Search

Article

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

ANALYSIS AND SIMULATION OF FLUORINE MIGRATION CHARACTERISTICS OF BF+2-IMPLANTED INTO POLYCRYSTALLINE SILICON GATE

ZHAO YUAN-FU ZHANG TING-QING LI JIAN-JUN LIU JIA-LU

ANALYSIS AND SIMULATION OF FLUORINE MIGRATION CHARACTERISTICS OF BF+2-IMPLANTED INTO POLYCRYSTALLINE SILICON GATE

ZHAO YUAN-FU, ZHANG TING-QING, LI JIAN-JUN, LIU JIA-LU
PDF
Get Citation

(PLEASE TRANSLATE TO ENGLISH

BY GOOGLE TRANSLATE IF NEEDED.)

Metrics
  • Abstract views:  2652
  • PDF Downloads:  538
  • Cited By: 0
Publishing process
  • Received Date:  06 August 1997
  • Accepted Date:  29 September 1997
  • Published Online:  20 April 1998

ANALYSIS AND SIMULATION OF FLUORINE MIGRATION CHARACTERISTICS OF BF+2-IMPLANTED INTO POLYCRYSTALLINE SILICON GATE

  • 1. (1)骊山微电子学研究所,临潼 710600; (2)西安电子科技大学微电子学研究所,西安 710071

Abstract: The migration equation of fluorine in polycrystalline silicon gate is presented on the basis of analysis for the migration characteristics of fluorine in polycrystalline silicon gate after BF+2 is implanted into polycrystalline silicon gate.The distribution of fluorine in polycrystalline silicon gate is simulated by the finite difference methods.The simulation results are in good agreement with the experiments.Under the condition of 80keV,2×1015cm-2BF+2 implanted into polycrystalline Si gate and then annealed at 900℃ for 30s,some important coefficients are given as follows: emisson coefficient of fluorine in polycrystalline silicon e=6×10-2s-1,diffusion coefficient of fluorine in grain boundary Db=7.64×10-12cm/s,absorption coefficient of fluorine in polycrystalline Si/SiO2 interface S1=1.74×10-3s-1 and damage absorption coefficient of fluorine in polycrystalline silicon S1=7.32×10-4s-1.

Catalog

    /

    返回文章
    返回