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Measurement of the hole mobility in the blend system by space charge limited current

Yu Huang-Zhong

Measurement of the hole mobility in the blend system by space charge limited current

Yu Huang-Zhong,
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  • The measurement of carrier mobility in organic semiconductor material and device is one of important study contents. The hole-only devices based on the different solvent blends of poly (3-hexylthiophene) (P3HT) and [6, 6]-phenyl C61-butyric acid methyl ester (PCBM) as acceptor are fabricated, the structures of the devices are all ITO/PEDOT:PSS/P3HT:PCBM/Au. The hole mobilities in the blend systems with different solvents and various annealing treatments are measured by the space charge limited current method. The results show that the J-V curves of charge transfer in the devices meet Mott-Gurney equation, the hole mobilities in the active layer with different solvents are different, the active layer formed with high boiling point solvent 1, 2-dichlorobenzene possesses higher hole mobility, heat treatment contributes to the improvement of the hole mobility in the devices. The reason of change of hole mobility is analyzed.
      Corresponding author: , hzhyu@scut.edu.cn
    • Funds: Project supported by the National Natural Science Foundation of China (Grant No. 61176061), the Foundation of State Key Laboratory of Subtropical Building Science, China (Grant No. 2010KB20), the Foundation of Key Laboratory of Renewable Energy and Gas Hydrate, Chinese Academy of Sciences (Grant No. 0907K5), and the Innovation Experimental Program for Undergraduate Students of Guangdong Province, China (Grant No. S1010561076 ).
    [1]

    Liu J C, Wang W L, Yu H Z, Wu Z L, Peng J B, Cao Y 2008 Sol. Energy Mater. Sol. Cells 92 1403

    [2]

    Liang Y, Xu Z, Xia J, Tsai S, Wu Y, Li G, Ray C, Yu L 2010 Adv. Mater. 22 1

    [3]

    He Y J, Chen H Y, Hou J H, Li Y F 2010 J. Am. Chem. Soc. 132 1377

    [4]

    Wang Y, Hou Y B, Tang A W, Feng Z H, Feng B, Li Y, Teng F 2009 Nanoscale Res. Lett. 4 674

    [5]

    Yu H Z, Peng J B 2008 Org. Electron. 9 1022

    [6]

    Li Y F, Zou Y P 2008 Adv. Mater. 20 2952

    [7]

    Sang G Y, Zou Y P, Huang Y, Zhao G J, Yang Y, Li Y F 2009 Appl. Phys. Lett. 94 193302

    [8]

    Yu H Z, Wen Y X 2011 Acta Phys. Sin. 60 038401 (in Chinese) [於黄忠, 温源鑫 2011 物理学报 60 038401]

    [9]

    Yu H Z, Zhou X M, Deng J Y 2011 Acta Phys. Sin. 60 077206 (in Chinese) [於黄忠, 周晓明, 邓俊裕 2011 物理学报 60 077206]

    [10]

    Zhou Y H, Yang Z F, Wu W C, Xia H J, Wen S P, Tian W J 2007 Chin. Phys. B 16 2136

    [11]

    Feng Z H, Hou Y B, Shi Q M, Qin L F, Li Y, Zhang L, Liu X J, Teng F, Wang Y S, Xia R D 2010 Chin. Phys. B 19 038601

    [12]

    Peng B, Guo X, Cui C H, Zou Y P, Pan C Y, Li Y F 2011 Appl. Phys. Lett. 98 243308

    [13]

    Sun Y M, Seo J H, Takacs C J, Seifter J, Heeger A J 2011 Adv. Mater. 23 1679

    [14]

    Yu H Z 2010 Synth. Met. 160 2505

    [15]

    Blom P W M, Mihailetchi V D, Koster L J A, Markov D E 2007 Adv. Mater. 19 1551

    [16]

    Zhang Y A, Blom P W M 2010 Appl. Phys. Lett. 97 083303

    [17]

    Nicolai H T, Wetzelaer G A H, Kuik M, Kronemeijer A J, Boer B D, Blom P W M 2010 Appl. Phys. Lett. 96 172107

    [18]

    Lenes M, Morana M, Brabec C J, Blom P W M 2009 Adv. Funct. Mater. 19 1106

    [19]

    Yu H Z, Peng J B 2008 Chin. Phys. B 17 3143

    [20]

    Mihailetchi V D, Xie H X, Boer B D, Popescu L M, Hummelen J C, Blom P W M 2006 Appl. Phys. Lett. 89 012107

    [21]

    Li G, Shrotriya V, Huang J S, Yao Y, Moriarty T, Emery K, Yang Y 2005 Nat. Mater. 4 864

    [22]

    Ma W L, Yang C Y, Gong X, Lee K, Heeger A J 2005 Adv. Funct. Mater. 15 1617

    [23]

    Yu H Z, Peng J B 2008 Chin. Phys. Lett. 25 1411

    [24]

    Zhao Y, Xie Z Y, Qu Y, Geng Y H, Wang L X 2007 Appl. Phys. Lett. 90 043504

  • [1]

    Liu J C, Wang W L, Yu H Z, Wu Z L, Peng J B, Cao Y 2008 Sol. Energy Mater. Sol. Cells 92 1403

    [2]

    Liang Y, Xu Z, Xia J, Tsai S, Wu Y, Li G, Ray C, Yu L 2010 Adv. Mater. 22 1

    [3]

    He Y J, Chen H Y, Hou J H, Li Y F 2010 J. Am. Chem. Soc. 132 1377

    [4]

    Wang Y, Hou Y B, Tang A W, Feng Z H, Feng B, Li Y, Teng F 2009 Nanoscale Res. Lett. 4 674

    [5]

    Yu H Z, Peng J B 2008 Org. Electron. 9 1022

    [6]

    Li Y F, Zou Y P 2008 Adv. Mater. 20 2952

    [7]

    Sang G Y, Zou Y P, Huang Y, Zhao G J, Yang Y, Li Y F 2009 Appl. Phys. Lett. 94 193302

    [8]

    Yu H Z, Wen Y X 2011 Acta Phys. Sin. 60 038401 (in Chinese) [於黄忠, 温源鑫 2011 物理学报 60 038401]

    [9]

    Yu H Z, Zhou X M, Deng J Y 2011 Acta Phys. Sin. 60 077206 (in Chinese) [於黄忠, 周晓明, 邓俊裕 2011 物理学报 60 077206]

    [10]

    Zhou Y H, Yang Z F, Wu W C, Xia H J, Wen S P, Tian W J 2007 Chin. Phys. B 16 2136

    [11]

    Feng Z H, Hou Y B, Shi Q M, Qin L F, Li Y, Zhang L, Liu X J, Teng F, Wang Y S, Xia R D 2010 Chin. Phys. B 19 038601

    [12]

    Peng B, Guo X, Cui C H, Zou Y P, Pan C Y, Li Y F 2011 Appl. Phys. Lett. 98 243308

    [13]

    Sun Y M, Seo J H, Takacs C J, Seifter J, Heeger A J 2011 Adv. Mater. 23 1679

    [14]

    Yu H Z 2010 Synth. Met. 160 2505

    [15]

    Blom P W M, Mihailetchi V D, Koster L J A, Markov D E 2007 Adv. Mater. 19 1551

    [16]

    Zhang Y A, Blom P W M 2010 Appl. Phys. Lett. 97 083303

    [17]

    Nicolai H T, Wetzelaer G A H, Kuik M, Kronemeijer A J, Boer B D, Blom P W M 2010 Appl. Phys. Lett. 96 172107

    [18]

    Lenes M, Morana M, Brabec C J, Blom P W M 2009 Adv. Funct. Mater. 19 1106

    [19]

    Yu H Z, Peng J B 2008 Chin. Phys. B 17 3143

    [20]

    Mihailetchi V D, Xie H X, Boer B D, Popescu L M, Hummelen J C, Blom P W M 2006 Appl. Phys. Lett. 89 012107

    [21]

    Li G, Shrotriya V, Huang J S, Yao Y, Moriarty T, Emery K, Yang Y 2005 Nat. Mater. 4 864

    [22]

    Ma W L, Yang C Y, Gong X, Lee K, Heeger A J 2005 Adv. Funct. Mater. 15 1617

    [23]

    Yu H Z, Peng J B 2008 Chin. Phys. Lett. 25 1411

    [24]

    Zhao Y, Xie Z Y, Qu Y, Geng Y H, Wang L X 2007 Appl. Phys. Lett. 90 043504

  • [1] The physics-based model of AlGaN/GaN high electron mobility transistor outer fringing capacitances. Acta Physica Sinica, 2020, (): . doi: 10.7498/aps.69.20191931
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Publishing process
  • Received Date:  08 May 2011
  • Accepted Date:  28 April 2012
  • Published Online:  20 April 2012

Measurement of the hole mobility in the blend system by space charge limited current

    Corresponding author: hzhyu@scut.edu.cn
  • 1. State Key Laboratory of Subtropical Building Science, Department of Physics, South China University of Technology, Guangzhou 510640, China;
  • 2. Key Laboratory of Renewable Energy and Gas Hydrate, Chinese Academy of Sciences, Guangzhou 510640, China
Fund Project:  Project supported by the National Natural Science Foundation of China (Grant No. 61176061), the Foundation of State Key Laboratory of Subtropical Building Science, China (Grant No. 2010KB20), the Foundation of Key Laboratory of Renewable Energy and Gas Hydrate, Chinese Academy of Sciences (Grant No. 0907K5), and the Innovation Experimental Program for Undergraduate Students of Guangdong Province, China (Grant No. S1010561076 ).

Abstract: The measurement of carrier mobility in organic semiconductor material and device is one of important study contents. The hole-only devices based on the different solvent blends of poly (3-hexylthiophene) (P3HT) and [6, 6]-phenyl C61-butyric acid methyl ester (PCBM) as acceptor are fabricated, the structures of the devices are all ITO/PEDOT:PSS/P3HT:PCBM/Au. The hole mobilities in the blend systems with different solvents and various annealing treatments are measured by the space charge limited current method. The results show that the J-V curves of charge transfer in the devices meet Mott-Gurney equation, the hole mobilities in the active layer with different solvents are different, the active layer formed with high boiling point solvent 1, 2-dichlorobenzene possesses higher hole mobility, heat treatment contributes to the improvement of the hole mobility in the devices. The reason of change of hole mobility is analyzed.

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