硼膜制备工艺、微观结构及其在硼化镁超导约瑟夫森结中的应用

王松; 王星云; 周章渝; 杨发顺; 杨健; 傅兴华

doi:10.7498/aps.65.017401

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硼膜制备工艺、微观结构及其在硼化镁超导约瑟夫森结中的应用

王松 , 王星云 , 周章渝 , 杨发顺 , 杨健 , 傅兴华

硼膜制备工艺、微观结构及其在硼化镁超导约瑟夫森结中的应用

王松, 王星云, 周章渝, 杨发顺, 杨健, 傅兴华

物理学报. 2016, 65(1): 017401.

doi: 10.7498/aps.65.017401.

摘要

MgB2材料具备临界转变温度较高、相干长度大、临界电流和临界磁场高等优点, 被认为有替代Nb基超导材料的潜力. 研究了不同温度下以化学气相沉积法制备的硼(B)薄膜的微观结构. 实验结果表明: 较低温度沉积的B先驱薄膜为无定形B膜, 可以与Mg蒸气反应生成MgB2超导薄膜; 当沉积温度高于550 ℃时, 所得硼薄膜为晶型薄膜; 以晶型硼薄膜为先驱膜在镁蒸气中退火, 不能生成硼化镁超导薄膜. 利用晶型B膜的这一特点, 成功制备了以晶型硼薄膜为介质层的硼化镁超导约瑟夫森结.

关键词:

作者及机构信息

1.
贵州大学大数据与信息工程学院电子科学系, 贵阳 550025;

2.
贵州大学科技学院, 贵阳 550025

通信作者: 傅兴华, fxh@gzu.edu.cn

基金项目: 贵州省科学技术基金(批准号: 黔科合J字2012-2129号)资助的课题.

参考文献

[1]	Nagamatsu J, Nakagawa N, Muranaka T, Zenitani Y, Akimitsu J 2001 Nature 410 63
[2]	Sun X, Huang X, Wang Y Z, Feng Q R 2011 Acta Phys. Sin. 60 087401 (in Chinese) [孙玄, 黄煦, 王亚洲, 冯庆荣 2011 物理学报 60 087401]
[3]	Luo F, Fu M, Ji G F, Chen X R 2010 Chin. Phys. B 19 027101
[4]	Greenwood N N, Earnshaw A 1997 Chemistry of the Elements (2nd Ed.) (Oxford, London, Butterworth: Heinemann Press) p145
[5]	Emin D 1987 Phys. Today 40 55
[6]	Masago A, Shirai K, Katayama-Yoshida H 2006 Phys. Rev. B 73 104102
[7]	Artem R O, Chen J H, Carlo Gatti, Ma Y Z, Ma Y M, Glass C W, Liu Z X, Yu T, Kurakevych O O, Solozhenko V L 2009 Nature 457 863
[8]	Sanz D N, Loubeyre P, Mezouar M 2002 Phys. Rev. Lett. 89 245501
[9]	Zarechnaya E Y, Dubrovinsky L, Dubrovinskaia N, Filinchuk Y, Chernyshov D, Dmitriev V, Miyajima N, El Goresy A, Braun H F, van Smaalen S, Kantor I, Kantor A, Prakapenka V, Hanfland M, Mikhaylushkin A S, Abrikosov I A, Simak S I 2009 Phys. Rev. Lett. 102 185501
[10]	Wang D S, Fu X H, Zhang Z P, Yang J 2002 Chin. Phys. Lett. 19 1179
[11]	Fu X H, Wang D S, Zhang Z P, Yang J 2001 Physica C 377 407
[12]	Yang J, Wang S, Yang F S, Zhang Z P, Ding Z, Fu X H 2007 Physica C 467 1
[13]	Zhou Z Y, Wang S,Yang F S, Yang J, Fu X H 2012 Chin. J. Low Temp. Phys. 34 441 (in Chinese) [周章渝, 王松, 杨发顺, 杨健, 傅兴华 2012 低温物理学报 34 441]
[14]	Zhou Z Y, Yang F S, Wang S, Yang J, Fu X H 2013 J. Funct. Mater. 4 893 (in Chinese) [周章渝, 杨发顺, 王松, 杨健, 傅兴华 2013 功能材料 4 893]
[15]	Chen K, Zhuang C G, Li Q, Weng X, Redwing J M, Zhu Y, Voyles P M, Xi X X 2011 IEEE Trans. Appl. Supercond. 21 115

施引文献

[1]	Nagamatsu J, Nakagawa N, Muranaka T, Zenitani Y, Akimitsu J 2001 Nature 410 63
[2]	Sun X, Huang X, Wang Y Z, Feng Q R 2011 Acta Phys. Sin. 60 087401 (in Chinese) [孙玄, 黄煦, 王亚洲, 冯庆荣 2011 物理学报 60 087401]
[3]	Luo F, Fu M, Ji G F, Chen X R 2010 Chin. Phys. B 19 027101
[4]	Greenwood N N, Earnshaw A 1997 Chemistry of the Elements (2nd Ed.) (Oxford, London, Butterworth: Heinemann Press) p145
[5]	Emin D 1987 Phys. Today 40 55
[6]	Masago A, Shirai K, Katayama-Yoshida H 2006 Phys. Rev. B 73 104102
[7]	Artem R O, Chen J H, Carlo Gatti, Ma Y Z, Ma Y M, Glass C W, Liu Z X, Yu T, Kurakevych O O, Solozhenko V L 2009 Nature 457 863
[8]	Sanz D N, Loubeyre P, Mezouar M 2002 Phys. Rev. Lett. 89 245501
[9]	Zarechnaya E Y, Dubrovinsky L, Dubrovinskaia N, Filinchuk Y, Chernyshov D, Dmitriev V, Miyajima N, El Goresy A, Braun H F, van Smaalen S, Kantor I, Kantor A, Prakapenka V, Hanfland M, Mikhaylushkin A S, Abrikosov I A, Simak S I 2009 Phys. Rev. Lett. 102 185501
[10]	Wang D S, Fu X H, Zhang Z P, Yang J 2002 Chin. Phys. Lett. 19 1179
[11]	Fu X H, Wang D S, Zhang Z P, Yang J 2001 Physica C 377 407
[12]	Yang J, Wang S, Yang F S, Zhang Z P, Ding Z, Fu X H 2007 Physica C 467 1
[13]	Zhou Z Y, Wang S,Yang F S, Yang J, Fu X H 2012 Chin. J. Low Temp. Phys. 34 441 (in Chinese) [周章渝, 王松, 杨发顺, 杨健, 傅兴华 2012 低温物理学报 34 441]
[14]	Zhou Z Y, Yang F S, Wang S, Yang J, Fu X H 2013 J. Funct. Mater. 4 893 (in Chinese) [周章渝, 杨发顺, 王松, 杨健, 傅兴华 2013 功能材料 4 893]
[15]	Chen K, Zhuang C G, Li Q, Weng X, Redwing J M, Zhu Y, Voyles P M, Xi X X 2011 IEEE Trans. Appl. Supercond. 21 115

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物理学报. 2016, 65(1): 017401.

doi: 10.7498/aps.65.017401.

硼膜制备工艺、微观结构及其在硼化镁超导约瑟夫森结中的应用

1. 贵州大学大数据与信息工程学院电子科学系, 贵阳 550025;
2. 贵州大学科技学院, 贵阳 550025

通信作者: 傅兴华, fxh@gzu.edu.cn

基金项目:

贵州省科学技术基金(批准号: 黔科合J字2012-2129号)资助的课题.

收稿日期: 2015-09-04
修回日期: 2015-10-19
刊出日期: 2016-01-05

摘要: MgB2材料具备临界转变温度较高、相干长度大、临界电流和临界磁场高等优点, 被认为有替代Nb基超导材料的潜力. 研究了不同温度下以化学气相沉积法制备的硼(B)薄膜的微观结构. 实验结果表明: 较低温度沉积的B先驱薄膜为无定形B膜, 可以与Mg蒸气反应生成MgB2超导薄膜; 当沉积温度高于550 ℃时, 所得硼薄膜为晶型薄膜; 以晶型硼薄膜为先驱膜在镁蒸气中退火, 不能生成硼化镁超导薄膜. 利用晶型B膜的这一特点, 成功制备了以晶型硼薄膜为介质层的硼化镁超导约瑟夫森结.

关键词:

English Abstract

Preparation, microstructure of B film and its applications in MgB2 superconducting Josephson junction

1.
Department of Electronics, College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, China;

2.
College of Science and Technical, Guizhou University, Guiyang 550025, China

Fund Project:
Project supported by the Science and Technology Foundation of Guizhou Province, China (Grant No. 2012-2129).

Received Date: 04 September 2015
Accepted Date: 19 October 2015
Published Online: 05 January 2016

Abstract: Magnesium diboride is a binary compound with a simple AlB2 type crystal structure and a high-Tc (nearly 40 K) superconductor. The rather high Tc value and the specific properties make it a potential material for electronic applications. The key structure for the application is a Josephson junction. The growth of tri-layer structure consisting of MgB2 film and tunneling barrier layer is a key technology for a Josephson junction. Boron is a kind of good insulating medium. Preparation of MgB2/B/MgB2 tri-layer structures by chemical vapor deposition (CVD) method is investigated. The experimental results indicate that the depositing temperature will influence the microstructure of boron film significantly and different crystal structures of boron films are obtained at different temperatures.The boron film is an amorphous film while the deposition temperature is lower than 500 ℃, and the amorphous B film can be transformed into MgB2 superconducting film by annealing in Mg vapor. For precursor B films deposited at 470 ℃ and 500 ℃, the critical temperatures of the relevant MgB2 films are 39.8 K and 38.5 K, respectively. As the deposition temperature is higher than 550 ℃, the boron film becomes crystallized, and increasing deposition temperature will increase the crystallinity of the B film as can be seen from the samples deposited at 550 ℃, 600 ℃, 650 ℃ and 680 ℃. The boron film turns out to be of -phase crystalline texture, which is verified by X-ray diffraction and scanning electron microscope. What is more, the crystalline boron film is a kind of inert film, and it does not react with Mg in Mg vapor, thus it cannot be transformed into superconducting film in the subsequent annealing steps. By utilizing the property of the crystallized boron film, a square-shaped Josephson junction with a size 100 m100 m of MgB2/B/MgB2 structure is prepared. The thickness of boron dielectric layer is about 10 nm, and the DC Josephson effect is observed by the I-V measurement of the junction. Compared with other tri-layer structure based on MgB2 material, such as the MgB2/MgO/MgB2, the structure in which B film serves as a barrier layer eliminates the oxygen and can be fabricated in-situ easily by CVD method, and reliable Josephson junctions can be expected by such a technology.

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