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Fabrication and luminescence properties of Si quantum dots based on Si-rich SiNx/N-rich SiNy multilayer

Song Jie Ding Hong-Lin Wang Xiang Guo Yan-Qing Huang Rui Wang Dan-Qing Chen Kun-Ji Xu Jun Li Wei Ma Zhong-Yuan

Fabrication and luminescence properties of Si quantum dots based on Si-rich SiNx/N-rich SiNy multilayer

Song Jie, Ding Hong-Lin, Wang Xiang, Guo Yan-Qing, Huang Rui, Wang Dan-Qing, Chen Kun-Ji, Xu Jun, Li Wei, Ma Zhong-Yuan
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  • Received Date:  22 September 2009
  • Accepted Date:  22 March 2010
  • Published Online:  15 August 2010

Fabrication and luminescence properties of Si quantum dots based on Si-rich SiNx/N-rich SiNy multilayer

  • 1. (1)Department of Physics and Electrical Engineering, Hanshan Normal University, Chaozhou 521041, China; (2)State Key Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China

Abstract: SiN-based multilayers were prepared in a plasma enhanced chemical vapor deposition system followed by subsequently thermal annealing and laser irradiation with the aim of fabrication three-dimensional constrained, size-controlled and well-regulated Si nanocrystals. The experimental results show that Si nanocrystals grow in the Si-rich SiN sublayer. Furthermore, the grain size can be controlled according to the thick of Si-rich SiN. It is also found that the crystalline fraction of the multilayers irradiated by laser is significantly higher than that by thermal annealing. The devices that employing the laser-irradiated multilayer as luminescent active layer exhibit an enhanced visible electroluminescence and the external quantum efficiency is improved by 40% in comparison with the device without annealing.

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