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OBSERVATION ON “AS GROWN” MICRODEFECTS IN CZ SILICON SINGLE CRYSTAL

LIN RU-GAN ZHANG JIN-FU MAI ZHEN-HONG CUI SHU-FAN FU QUAN-GUI

OBSERVATION ON “AS GROWN” MICRODEFECTS IN CZ SILICON SINGLE CRYSTAL

LIN RU-GAN, ZHANG JIN-FU, MAI ZHEN-HONG, CUI SHU-FAN, FU QUAN-GUI
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  • Received Date:  02 March 1982
  • Published Online:  21 July 2005

OBSERVATION ON “AS GROWN” MICRODEFECTS IN CZ SILICON SINGLE CRYSTAL

  • 1. (1)中国科学院半导体研究所; (2)中国科学院物理研究所

Abstract: Two different type of microdefects have been observed by means of Cu-decorating X-ray topography and etching method in p-type silicon single crystal grown along and/or n-type ones grown along direction. A kind of defects with special configuration has also been found in n-type silicon single crystal. The distribution and configuration of these defects are discussed preliminarily.It was the first time to investigate the "as grown" microdefects in silicon single crystal grown by Czochraski method directly by means of X-ray transmission projection and/or section topography. X-ray topographs of microdefects in CZ silicon crystal were obtained. The configuration, size and distribution of the microdefects observed were in agreement with that obtained by Cu-decorating X-ray topography quite well.

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