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Effect of pre-metallization processing and annealing on Ni/Au Schottky contacts in AlGaN/GaN heterostructures

Wang Chong Feng Qian Hao Yue Wan Hui

Effect of pre-metallization processing and annealing on Ni/Au Schottky contacts in AlGaN/GaN heterostructures

Wang Chong, Feng Qian, Hao Yue, Wan Hui
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  • Received Date:  17 February 2006
  • Accepted Date:  28 February 2006
  • Published Online:  20 November 2006

Effect of pre-metallization processing and annealing on Ni/Au Schottky contacts in AlGaN/GaN heterostructures

  • 1. 西安电子科技大学微电子研究所,西安 710071;宽禁带半导体材料与器件教育部重点实验室,西安 710071

Abstract: After pre-metallization processing of AlGaN/GaN heterostructure with O2 plasma and HF solution, the Ni/Au Schottky contact characteristics were improved obviously and reverse leakage current reduced by three orders. In addition, annealing experiments were carried out at 200—600℃ for 5min in N2 atmosphere on many batches of Schottky diodes, the reverse leakage current decreased further with annealing temperature increasing. Especially after annealing at 600℃ for 5min in N2 atmosphere, the better uniformity of C-V characteristics at different frequencies indicated that surface trap density was reduced when Ni diffused to AlGaN/GaN surface during annealing. On the other hand, the C-V curves moved to the right and the reduction of absolute value of 2D electron gas depletion voltage proved that the Schottky barrier height was elevated when the annealing temperature increased.

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