功能化扶手椅型石墨烯纳米带异质结的磁器件特性

朱朕; 李春先; 张振华

doi:10.7498/aps.65.118501

摘要

石墨烯在未来纳米电子器件领域具有广泛的应用前景, 但是基于扶手椅型石墨烯纳米带(AGNR)的磁输运性质的研究还比较少. 本文理论上提出AGNR边缘桥接过渡金属Mn原子, 再用双F 原子(或双H原子)饱和形成特殊化学修饰的纳米带(AGNR-Mn-F2或AGNR-Mn-H2), 并运用基于第一性原理和非平衡态格林函数相结合的方法对其磁输运性质进行理论计算. 结果表明: 这两种纳米带所构成的异质结(F2-AGNR-Mn-H2)具有优良的磁器件特性, 即在很宽的偏压范围内, 能实现100%的自旋极化, 且在P(在左右电极垂直加上相同方向的磁场)和AP构型(在左右电极垂直加上相反方向的磁场)时, 分别具有单自旋和双自旋过滤效应; 同时发现, 这种异质结也具有双自旋二极管效应, 它的最大整流比可达到108. 此外, 改变开关磁场的方向, 即从一种磁构型变换为另一种磁构型时, 能产生明显的自旋阀效应, 其巨磁阻高达108%. 这意味着这种特殊的异质结能同时实现优良的自旋过滤、双自旋二极管及巨磁阻效应, 这对于发展自旋磁器件有重要意义.

关键词:

Abstract

Graphene is predicted to hold a promising use for developing future miniaturized electronic devices. However, the magnetic transport properties based on the armchair-edged graphene nanoribbons (AGNRs) is less studied in currently existing work. So in this work the special chemical modified nanoribbons based on the edge of the AGNR bridged by the transition metal Mn atom and passivated subsequently by two F atoms or two H atoms (AGNR-Mn-F2 or AGNR-Mn-H2) are proposed theoretically. Our calculations from first-principle method based on the spin-polarized density functional theory combined with the non-equilibrium Green's function technique show that the heterojunction F2-AGNR-Mn-H2 consisting of such two types of nanoribbons possesses the excellent magnetic device features, namely, the spin polarization is able to reach almost 100% in a very large bias region, and under P magnetic configuration (the external magnetic fields applied perpendicularly to two electrodes are set to point to the same direction), the single spin filtering effects can be realized, while under the AP configuration (the external magnetic fields applied perpendicularly to two electrodes are set to point to the opposite directions), the dual spin filtering effects can be realized. It is also found that such a heterojunction features dual diode-like effect, and its rectification ratio is up to be 108. Additionally, changing the direction of switching magnetic field, namely, changing the magnetic configurations from one kind of case to another, would lead to an obvious spin valve effect, and the giant magnetoresistace approaches to 108%. These findings suggest that the excellent spin polarization, dual diode-like effect, and giant magnetoresistace effect can be realized simultaneously for this heterojunction, therefore, it holds good promise in developing spintronic devices.

Keywords:

作者及机构信息

1.
长沙理工大学物理与电子科学学院, 长沙 410114

通信作者: 张振华, lgzzhang@sohu.com.

基金项目: 国家自然科学基金(批准号: 61371065, 51302022)和湖南省自然科学基金(批准号: 12JJ3004, 14JJ2076, 2015JJ3002, 2015JJ2009, 2015JJ2013)资助的课题.

Authors and contacts

1.
School of Physics and Electronic Science, Changsha University of Science and Technology, Changsha 410114, China

Corresponding author: Zhang Zhen-Hua, lgzzhang@sohu.com.

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 61371065, 51302022) and Hunan Provincial Natural Science Foundation of China (Grant Nos. 12JJ3004, 14JJ2076, 2015JJ3002, 2015JJ2009, 2015JJ2013).

参考文献

[1]	Huertas-Hernando D, Guinea F, Brataas A 2006 Phys. Rev. B 74 155426
[2]	Fischer J, Trauzettel B, Loss D2009 Phys. Rev. B 80 155401
[3]	Bolotin K I, Sikes K J, Jiang Z, Klima M, Fudenberg G, Hone J 2008 Solid State Commun. 146 351
[4]	Kim T W, Gao Y, Acton O, Yip H L, Ma H, Chen H 2010 Appl. Phys. Lett. 97 023310
[5]	Obradovic B, Kotlyar R, Heinz F, Matagne P, Rakshit T, Giles M D 2006 Appl. Phys. Lett. 88 14210
[6]	Rivero P, Jimenez-Hoyos C A, Scuseria G E 2013 J. Phys. Chem. B 117 12750
[7]	Zeng M, Shen L, Zhou M, Zhang C, Feng Y 2011 Phys. Rev. B 83 115427
[8]	Ozaki T, Nishio K, Weng H, Kino H 2010 Phys. Rev. B 81 115274
[9]	Zeng M, Shen L, Yang M, Zhang C, Feng Y 2011 Appl. Phys. Lett. 98 053101
[10]	Ren Y, Chen K Q 2010 J. Appl. Phys. 107 044514
[11]	Zhang X J, Chen K Q, Tang L M, Long M Q 2011 Phys. Lett. A 375 3319
[12]	Chen Y, Hu H F, Wang X W, Zhang Z J, Cheng C P 2015 Acta Phys.Sin. 64 196101 (in Chinese) [陈鹰, 胡慧芳, 王晓伟, 张照锦, 程彩萍 2015 物理学报 64 196101]
[13]	Wu M, Wu X, Zeng X C 2010 J. Phys. Chem. C 114 3937
[14]	Qiu M, Liew K M 2012 J. Phys. Chem C 116 11709
[15]	Wang Y, Cao C, Cheng H P 2010 Phys. Rev. B 82 2889
[16]	Wagner P, Ewels C P, Adjizian J J, Magaud L, Pochet P, Roche S 2013 J. Phys. Chem. 117 26790
[17]	Li B, Xu D H, Zeng H 2014 Acta Phys. Sin. 63 117102 (in Chinese) [李彪, 徐大海, 曾晖 2014 物理学报 63 117102]
[18]	Song L, Zheng X, Wang R, Zeng Z 2010 J. Phys. Chem. C 114 12145
[19]	Cao C, Wu M, Jiang J, Cheng H P 2010 Phys. Rev. B 81 205424
[20]	Cocchi C, Prezzi D, Calzolari A, Molinari E 2010 J. Phys. Chem. C 133 124703
[21]	Wang D, Zhang Z H, Deng X Q, Fan Z Q 2013 Acta Phys. Sin. 62 207101 (in Chinese) [王鼎, 张振华, 邓小清, 范志强 2013 物理学报 62 207101]
[22]	Jaiswal N K, Srivastava P 2013 Nanotech 12 685
[23]	Jaiswal N K, Srivastava P 2011 Solid State Commun. 151 1490
[24]	Xiao J, Yang Z X, Xie W T, Xiao L X, Xu H, Ouyang F P 2012 Chin. Phys. B 21 027102
[25]	Santos E J, Snchez Portal D, Ayuela A 2010 Phys. Rev. B 81 125433
[26]	Longo R C, Carrete J, Ferrer J, Gallego L J 2010 Phys. Rev. B 81 115418
[27]	Wang Y, Cao C, Cheng H P 2010 Phys. Rev. B: Condens. Matter. 82 2889
[28]	Qiu M, Liew K M 2011 J. Appl. Phys. 110 064319
[29]	Landauer R 1970 Philos. Mag. 21 863
[30]	Li J, Zhang Z H, Wang D, Zhu Z, Fan Z Q, Tang G P 2014 Carbon 69 142
[31]	Zhou Y H, Zeng J, Tang L M, Chen K Q, Hu W P 2013 Org. Electron. 14 2940

施引文献

[1]	Huertas-Hernando D, Guinea F, Brataas A 2006 Phys. Rev. B 74 155426
[2]	Fischer J, Trauzettel B, Loss D2009 Phys. Rev. B 80 155401
[3]	Bolotin K I, Sikes K J, Jiang Z, Klima M, Fudenberg G, Hone J 2008 Solid State Commun. 146 351
[4]	Kim T W, Gao Y, Acton O, Yip H L, Ma H, Chen H 2010 Appl. Phys. Lett. 97 023310
[5]	Obradovic B, Kotlyar R, Heinz F, Matagne P, Rakshit T, Giles M D 2006 Appl. Phys. Lett. 88 14210
[6]	Rivero P, Jimenez-Hoyos C A, Scuseria G E 2013 J. Phys. Chem. B 117 12750
[7]	Zeng M, Shen L, Zhou M, Zhang C, Feng Y 2011 Phys. Rev. B 83 115427
[8]	Ozaki T, Nishio K, Weng H, Kino H 2010 Phys. Rev. B 81 115274
[9]	Zeng M, Shen L, Yang M, Zhang C, Feng Y 2011 Appl. Phys. Lett. 98 053101
[10]	Ren Y, Chen K Q 2010 J. Appl. Phys. 107 044514
[11]	Zhang X J, Chen K Q, Tang L M, Long M Q 2011 Phys. Lett. A 375 3319
[12]	Chen Y, Hu H F, Wang X W, Zhang Z J, Cheng C P 2015 Acta Phys.Sin. 64 196101 (in Chinese) [陈鹰, 胡慧芳, 王晓伟, 张照锦, 程彩萍 2015 物理学报 64 196101]
[13]	Wu M, Wu X, Zeng X C 2010 J. Phys. Chem. C 114 3937
[14]	Qiu M, Liew K M 2012 J. Phys. Chem C 116 11709
[15]	Wang Y, Cao C, Cheng H P 2010 Phys. Rev. B 82 2889
[16]	Wagner P, Ewels C P, Adjizian J J, Magaud L, Pochet P, Roche S 2013 J. Phys. Chem. 117 26790
[17]	Li B, Xu D H, Zeng H 2014 Acta Phys. Sin. 63 117102 (in Chinese) [李彪, 徐大海, 曾晖 2014 物理学报 63 117102]
[18]	Song L, Zheng X, Wang R, Zeng Z 2010 J. Phys. Chem. C 114 12145
[19]	Cao C, Wu M, Jiang J, Cheng H P 2010 Phys. Rev. B 81 205424
[20]	Cocchi C, Prezzi D, Calzolari A, Molinari E 2010 J. Phys. Chem. C 133 124703
[21]	Wang D, Zhang Z H, Deng X Q, Fan Z Q 2013 Acta Phys. Sin. 62 207101 (in Chinese) [王鼎, 张振华, 邓小清, 范志强 2013 物理学报 62 207101]
[22]	Jaiswal N K, Srivastava P 2013 Nanotech 12 685
[23]	Jaiswal N K, Srivastava P 2011 Solid State Commun. 151 1490
[24]	Xiao J, Yang Z X, Xie W T, Xiao L X, Xu H, Ouyang F P 2012 Chin. Phys. B 21 027102
[25]	Santos E J, Snchez Portal D, Ayuela A 2010 Phys. Rev. B 81 125433
[26]	Longo R C, Carrete J, Ferrer J, Gallego L J 2010 Phys. Rev. B 81 115418
[27]	Wang Y, Cao C, Cheng H P 2010 Phys. Rev. B: Condens. Matter. 82 2889
[28]	Qiu M, Liew K M 2011 J. Appl. Phys. 110 064319
[29]	Landauer R 1970 Philos. Mag. 21 863
[30]	Li J, Zhang Z H, Wang D, Zhu Z, Fan Z Q, Tang G P 2014 Carbon 69 142
[31]	Zhou Y H, Zeng J, Tang L M, Chen K Q, Hu W P 2013 Org. Electron. 14 2940

计量

文章访问数: 4870
PDF下载量: 236
被引次数: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

搜索

留言板