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二维半导体过渡金属硫化物的逻辑集成器件

李卫胜 周健 王瀚宸 汪树贤 于志浩 黎松林 施毅 王欣然

二维半导体过渡金属硫化物的逻辑集成器件

李卫胜, 周健, 王瀚宸, 汪树贤, 于志浩, 黎松林, 施毅, 王欣然
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  • 微电子器件沿摩尔定律持续发展超过50年,正面临着高功耗等挑战.二维层状材料可以将载流子限制在界面1 nm的空间内,部分材料展现出高迁移率、能带可调、拓扑奇异性等特点,有望给后摩尔时代微电子器件带来新的技术变革.其中,以MoS2为代表的过渡金属硫化物具有12 eV的带隙、良好的空气稳定性和工艺兼容性,在逻辑集成方面有巨大潜力.本文综述了二维过渡金属硫化物在逻辑器件领域的研究进展,重点讨论电子输运机理、迁移率、接触电阻等关键问题及集成技术的现状,并为今后的发展指出了方向.
      通信作者: 王欣然, xrwang@nju.edu.cn
    • 基金项目: 国家自然科学基金(批准号:61325020,61521001)和国家重点基础研究发展计划(批准号:2013CBA01604,2015CB351900)资助的课题.
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  • 收稿日期:  2017-09-11
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二维半导体过渡金属硫化物的逻辑集成器件

  • 1. 南京大学电子科学与工程学院, 固体微结构国家重点实验室, 人工微结构科学与技术协同创新中心, 南京 210093
  • 通信作者: 王欣然, xrwang@nju.edu.cn
    基金项目: 

    国家自然科学基金(批准号:61325020,61521001)和国家重点基础研究发展计划(批准号:2013CBA01604,2015CB351900)资助的课题.

摘要: 微电子器件沿摩尔定律持续发展超过50年,正面临着高功耗等挑战.二维层状材料可以将载流子限制在界面1 nm的空间内,部分材料展现出高迁移率、能带可调、拓扑奇异性等特点,有望给后摩尔时代微电子器件带来新的技术变革.其中,以MoS2为代表的过渡金属硫化物具有12 eV的带隙、良好的空气稳定性和工艺兼容性,在逻辑集成方面有巨大潜力.本文综述了二维过渡金属硫化物在逻辑器件领域的研究进展,重点讨论电子输运机理、迁移率、接触电阻等关键问题及集成技术的现状,并为今后的发展指出了方向.

English Abstract

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