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STUDY OF NEUTRON IRRADIATION-INDUCED DEFECTS IN n-TYPE VAPOR PHASE EPITAXY GaAs LAYERS

WU FENG-MEI WANG CHUN TANG JIE GONG BANG-RUI

STUDY OF NEUTRON IRRADIATION-INDUCED DEFECTS IN n-TYPE VAPOR PHASE EPITAXY GaAs LAYERS

WU FENG-MEI, WANG CHUN, TANG JIE, GONG BANG-RUI
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  • Received Date:  02 July 1987
  • Published Online:  06 July 2005

STUDY OF NEUTRON IRRADIATION-INDUCED DEFECTS IN n-TYPE VAPOR PHASE EPITAXY GaAs LAYERS

  • 1. (1)南京大学物理系; (2)南京电子器件研究所

Abstract: The characterization and thermal annealing behavior of deep-level defects in 1 MeV neutron irradiated VPE n-GaAs layers have been studied. The results indicate that the majority of induced defects are associated with displacement of two or more neighboring atoms. In addition, a new defect level E5(Ec-0.73 eV) emerges, as the H1 level anneals out, It is found that the changes of GaAs MESFET parameters are mainly due to the carrier removal.

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