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Study on mechanism of current collapse and knee voltage drift for AlGaN/GaN HEMTs

Wang Lin Hu Wei-Da Chen Xiao-Shuang Lu Wei

Study on mechanism of current collapse and knee voltage drift for AlGaN/GaN HEMTs

Wang Lin, Hu Wei-Da, Chen Xiao-Shuang, Lu Wei
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  • In this article, we comprehensively showed the impact of barrier layer traps, buffer layer traps and surface charge on current collapse and knee voltage change, pointed out that the change in the concentration of surface charge and barrier layer traps have little influence on the 2DEG density in the channel.When the concentration of surface charge changes, the knee voltage drift and strength of current collapse are in close connection with the change of potential energy in quantum well.Buffer layer has stronger local effect than barrier layer, when the concentration of bulk traps change in these layers, knee voltage drift is mainly caused by the change of 2DEG density, but has less change compared with the situation of surface charge.Potential energy changes in the quantum well is an important reason for the change of knee voltage, the strength of current collapse is determined by the size of potential energy and 2DEG density.
    • Funds:
    [1]

    Braga N, Mickevicius R, Gaska R, Hu X, Shur M S, AsifKhan M, Simin G 2004 J. Appl. Phys. 95 6409

    [2]

    Chinese) [冯 倩、郝 跃、岳远征 2008 物理学报 57 1886]

    [3]

    Hu W D, Chen X S, Yin F, Zhang J B, Lu W 2009 J. Appl. Phys. 105 084502.

    [4]

    [席光义、任 凡、郝智彪、汪 莱、李洪涛、江 洋、赵 维、韩彦军、罗 毅 2008 物理学报 57 7238]

    [5]

    (Suzhou : Suzhou University Press) p53 (in Chinese) [施 敏 2008 半导体器件物理与工艺 (苏州: 苏州大学出版社) 第53页]

    [6]

    Hu W D, Chen X S, Quan Z J, Zhang X M, Huang Y, Xia C S, Lu W, Ye P D 2007 J. Appl. Phys. 102 034502

    [7]

    Knap W, Kachorovskii V, Deng Y, Rumyantsev S, Gaska R 2002 J. Appl. Phys. 91 9346

    [8]

    Hu W D, Chen X S, Quan Z J, Xia C S, Lu W, Ye P D 2006 Appl. Phys. Lett. 100 074501

    [9]

    Brag N, Mickevicius R, Gaska R, Shur M S, Asif K M, Simin G 2004 Appl. Phys. Lett. 85 4780

    [10]

    Vetury R, Naiqain Zhang Q, Stacia Keller, Mishra K U 2001 IEEE Trans. Electron Devices 48 560

    [11]

    Wei W, Lin R B, Feng Q, HaoY 2008 Acta. Phys. Sin. 57 467 (in Chinese) [魏 巍、林若兵、冯 倩、郝 跃 2008 物理学报 57 467]

    [12]

    Xi G Y, Ren F, Hao Z B, Wang L, Li H T, Jiang Y, Zhao W, Han Y J, Luo Y 2008 Acta. Phys. Sin. 57 7238 (in Chinese)

    [13]

    Kong Y C, Zheng Y D, Zhou C H, Deng Y Z, Gu S L, Shen B, Zhang R, Han P, Jiang R L, Shi Y 2004 Acta. Phys. Sin. 53 2320 (in Chinese) [孔月婵、郑有窦、周春红、邓永桢、顾书林、沈 波、张 荣、韩 平、江若琏、施 毅 2004 物理学报 53 2320]

    [14]

    Bykhovski A D, Gaska R, Shur M S 1998 Appl. Phys. Lett. 73 24

    [15]

    Liu L J, Yue Y Z, Zhang J C, Ma X H, Dong Z D, Hao Y 2009 Acta. Phys. Sin. 58 536 (in Chinese) [刘林杰、岳远征、张进城、马晓华、董作典、郝 跃 2009 物理学报 58 536]

    [16]

    Yu L S, Ying Q J, Qiao D, Lau S S, Boutros K S, Redwing J M 1998 Appl. Phys. Lett. 73 26

    [17]

    Mittereder J A, Binari S C, Klein P B, Roussos J A, Katzer D S, Storm D F 2003 Appl. Phys. Lett. 83 1650

    [18]

    Device simulator Sentaurus Device 2009 (formerly ISE-DESSIS), version Z-2009.3, Synopsys Inc., p15, 197

    [19]

    Sze M S 2008 Semiconductor Devices Physics and Technology

    [20]

    Feng Q, Hao Y, Yue Y Z 2008 Acta. Phys. Sin. 57 1886 (in

    [21]

    Zeng S R 2007 Semiconductor Devices Physics (Beijing : Peking University Press) p137 (in Chinese) [曾树荣 2007 半导体器件物理基础 (北京: 北京大学出版社) 第137页]

  • [1]

    Braga N, Mickevicius R, Gaska R, Hu X, Shur M S, AsifKhan M, Simin G 2004 J. Appl. Phys. 95 6409

    [2]

    Chinese) [冯 倩、郝 跃、岳远征 2008 物理学报 57 1886]

    [3]

    Hu W D, Chen X S, Yin F, Zhang J B, Lu W 2009 J. Appl. Phys. 105 084502.

    [4]

    [席光义、任 凡、郝智彪、汪 莱、李洪涛、江 洋、赵 维、韩彦军、罗 毅 2008 物理学报 57 7238]

    [5]

    (Suzhou : Suzhou University Press) p53 (in Chinese) [施 敏 2008 半导体器件物理与工艺 (苏州: 苏州大学出版社) 第53页]

    [6]

    Hu W D, Chen X S, Quan Z J, Zhang X M, Huang Y, Xia C S, Lu W, Ye P D 2007 J. Appl. Phys. 102 034502

    [7]

    Knap W, Kachorovskii V, Deng Y, Rumyantsev S, Gaska R 2002 J. Appl. Phys. 91 9346

    [8]

    Hu W D, Chen X S, Quan Z J, Xia C S, Lu W, Ye P D 2006 Appl. Phys. Lett. 100 074501

    [9]

    Brag N, Mickevicius R, Gaska R, Shur M S, Asif K M, Simin G 2004 Appl. Phys. Lett. 85 4780

    [10]

    Vetury R, Naiqain Zhang Q, Stacia Keller, Mishra K U 2001 IEEE Trans. Electron Devices 48 560

    [11]

    Wei W, Lin R B, Feng Q, HaoY 2008 Acta. Phys. Sin. 57 467 (in Chinese) [魏 巍、林若兵、冯 倩、郝 跃 2008 物理学报 57 467]

    [12]

    Xi G Y, Ren F, Hao Z B, Wang L, Li H T, Jiang Y, Zhao W, Han Y J, Luo Y 2008 Acta. Phys. Sin. 57 7238 (in Chinese)

    [13]

    Kong Y C, Zheng Y D, Zhou C H, Deng Y Z, Gu S L, Shen B, Zhang R, Han P, Jiang R L, Shi Y 2004 Acta. Phys. Sin. 53 2320 (in Chinese) [孔月婵、郑有窦、周春红、邓永桢、顾书林、沈 波、张 荣、韩 平、江若琏、施 毅 2004 物理学报 53 2320]

    [14]

    Bykhovski A D, Gaska R, Shur M S 1998 Appl. Phys. Lett. 73 24

    [15]

    Liu L J, Yue Y Z, Zhang J C, Ma X H, Dong Z D, Hao Y 2009 Acta. Phys. Sin. 58 536 (in Chinese) [刘林杰、岳远征、张进城、马晓华、董作典、郝 跃 2009 物理学报 58 536]

    [16]

    Yu L S, Ying Q J, Qiao D, Lau S S, Boutros K S, Redwing J M 1998 Appl. Phys. Lett. 73 26

    [17]

    Mittereder J A, Binari S C, Klein P B, Roussos J A, Katzer D S, Storm D F 2003 Appl. Phys. Lett. 83 1650

    [18]

    Device simulator Sentaurus Device 2009 (formerly ISE-DESSIS), version Z-2009.3, Synopsys Inc., p15, 197

    [19]

    Sze M S 2008 Semiconductor Devices Physics and Technology

    [20]

    Feng Q, Hao Y, Yue Y Z 2008 Acta. Phys. Sin. 57 1886 (in

    [21]

    Zeng S R 2007 Semiconductor Devices Physics (Beijing : Peking University Press) p137 (in Chinese) [曾树荣 2007 半导体器件物理基础 (北京: 北京大学出版社) 第137页]

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  • Received Date:  18 November 2009
  • Accepted Date:  14 December 2009
  • Published Online:  15 August 2010

Study on mechanism of current collapse and knee voltage drift for AlGaN/GaN HEMTs

  • 1. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083, China

Abstract: In this article, we comprehensively showed the impact of barrier layer traps, buffer layer traps and surface charge on current collapse and knee voltage change, pointed out that the change in the concentration of surface charge and barrier layer traps have little influence on the 2DEG density in the channel.When the concentration of surface charge changes, the knee voltage drift and strength of current collapse are in close connection with the change of potential energy in quantum well.Buffer layer has stronger local effect than barrier layer, when the concentration of bulk traps change in these layers, knee voltage drift is mainly caused by the change of 2DEG density, but has less change compared with the situation of surface charge.Potential energy changes in the quantum well is an important reason for the change of knee voltage, the strength of current collapse is determined by the size of potential energy and 2DEG density.

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