[16] Meiklejohn W H, Bean C P 1956 Phys. Rev. 102 1413
[17] Meiklejohn W H, Bean C P 1957 Phys. Rev. 105 904
[18] Qu T L, Zhao Y G, Yu P, Zhao H C, Zhang S, Yang L F 2014 Appl. Pys. Lett. 100 242410
[19] Lage E, Kirchhof C, Hrkac V, Kienle L, Jahns R, Knöchel R, Quandt E, Meyners D 2012 Nat. Mater. 11 523
[20] Fan Y, Smith K J, Lpke G, Hanbicki A T, Goswami R, Li C H, Zhao H B, Jonker B T 2013 Nat. Nanotech. 8 438
[21] Nogués J, Schuller K 1999 J. Magn. Magn. Mater. 192 203
[22] Przybylshi K, Smeltzer W W 1981 J. Electrochem. Soc. 128 897
[23] Wang Y X, Zhang Y J, Gao Y M, Lu M, Yang J H 2008 J. Alloys. Compd. 450 128
[24] Vaz C A, Altman E I, Henrich V E 2010 Phys. Rev. B 81 104428
[25] Yu G H, Chai C L, Zhu F W, Xiao J M, Lai W Y 2001 Appl. Pys. Lett. 78 1706
[26] Wang S G, Huan G, Yu G H, Jiang Y, Wang C, Kohn A, Ward R C C 2007 J. Magn. Magn. Mater. 310 1935
[27] Wang S G, Ward R C C, Hesjedal T, Zhang X G, Wang C, Kohn A, Ma Q L, Zhang J, Liu H F, Han X F 2012 J. Nanosci. Nanotechnol. 12 1006
[28] Miltényi P, Gierlings M, Keller J, Beschoten B, Gntherodt G 2000 Phys. Rev. Lett. 84 4224
[29] Zhou S M, Sun L, Searon P C, Chien C L 2004 Phys. Rev. B 69 024408
[30] Hong J, Leo T, Smith D J, Berkowitz A E 2006 Phys. Rev. Lett. 96 117204
[31] Kim W, Oh S J, Nahm T U 2002 Sci. Rev. Lett. 9 931
[32] Chuang T J, Brundle C R, Rice D W 1976 Sur. Sci. 59 423
[33] Petitto S C, Langell M A 2004 J. Vac. Sci. Technol. A 22 1690
[34] Martienssen W, Warlimont H 2005 Springer Handbook of Condensed Matter and Materials Data (Berlin:Springer Berlin Heidelberg) p916
[35] Bouzid A, Bourim E M, Gabbay M, Fantozzi G 2005 J. Eur. Ceram. Soc. 25 3213
[36] Iliev M, Angelov S, Kostadinov I Z, Bojchev V, Hadjiev V 1982 Phys. Stat. Sol. 71 627
[37] Lee E W 1955 Rep. Prog. Phys.. 18 184
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