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Preparation of ZnMnO by ion implantation and its spectral characterization

Zhong Hong-Mei Chen Xiao-Shuang Wang Jin-Bin Xia Chang-Sheng Wang Shao-Wei Li Zhi-Feng Xu Wen-Lan Lu Wei

Preparation of ZnMnO by ion implantation and its spectral characterization

Zhong Hong-Mei, Chen Xiao-Shuang, Wang Jin-Bin, Xia Chang-Sheng, Wang Shao-Wei, Li Zhi-Feng, Xu Wen-Lan, Lu Wei
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  • PDF Downloads:  1038
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Publishing process
  • Received Date:  13 April 2005
  • Accepted Date:  10 November 2005
  • Published Online:  05 February 2006

Preparation of ZnMnO by ion implantation and its spectral characterization

  • 1. 中国科学院上海技术物理研究所红外物理国家重点实验室,上海 200083

Abstract: This paper reports the fabrication of ZnMnO semiconductor by high-dose Mn impla ntion. We studied the influence of implantation dose and annealing on its optica l properties. The broad band at 575cm-1 in Raman spectrum is attribut ed to defects related to high-dose Mn implantion. The vibration modes at 528cm-1 are considered to be associated with Mn impurities. Room temperature photoluminescence spectra show that the high-dose Mn implantion can enhance the intensity in visible band.

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