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Grown-in oxygen precipitates in czochralski silicon investigated by transmission electron microscopy

Xu Jin Li Fu-Long Yang De-Ren

Grown-in oxygen precipitates in czochralski silicon investigated by transmission electron microscopy

Xu Jin, Li Fu-Long, Yang De-Ren
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  • The grown-in oxygen precipitates in conventional Czochralski (CZ) silicon and nitrogen-doped Czochralski (NCZ) silicon have been investigated by means of transmission electron microscopy (TEM). Tiny oxygen precipitates about 5nm in size were observed in the NCZ specimens. It is believed that the oxygen precipitates may have grown from the heterogeneous nuclei of nitrogen-related complexes formed at a low temperature of 650℃.
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  • Received Date:  10 November 2006
  • Accepted Date:  15 December 2006
  • Published Online:  20 July 2007

Grown-in oxygen precipitates in czochralski silicon investigated by transmission electron microscopy

  • 1. (1)厦门大学化学化工学院材料科学与工程系, 厦门 361005; (2)浙江大学硅材料国家重点实验室, 杭州 310027

Abstract: The grown-in oxygen precipitates in conventional Czochralski (CZ) silicon and nitrogen-doped Czochralski (NCZ) silicon have been investigated by means of transmission electron microscopy (TEM). Tiny oxygen precipitates about 5nm in size were observed in the NCZ specimens. It is believed that the oxygen precipitates may have grown from the heterogeneous nuclei of nitrogen-related complexes formed at a low temperature of 650℃.

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