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Observations on subband electron properties in In0.65Ga0.35As/In0.52Al0.48As MM-HEMT with Si δ-doped on the barriers

Cui Li-Jie Gao Hong-Ling Li Dong-Lin Lin Tie Shang Li-Yan Huang Zhi-Ming Zhu Bo Guo Shao-Ling Gui Yong-Sheng Zhou Wen-Zheng Chu Jun-Hao

Observations on subband electron properties in In0.65Ga0.35As/In0.52Al0.48As MM-HEMT with Si δ-doped on the barriers

Cui Li-Jie, Gao Hong-Ling, Li Dong-Lin, Lin Tie, Shang Li-Yan, Huang Zhi-Ming, Zhu Bo, Guo Shao-Ling, Gui Yong-Sheng, Zhou Wen-Zheng, Chu Jun-Hao
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  • Received Date:  05 September 2006
  • Accepted Date:  25 September 2006
  • Published Online:  20 July 2007

Observations on subband electron properties in In0.65Ga0.35As/In0.52Al0.48As MM-HEMT with Si δ-doped on the barriers

  • 1. (1)中国科学院半导体研究所,北京 100083; (2)中国科学院上海技术物理研究所红外物理国家重点实验室,上海 200083; (3)中国科学院上海技术物理研究所红外物理国家重点实验室,上海 200083;广西大学物理科学与工程技术学院,南宁 530004; (4)中国科学院上海技术物理研究所红外物理国家重点实验室,上海 200083;华东师范大学ECNU-SITP成像信息联合实验室,上海 200062

Abstract: Magneto-transport measurements have been carried out on a Si δ-doped In0.65Ga0.35As/In0.52Al0.48As metamorphic high-electron-mobility transistor with InP substrate in a temperature range between 1.5 and 60K under magnetic field up to 13T. We studied the Shubnikov-de Haas(SdH) effect and the Hall effect for the In0.65Ga0.35As/In0.52Al0.48As single quantum well occupied by two subbands and obtained the electron concentration and energy levels respectively. We solve the Schrdinger-Kohn-Sham equation in conjunction with the Poisson equation self-consistently and obtain the configuration of conduction band, the distribution of carriers concentration, the energy level of every subband and the Fermi energy. The calculational results are well consistent with the results of experiments. Both experimental and calculational results indicate that almost all of the δ-doped electrons transfer into the quantum well in the temperature range between 1.5 and 60K.

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