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Photoemission stability of negative electronaffinity GaN phtocathode

Guo Xiang-Yang Chang Ben-Kang Wang Xiao-Hui Zhang Yi-Jun Yang Ming

Photoemission stability of negative electronaffinity GaN phtocathode

Guo Xiang-Yang, Chang Ben-Kang, Wang Xiao-Hui, Zhang Yi-Jun, Yang Ming
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  • The spectral response and quantum yield curve of reflection mode GaN photocathode just after Cs, O activation and Cs reactivation was achieved by using the online multi-information measurement and evaluation system. Also the attenuation in photocurrent under the radiation of 300 nm light is measured every hour.The result indicates that GaN photcathdoe are much more stable than narrow band material. The photocurrent peak increased by 16.8% after Cs reactivation which demonstrates the reason of the QE attenuation is the Cs desorption on the Cs, O adlayer of surface. This can be explained by a double dipole layer model :Cs-O whose stability determines the stability of GaN photocathode.
    • Funds:
    [1]

    Shahedipour F S, Ulmer M P, Wessels B W, Joseph C L, Nihashi T 2002 IEEE J. Quantum Electron. 38 333

    [2]

    Machuca F, Liu Y S Z, Pianetta P, Spicer W E, Pease R F W 2003 J.Vac. Sci. Technol. B 21 1863

    [3]

    Niigaki M, Hirohata T, Mochizuki T, Uchiyama S, Kan H, Hiruma T 1998 Jpn. J. Appl. Phys. Part 2 37 L1531

    [4]

    Niigaki M, Hirohata T, Mochizuki T, Uchiyama S, Kan H, Hiruma T 1999 Appl. Phys. Lett. 75 3533

    [5]

    Qiao J L, Tian S, Chang B K, Du X Q, Gao P 2009 Acta Phys. Sin. 58 5847 (in Chinese) [乔建良、田 思、常本康、杜晓晴、高 频 2009 物理学报 58 5847]

    [6]

    Qiao J L, Chang B K, Du X Q, Niu J, Zou J J 2010 Acta Phys. Sin. 59 2855 (in Chinese) [乔建良、常本康、杜晓晴、牛 军、邹继军 2010 物理学报 59 2855]

    [7]

    Calabres R, Guidi V, Lenisa P, Maciga B, Ciullo G, Della G, Egeni G P, Lamanna G, Rigato V, Rudello V, Yang B, Zandolin S, Tecchio L 1994 Appl. Phys. Lett. 65 301

    [8]

    Calabres R, Ciullo G, Guidi V, Lamanna G, Lenisa P, Maciga B, Tecchio L, Yang B 1994 Rev. Sci. Instrum. 65 343

    [9]

    Zou J J, Chang B K, Yang Z,Qiao J L, Zeng Y P 2008 Appl. Phys. Lett. 92 172102-1

    [10]

    Machuca F, Liu Z, Sun Y 2002 J. Vac. Sci. Technol. B 20 2721

    [11]

    Pankove J I, Schacle H 1974 Appl. Phys. Lett. 25 53

    [12]

    Guo T L, Gao H R 1982 Proc. SPIE 127 1993

    [13]

    Elamrawi K A 1999 Ph. D. Dissertation (Norfolk Old Dominion University)

    [14]

    Du X Q, Chang B K 2009 Acta phys. Sin. 58 8643 (in Chinese) [杜晓晴、常本康 2009 物理学报 58 8643]

    [15]

    James L W 1974 J. Appl. Phys. 45 1326

    [16]

    Fisher D G, Enstrom R E, Escher J S, Williams B F 1972 J. Appl. Phys. 43 3815

    [17]

    Liu Y Z, Wang Z C, Dong Y Q 1995 Electron Emission and Photocathode (Beijing:Beijing University of Science and Technology Press) 308—327 (in Chinese) [刘元震、王仲春、董亚强 1995 电子发射与光电阴极(北京:北京理工大学出版社)第308—327页]

    [18]

    Zou J J, Chen H L, Chang B K 2006 Acta Opt. Sin. 26 1400 (in Chinese) [邹继军、陈怀林、常本康 2006 光学学报 26 1400]

    [19]

    Tremsin A, Siegmcend O H W 2005 Proc. of SPIE 59200I-1

    [20]

    Zou J J, Chang B K, Du X Q 2007 Spectroscopy and Spectral Anaysis 27 1465 (in Chinese) [邹继军、常本康、杜晓晴 2007 光谱学与光谱分析 27 1465]

  • [1]

    Shahedipour F S, Ulmer M P, Wessels B W, Joseph C L, Nihashi T 2002 IEEE J. Quantum Electron. 38 333

    [2]

    Machuca F, Liu Y S Z, Pianetta P, Spicer W E, Pease R F W 2003 J.Vac. Sci. Technol. B 21 1863

    [3]

    Niigaki M, Hirohata T, Mochizuki T, Uchiyama S, Kan H, Hiruma T 1998 Jpn. J. Appl. Phys. Part 2 37 L1531

    [4]

    Niigaki M, Hirohata T, Mochizuki T, Uchiyama S, Kan H, Hiruma T 1999 Appl. Phys. Lett. 75 3533

    [5]

    Qiao J L, Tian S, Chang B K, Du X Q, Gao P 2009 Acta Phys. Sin. 58 5847 (in Chinese) [乔建良、田 思、常本康、杜晓晴、高 频 2009 物理学报 58 5847]

    [6]

    Qiao J L, Chang B K, Du X Q, Niu J, Zou J J 2010 Acta Phys. Sin. 59 2855 (in Chinese) [乔建良、常本康、杜晓晴、牛 军、邹继军 2010 物理学报 59 2855]

    [7]

    Calabres R, Guidi V, Lenisa P, Maciga B, Ciullo G, Della G, Egeni G P, Lamanna G, Rigato V, Rudello V, Yang B, Zandolin S, Tecchio L 1994 Appl. Phys. Lett. 65 301

    [8]

    Calabres R, Ciullo G, Guidi V, Lamanna G, Lenisa P, Maciga B, Tecchio L, Yang B 1994 Rev. Sci. Instrum. 65 343

    [9]

    Zou J J, Chang B K, Yang Z,Qiao J L, Zeng Y P 2008 Appl. Phys. Lett. 92 172102-1

    [10]

    Machuca F, Liu Z, Sun Y 2002 J. Vac. Sci. Technol. B 20 2721

    [11]

    Pankove J I, Schacle H 1974 Appl. Phys. Lett. 25 53

    [12]

    Guo T L, Gao H R 1982 Proc. SPIE 127 1993

    [13]

    Elamrawi K A 1999 Ph. D. Dissertation (Norfolk Old Dominion University)

    [14]

    Du X Q, Chang B K 2009 Acta phys. Sin. 58 8643 (in Chinese) [杜晓晴、常本康 2009 物理学报 58 8643]

    [15]

    James L W 1974 J. Appl. Phys. 45 1326

    [16]

    Fisher D G, Enstrom R E, Escher J S, Williams B F 1972 J. Appl. Phys. 43 3815

    [17]

    Liu Y Z, Wang Z C, Dong Y Q 1995 Electron Emission and Photocathode (Beijing:Beijing University of Science and Technology Press) 308—327 (in Chinese) [刘元震、王仲春、董亚强 1995 电子发射与光电阴极(北京:北京理工大学出版社)第308—327页]

    [18]

    Zou J J, Chen H L, Chang B K 2006 Acta Opt. Sin. 26 1400 (in Chinese) [邹继军、陈怀林、常本康 2006 光学学报 26 1400]

    [19]

    Tremsin A, Siegmcend O H W 2005 Proc. of SPIE 59200I-1

    [20]

    Zou J J, Chang B K, Du X Q 2007 Spectroscopy and Spectral Anaysis 27 1465 (in Chinese) [邹继军、常本康、杜晓晴 2007 光谱学与光谱分析 27 1465]

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Publishing process
  • Received Date:  07 June 2010
  • Accepted Date:  25 August 2010
  • Published Online:  15 May 2011

Photoemission stability of negative electronaffinity GaN phtocathode

  • 1. Department of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science & Technology, Nanjing 210094, China

Abstract: The spectral response and quantum yield curve of reflection mode GaN photocathode just after Cs, O activation and Cs reactivation was achieved by using the online multi-information measurement and evaluation system. Also the attenuation in photocurrent under the radiation of 300 nm light is measured every hour.The result indicates that GaN photcathdoe are much more stable than narrow band material. The photocurrent peak increased by 16.8% after Cs reactivation which demonstrates the reason of the QE attenuation is the Cs desorption on the Cs, O adlayer of surface. This can be explained by a double dipole layer model :Cs-O whose stability determines the stability of GaN photocathode.

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