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物理学报. 1988, 37(6): 950-958.
doi: 10.7498/aps.37.950.
a-Ge/Ag迭层中的临近效应和互扩散
- 收稿日期: 1987-08-25
- 刊出日期: 1988-03-05
摘要: 本文研究了不同厚度Ag膜与2000?非晶Ge膜形成的迭层行为。发现随Ag膜厚度的减小,迭层的室温电阻率愈来愈小于相同厚度单层Ag膜的室温电阻率,实验在室温下得出明显的临近效应。当对这些迭层退火时,实验得到十分不同的电阻R300K与退火温度Ta的关系以及不同Ta下各种R(Ta)-T的关系。由X射线衍射结构分析电子显微镜观察和电子探针扫描成分分析的结果,本文给这些退火过程中的新现象以物理解释。
English Abstract
THE PROXIMITY EFFECT AND MUTUAL DIFFUSION IN a-Ge/Ag LAYERS
- Received Date:
25 August 1987
- Published Online:
05 March 1988
Abstract: In the present work, the behaviors of a-Ge/Ag composite layers are studied. These layers are composed of amorphous Ge film with thickness 2000 ? and Ag film with different thickness. It is found that, when the thickness of Ag film decreases, the electrical resistivity of the composite layer at room temperature becomes more and more smaller than that of Ag mono-layer with the same thickness. The proximity effect at room temperature is shown clearly by experiment. As the samples are annealed, we obtain various R(Ta)-T relations under different annealling temperature Ta and various dependences of R300k on Ta for layers withe different thickness of Ag film. Based on structural analysis by XRD and composition analysis by EMP, and observation with TEM and SEM, the new phenomena are explained.
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