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A spectroscopic ellipsometry study of the abnormal scaling behavior of high-rate-deposited microcrystalline silicon films by VHF-PECVD technique

Gu Jin-Hua Ding Yan-Li Yang Shi-E Gao Xiao-Yong Chen Yong-Sheng Lu Jing-Xiao

A spectroscopic ellipsometry study of the abnormal scaling behavior of high-rate-deposited microcrystalline silicon films by VHF-PECVD technique

Gu Jin-Hua, Ding Yan-Li, Yang Shi-E, Gao Xiao-Yong, Chen Yong-Sheng, Lu Jing-Xiao
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  • Received Date:  24 June 2008
  • Accepted Date:  03 November 2008
  • Published Online:  20 June 2009

A spectroscopic ellipsometry study of the abnormal scaling behavior of high-rate-deposited microcrystalline silicon films by VHF-PECVD technique

  • 1. 郑州大学物理工程学院材料物理教育部重点实验室,郑州 450052

Abstract: The scaling behaviour of surface roughness evolution of high rate deposited μc-Si:H by very high frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) is investigated using spectroscopic ellipsometry (SE). Films deposited at Pg=300 Pa with deposition rate of 5 ?/s, show abnormal scaling behavior with the exponent β of about 0.81, which is much larger than 0.5 of zero diffusion limit in the scaling theory. This implies that there are some roughening increasing mechanisms, and this roughening increasing mechanism is correlated with the shadowing effect.

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