Search

Article

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

Preparation and characteristic of phase transition vanadium oxide thin films by rapid thermal process

Wu Bin Hu Ming Hou Shun-Bao Lü Zhi-Jun Gao Wang Liang Ji-Ran

Preparation and characteristic of phase transition vanadium oxide thin films by rapid thermal process

Wu Bin, Hu Ming, Hou Shun-Bao, Lü Zhi-Jun, Gao Wang, Liang Ji-Ran
PDF
Get Citation
  • Metal-insulator phase transition VOX thin film is fabricated on a Si 100 substrate after the metal V thin film, prepared by direct current facing targets magnetron sputtering has been rapidly thermally treated first in pure oxygen environment and then in pure nitrogen environment. The thermal treatment conditions are 430℃/40 s, 450℃/40 s, 470℃/40 s, 450℃/30 s, 450℃/50 s in pure oxygen environment and 500℃/15 s in pure nitrogen environment. XRD, XPS, AFM and SEM are imployed to analyze the crystalline structure, valentstate and the components, morphology of the thin film. The electrical and optical characteristic of the thin film are analyzed by the Four-point probe method and THz time domain spectrum technology. Results reveal that after 450℃/40 s rapid thermal treatment in pure oxygen environment the metal V thin film turns into VOX thin film which has low properties of phase transition. Before and after heating, the change of resistivity reaches 2 orders of magnitude and the range of the THz transmission intensity shows smooth change. In order to improve the properties of phase transition, the VOX thin film is treated by 500℃/15 s rapid thermal process in pure nitrogen environment. After that, we find that the thin film shows a good phase transition performance, accompanied by a sheet square resistance drop of above 3 orders of magnitude and a 56.33% reduction in THz transmission intensity.
    • Funds: Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 61101055) and the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20100032120029).
    [1]

    Morin F J 1959 Phys. Rev. Lett. 3 34

    [2]

    Song T T, He J, Lin L B, Chen J 2010 Acta Phys. Sin. 59 6480 (in Chinese) [宋婷婷, 何捷, 林理彬, 陈军 2010 物理学报 59 6480]

    [3]

    Xu G, Jin P, Tazawa M, Yoshimura K Solar 2004 Energy Materials & Solar Cells 83 29

    [4]

    Chen C H, Yi X J, Zhao X R, Xiong B F 2001 Sensor and Actuators A 90 212

    [5]

    Lee J S, Ortolani M, Schade U 2007 Appl. Phys. Lett. 91 133509

    [6]

    Tsai K Y, Wu F H, Shieh H P D, Chin T S 2006 Materials Chemistry and Physics 96 331

    [7]

    Al-Kuhaili M F, Khawaja E E, Ingram D C, Durrani S M A 2004 Thin Solid Films 460 30

    [8]

    Lv Y Q, Hu M, Wu M, Liu Z G 2007 Surface & Coatings Technology 201 4969

    [9]

    Kim D H, Kwok H S 1994 Appl. Phys. Lett. 65 3188

    [10]

    Yuan N Y, Li J H, Lin C L 2002 Acta Phys. Sin. 51 852 (in Chinese) [袁宁一, 李盎华, 林成鲁 2002 物理学报 51 852]

    [11]

    Miyazaki H, Yasui I 2006 Appl. Surface Science 252 8367

    [12]

    Liang J R, Hu M, Wang X D, Li G K, Ji A, Yang F H, Liu J, Wu N J, Chen H D 2009 Acta Phys. Chim. Sin. 25 1523 (in Chinese) [梁继然, 胡明, 王晓东, 李贵柯, 季安, 杨富华, 刘剑, 吴南健, 陈弘达 2009 物理化学学报 25 1523]

    [13]

    Griffiths C H, Eastwood H K 1974 Appl. Phys. 45 2201

    [14]

    Zhang H, Liu Y S, Liu W H, Wang B Y, Wei L 2007 Acta Phys. Sin. 56 7255 (in Chinese) [张辉, 刘应书, 刘文海, 王宝义, 魏龙 2007 物理学报 56 7255]

    [15]

    Hou S B, Hu M, Lü Z J, Liang J R, Chen T 2012 Chinese Journal of Lasers 39 0107002 (in Chinese) [后顺保, 胡明, 吕志军, 梁继然, 陈涛 2012 中国激光 39 0107002]

    [16]

    Brassard D, Fourmaux S, Jean-Jacques M, Kieffer J C, El Khakani M A 2005 Appl. Phys. Lett. 87 051910

    [17]

    Alov N, Kutsko D, Spirovova I, Bastl Z 2006 Surface Science 600 1628

    [18]

    Qazilbash M M, Brehm M, Chae B G, Ho P C, Andreev G O, Kim B J, Yun S J, Balatsky A V, Maple M B, Keilmann F, Kim H T, Basov D N 2007 Science 318 1750

  • [1]

    Morin F J 1959 Phys. Rev. Lett. 3 34

    [2]

    Song T T, He J, Lin L B, Chen J 2010 Acta Phys. Sin. 59 6480 (in Chinese) [宋婷婷, 何捷, 林理彬, 陈军 2010 物理学报 59 6480]

    [3]

    Xu G, Jin P, Tazawa M, Yoshimura K Solar 2004 Energy Materials & Solar Cells 83 29

    [4]

    Chen C H, Yi X J, Zhao X R, Xiong B F 2001 Sensor and Actuators A 90 212

    [5]

    Lee J S, Ortolani M, Schade U 2007 Appl. Phys. Lett. 91 133509

    [6]

    Tsai K Y, Wu F H, Shieh H P D, Chin T S 2006 Materials Chemistry and Physics 96 331

    [7]

    Al-Kuhaili M F, Khawaja E E, Ingram D C, Durrani S M A 2004 Thin Solid Films 460 30

    [8]

    Lv Y Q, Hu M, Wu M, Liu Z G 2007 Surface & Coatings Technology 201 4969

    [9]

    Kim D H, Kwok H S 1994 Appl. Phys. Lett. 65 3188

    [10]

    Yuan N Y, Li J H, Lin C L 2002 Acta Phys. Sin. 51 852 (in Chinese) [袁宁一, 李盎华, 林成鲁 2002 物理学报 51 852]

    [11]

    Miyazaki H, Yasui I 2006 Appl. Surface Science 252 8367

    [12]

    Liang J R, Hu M, Wang X D, Li G K, Ji A, Yang F H, Liu J, Wu N J, Chen H D 2009 Acta Phys. Chim. Sin. 25 1523 (in Chinese) [梁继然, 胡明, 王晓东, 李贵柯, 季安, 杨富华, 刘剑, 吴南健, 陈弘达 2009 物理化学学报 25 1523]

    [13]

    Griffiths C H, Eastwood H K 1974 Appl. Phys. 45 2201

    [14]

    Zhang H, Liu Y S, Liu W H, Wang B Y, Wei L 2007 Acta Phys. Sin. 56 7255 (in Chinese) [张辉, 刘应书, 刘文海, 王宝义, 魏龙 2007 物理学报 56 7255]

    [15]

    Hou S B, Hu M, Lü Z J, Liang J R, Chen T 2012 Chinese Journal of Lasers 39 0107002 (in Chinese) [后顺保, 胡明, 吕志军, 梁继然, 陈涛 2012 中国激光 39 0107002]

    [16]

    Brassard D, Fourmaux S, Jean-Jacques M, Kieffer J C, El Khakani M A 2005 Appl. Phys. Lett. 87 051910

    [17]

    Alov N, Kutsko D, Spirovova I, Bastl Z 2006 Surface Science 600 1628

    [18]

    Qazilbash M M, Brehm M, Chae B G, Ho P C, Andreev G O, Kim B J, Yun S J, Balatsky A V, Maple M B, Keilmann F, Kim H T, Basov D N 2007 Science 318 1750

  • [1] Zhang Song-Ran, He Dai-Hua, Tu Hua-Yao, Sun yan, Kang Ting-Ting, Dai Ning, Chu Jun-Hao, Yu Guo-Lin. Magnetotransport properties and stress control of HgCdTe thin film. Acta Physica Sinica, 2020, 69(5): 057301. doi: 10.7498/aps.69.20191330
    [2] Liu Xiang, Mi Wen-Bo. Structure, Magnetic and Transport Properties of Fe3O4 near Verwey Transition. Acta Physica Sinica, 2020, 69(4): 040505. doi: 10.7498/aps.69.20191763
    [3] Effect of Swift Heavy Ions Irradiation on the Microstructure and Current-Carrying Capability in YBa2Cu3O7-δ High Temperature Superconductor Films. Acta Physica Sinica, 2020, (): . doi: 10.7498/aps.69.20191914
    [4] High-speed and large-scale light-sheet microscopy with electrically tunable lens. Acta Physica Sinica, 2020, (): . doi: 10.7498/aps.69.20191908
    [5] Yang Jian-Gang, Hu Chun-Bo, Zhu Xiao-Fei, Li Yue, Hu Xu, Deng Zhe. Experiment Study of Characteristics of Powder Pneumatic Filling. Acta Physica Sinica, 2020, 69(4): 048102. doi: 10.7498/aps.69.20191273
    [6] Analysis of Coherent Combination Characteristics of Beam Array via Tight Focusing. Acta Physica Sinica, 2020, (): . doi: 10.7498/aps.69.20200034
    [7] Xu Xian-Da, Zhao Lei, Sun Wei-Feng. First-principles on the energy band mechanism for modifying conduction property of graphene nanomeshes. Acta Physica Sinica, 2020, 69(4): 047101. doi: 10.7498/aps.69.20190657
    [8] The influence of the secondary electron emission characteristic of dielectric materials on the microwave breakdown. Acta Physica Sinica, 2020, (): . doi: 10.7498/aps.69.20200026
    [9] Molecular dynamics study on structural characteristics of Lennard-Jones supercritical fluids. Acta Physica Sinica, 2020, (): . doi: 10.7498/aps.69.20191591
    [10] Wu Mei-Mei, Zhang Chao, Zhang Can, Sun Qian-Qian, Liu Mei. Surface enhanced Raman scattering characteristics of three-dimensional pyramid stereo composite substrate. Acta Physica Sinica, 2020, 69(5): 058101. doi: 10.7498/aps.69.20191636
    [11] Liu Jia-He, Lu Jia-Zhe, Lei Jun-Jie, Gao Xun, Lin Jing-Quan. Effect of ambient gas pressure on characteristics of air plasma induced by nanosecond laser. Acta Physica Sinica, 2020, 69(5): 057401. doi: 10.7498/aps.69.20191540
  • Citation:
Metrics
  • Abstract views:  1482
  • PDF Downloads:  425
  • Cited By: 0
Publishing process
  • Received Date:  16 February 2012
  • Accepted Date:  08 March 2012
  • Published Online:  20 September 2012

Preparation and characteristic of phase transition vanadium oxide thin films by rapid thermal process

  • 1. School of Electronic Information Engineering, Tianjin University, Tianjin 300072, China
Fund Project:  Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 61101055) and the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20100032120029).

Abstract: Metal-insulator phase transition VOX thin film is fabricated on a Si 100 substrate after the metal V thin film, prepared by direct current facing targets magnetron sputtering has been rapidly thermally treated first in pure oxygen environment and then in pure nitrogen environment. The thermal treatment conditions are 430℃/40 s, 450℃/40 s, 470℃/40 s, 450℃/30 s, 450℃/50 s in pure oxygen environment and 500℃/15 s in pure nitrogen environment. XRD, XPS, AFM and SEM are imployed to analyze the crystalline structure, valentstate and the components, morphology of the thin film. The electrical and optical characteristic of the thin film are analyzed by the Four-point probe method and THz time domain spectrum technology. Results reveal that after 450℃/40 s rapid thermal treatment in pure oxygen environment the metal V thin film turns into VOX thin film which has low properties of phase transition. Before and after heating, the change of resistivity reaches 2 orders of magnitude and the range of the THz transmission intensity shows smooth change. In order to improve the properties of phase transition, the VOX thin film is treated by 500℃/15 s rapid thermal process in pure nitrogen environment. After that, we find that the thin film shows a good phase transition performance, accompanied by a sheet square resistance drop of above 3 orders of magnitude and a 56.33% reduction in THz transmission intensity.

Reference (18)

Catalog

    /

    返回文章
    返回