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Role of gas residence time in the deposition rate and properties of microcrystalline silicon films

Guo Qun-Chao Geng Xin-Hua Sun Jian Wei Chang-Chun Han Xiao-Yan Zhang Xiao_Dan Zhao Ying

Role of gas residence time in the deposition rate and properties of microcrystalline silicon films

Guo Qun-Chao, Geng Xin-Hua, Sun Jian Wei, Chang-Chun, Han Xiao-Yan, Zhang Xiao_Dan, Zhao Ying
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  • Received Date:  25 August 2006
  • Accepted Date:  13 October 2006
  • Published Online:  20 May 2007

Role of gas residence time in the deposition rate and properties of microcrystalline silicon films

  • 1. 南开大学光电子薄膜器件与技术研究所天津市重点实验室,光电信息技术科学教育部重点实验室,天津 300071

Abstract: To realize high deposition rate is an important problem in low-cost industrialization of microcrystalline silicon solar cells. Deposition of μc-Si:H films at a high rate was investigated using very-high-frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) in this paper. The influence of gas residence time on de position rate and the photoelectric and micro structural properties in the CVD process were studied by changing total gas flow. As a result, the efficiency of the microcrystalline silicon solar cell prepared at deposition rate 12?/s reached 5.3%.

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